CMPA0527005F
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT
Description
CMPA0527005F is packaged gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). This device is matched to 50 ohms at the input and
unmatched at the output. This device operates from a 50 V rail
and is intended to be used as a predriver from 0.5 to 2.7 GHz. The
transistor is available in a 6 leaded flange package.
Package Types: 440221
PN: CMPA0527005F
Typical Performance Over 0.5 - 2.7 GHz (TC = 25˚C), 50 V, PIN = 24 dBm, CW
Parameter
0.5 GHz
1.0 GHz
1.5 GHz
2.0 GHz
2.7 GHz
Units
Small Signal Gain
20.4
20.8
21
20.5
19.5
dB
Output Power
7.8
9.3
9.1
8.7
6.6
W
Drain Efficiency
58.5
53.8
49.2
47.1
41.5
%
Note: Measured in the CMPA0527005F-AMP1 application circuit
Features
•
•
•
•
•
•
Up to 2.7 GHz Operation
8 W Typical Output Power
20 dB Small Signal Gain
Application Circuit for 0.5 - 2.7 GHz
50% Efficiency
50 V Operation
Large Signal Models Available for ADS and MWO
Rev 1.6 – September 2021
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CMPA0527005F
2
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
150
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
1.2
mA
25˚C
Maximum Drain Current
IDMAX
0.5
A
25˚C
Soldering Temperature
TS
245
˚C
Screw Torque
τ
40
in-oz
Thermal Resistance, Junction to Case
RθJC
18
˚C/W
Case Operating Temperature
TC
-40, +75
˚C
1
2
3
4
85˚C
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at wolfspeed.com/rf/document-library
3
Measured for the CMPA0527005F at PDISS = 8.4 W
4
See also, Power Derating Curve on Page 5
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 1.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 0.11 A
Saturated Drain Current2
IDS
0.78
1.12
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
100
–
–
VDC
VGS = -8 V, ID = 1.2 mA
DC Characteristics
1
RF Characteristics3,4,5 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
Small Signal Gain
S21
17
18.5
–
dB
VDD = 50 V, IDQ = 0.11 A PIN = 10 dBm
Power Gain
GP
–
13.5
–
dB
VDD = 50 V, IDQ = 0.11 A
Output Power
POUT
38.6
39.5
–
dBm
VDD = 50 V, IDQ = 0.11 A
Drain Efficiency
η
49
58.0
–
%
VDD = 50 V, IDQ = 0.11 A
Output Mismatch Stress
VSWR
–
–
10:1
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 0.11 A, POUT = 5 W CW
CDS
–
0.8
–
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Dynamic Characteristics6
Output Capacitance
Notes:
1
Measured on-wafer prior to packaging.
2
Scaled from PCM data
3
Measured in Cree’s production test fixture
4
PIN = 26 dBm
5
CW
6
Includes package
Rev 1.6 – September 2021
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CMPA0527005F
3
CMPA0527005F Typical Performance in CMPA0527005F-AMP1 Application Circuit
Figure 1. Small Signal Gain, Return Losses versus Frequency of the CMPA0527005F
VDD = 50 V, IDQ = 0.110 A
Gain and Input Return Loss vs Frequency of the CMPA0527005F
VDD = 50V, IDQ = 0.110A
25
15
Gain, Return Losses (dB)
Gain, Return Losses (dB)
20
10
S22
5
S11
0
S21
-5
-10
-15
-20
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7
Frequency (GHz)
Frequency (GHz)
Figure 2. Output Power, Power Added Efficiency and Gain vs Frequency of the
CMPA0527005F as measured in demonstration amplifier circuit CMPA0527005F-AMP1
VDD = 50 V, IDQ = 0.110 A, PIN= 24 dBm CW, Tcase = 25°C
Output Power (dBm), Efficiency (%), Gain (dB)
Output Power (dBm), Efficiency (%),
Gain (dB)
65
60
55
50
45
40
35
30
Output Power (dBm)
25
Efficiency (%)
Gain (dB)
20
15
10
5
0
0.0
0.5
1.0
1.5
Frequency (GHz)
2.0
2.5