CH704100CT

CH704 Revised Dec 2021 CH704 AEC-Q100 Qualified, 200A Hall Current Sensor IC with 4800VRMS Reinforced Isolation This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice and Cosemitech assumes no obligation for future manufacture of this product. Contact Cosemitech for the latest status. Features • • • • • • • • • • • • • • • Package Reinforced isolation: 4800VRMS AEC-Q100 qualified (CH704A) Single supply: 4.5-5.5V Output voltage proportional to AC current: +/-50A,+/-100A,+/-150A,+/-200A Bandwidth: 120 kHz Response time: 4 us Wide temperature range: -40oC to 150oC High resolution offset and sensitivity trimming with EEPROM Primary conductor resistance: 0.1 mΩ Integrated protections o Under-voltage protection o Output voltage clamp provides short circuit diagnostic o Output spiking suppress during fast current step inputs Factory programmed sensitivity and quiescent output voltage TC Integrated digital temperature compensation circuitry Nearly zero magnetic hysteresis Ratio-metric output from supply voltage Immunity to external magnetic field 5-PIN CFF Application • • • • UPS current sensing DC-to-DC converter control Balance bike motor control Overcurrent fault detection Functional Block Diagram IP+ Low Pass filter Driver Amp Dynamic offset Cansellation Signal Remodulation VCC VOUT ` Sensitivity Polarity Sensitivity and Senstivity TC Trim Offset Trim Offset TC Trim EEPROM And control logic GND IP- Page 1/16 CH704 Revised Dec 2021 Description The device consists of a precise, low-offset, linear Hall sensor circuit with a copper conduction path located near the surface of the die. Applied current flowing through this copper conduction path generates a magnetic field which is sensed by the integrated Hall IC and converted into a proportional voltage. A precise, proportional voltage is provided by the low-offset, chopper-stabilized Hall IC, which is programmed for accuracy after packaging. The output of the device has a positive slope when an increasing current flow through the primary copper conduction path, which is the path used for current sensing. The terminals of the conductive path are electrically isolated from the sensor leads. This allows the CH704 current sensor IC to be used in high-side current sense applications without the use of highside differential amplifiers or other costly isolation techniques. The leadframe is plated with 100% matte tin, which is compatible with standard lead (Pb) free printed circuit board assembly processes. Internally, the device is Pb-free, except for flip-chip hightemperature Pb-based solder balls, currently exempt from RoHS. The device is fully calibrated prior to shipment from the factory. Revision History Change Date Revision 10 Oct 2021 1.0 First Released. 29 Dec 2021 1.1 Update the isolation parameters. Page 2/16 CH704 Revised Dec 2021 Table of Contents 1 PRODUCT FAMILY MEMBERS .......................................................................... 4 2 PIN DEFINITIONS AND DESCRIPTIONS ........................................................... 4 3 ABSOLUTE MAXIMUM RATINGS ...................................................................... 4 4 ESD PROTECTIONS ........................................................................................... 5 5 TYPICAL OVERCURRENT CAPABILITIES ........................................................ 5 6 ELECTRICAL CHARACTERISTICS1: ................................................................. 6 7 FUNCTION DESCRIPTION................................................................................ 11 8 APPLICATION INFORMATION ......................................................................... 11 9 PACKAGE INFORMATION: .............................................................................. 15 Page 3/16 CH704 Revised Dec 2021 1 Product Family Members I Part Number CH704050CT CH704100CT CH704150CT CH704200CT CH704050ACT CH704100ACT CH704150ACT CH704200ACT PR Sens(Typ) at VCC = 5 V (mV/A) (A) ±50 ±100 ±150 ±200 ±50 ±100 ±150 ±200 40 20 13.3 10 40 20 13.3 10 TA (°C) Packing -40 to 125 34 pieces per tube -40 to 150 34 pieces per tube CH704 XXX X C T Package Carrier T:Tube Prefix CH7xx: Current sensor Hall Package Type C:CFF-5 Current Sensing range Grade Blank: Industrial A: AEC-Q100 050: The maximum absolute value is 50A 100: The maximum absolute value is 100A 150: The maximum absolute value is 150A 200: The maximum absolute value is 200A 2 Pin Definitions and Descriptions Number Name 5 4 3 2 1 IP– IP+ VIOUT GND VCC Function Terminals for current being sensed; fused internally Terminals for current being sensed; fused internally Analog output signal Signal ground terminal Device power supply terminal 3 Absolute Maximum Ratings Parameter Symbol Min Max Units Supply Voltage Reverse Supply Voltage VCC VRCC -0.1 6 - V V Output Voltage VIOUT - 6 V Reverse Output Voltage VRIOUT -0.1 - V Output Source Current Iout(source) 2 mA Page 4/16 CH704 Revised Dec 2021 Output Sink Current Iout(sink) 10 mA Operating Ambient Temperature TA -40 150 °C Storage Temperature TS -65 165 °C Junction temperature TJ(max) 165 °C Note 1: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated conditions for extended periods may affect device reliability. Isolation Characteristics Characteristic Symbol Dielectric Strength Test Voltage VISO Dielectric Surge Strength Test Voltage VSURGE VSURGE Working Voltage for Basic Isolation VWVBI Working Voltage for Reinforced Isolation VWVRI Notes Agency type-tested for 60 seconds per UL standard 60950-1 (edition 2); production-tested at V_ISO for 1 second, in accordance with UL 60950-1 (edition 2). Tested ±5 pulses at 2/minute in compliance to IEC 61000-4-5 1.2 μs (rise) / 50 μs (width) Rating Unit 4800 VRMS 8000 VAC 1187 Vpk or VDC For basic (single) isolation per UL 60950-1 (edition 2) For reinforced (double) isolation per UL 60950-1 (edition 2) 840 Vrms 672 Vpk or VDC 475 Vrms Thermal Characteristics Characteristic Symbol Package Thermal Resistance (Junction to Ambient) RθJA Package Thermal Resistance (Junction to Lead) RθJL Test Conditions* Value Units 7 ºC/W 3 ºC/W Mounted on the evaluation board with 2800 mm2 (1400 mm2 on component side and 1400 mm2 on opposite side) of 4 oz. copper connected to the primary leadframe and with thermal vias connecting the copper layers. Performance is based on current flowing through the primary leadframe and includes the power consumed by the PCB. 4 ESD Protections Parameter Value Unit ±6000 V All pins 2) ±200 V All pins 3) ±750 V All pins 1) 1) HBM (human body mode, 100pF, 1.5 kΩ ) according to MIL-STD-883H Method 3015.8 2) MM (Machine Mode C=200pF, R=0Ω) according to JEDEC EIA/JESD22-A115 3) CDM (charged device mode) according to JEDEC EIA/JESD22-C101F 5 Typical Overcurrent Capabilities Characteristic Symbol Notes Value Unit TA=25 C, 1 Second duration, 1% duty cycle 1200 A 900 A 600 A o Overcurrent IPOC o TA=85 C, 1 Second duration, 1% duty cycle o TA=150 C, 1 Second duration, 1% duty cycle Page 5/16 CH704 Revised Dec 2021 6 Electrical Characteristics1: Common operating characteristics: Valid through the full range of TA , VCC = 5 V, CBYP = 0.1uF, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Unit 4.5 5 5.5 V Supply Voltage VCC Supply Current ICC VCC = 5 V, output open – 7 10 mA Supply Zener Clamp Voltage Vz TA = 25°C, ICC = 30mA 5.7 6.4 – V Power-On Time tpo Output reaches 90% of steadystate level, TA = 25°C, IP = IPR(max) applied 30 – μs – VUVLOHI TA = 25°C, VCC rising 2.8 2.9 3 V VUVLOLOW TA = 25°C, VCC falling 2.5 2.6 2.7 V Under voltage Threshold Rise Time Propagation Delay Response Time tr IP = IP(max), TA = 25°C, CL = 1 nF – 3.6 – μs tpd IP = IP(max), TA = 25°C, CL = 1 nF – 2.2 – μs tRESPONSE IP = IP(max), TA = 25°C, CL = 1 nF – 3.6 – μs Bandwidth BW Small signal –3 dB; CL = 1 nF – 120 – kHz Output Capacitance Load CL VIOUT to GND – – 10 nF Output Resistive Load RL VIOUT to GND 4.7 – – kΩ Primary Conductor Resistance RIP TA = 25°C – 0.1 – mΩ Quiescent Ouput voltage Ratiometry Hall Coupling Factor Hall Plate Sensitivity Matching VIOUT(QBI) VRAT Ip=0, TA=25oC Vcc/2 Vcc=4.5 to 5.5V % 100 G TA = 25ºC – 11 – G/A Sensmatch TA = 25ºC – ±1 – % Noise Density IND Input-referenced noise density; TA = 25°C, CL = 1 nF – 150 – µA(rms)/ √Hz Noise IN Input-referenced noise: CF = 4.7 nF, CL = 1 nF, BW = 18 kHz, TA = 25°C – 20 – mA(rms) –1.5 – +1.5 % Nonlinearity ELIN Through full range of IP Sensitivity Ratiometry Coefficient SENS_RAT_ VCC = 4.5 to 5.5 V, TA = 25ºC COEF – 1.3 – – Zero-Current Output Ratiometry Coefficient QVO_RAT_ VCC = 4.5 to 5.5 V, TA = 25ºC COEF – 1 – – VOH RL = 4.7 kΩ – VCC – 0.3 – V VOL RL = 4.7 kΩ – 0.3 – V Saturation Voltage3 Page 6/16 CH704 Revised Dec 2021 CH704050 Performance Characteristics: TA Range L, valid at TA = – 40°C to 150°C, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ.1 Max. Unit -50 – 50 A – 40 – mV/A Nominal Performance I Current-Sensing Range PR Sensitivity Sens I Noise VNOISE TA = 25°C, 10nF on VIOUT pin to GND Nonlinearity ELIN PR(min)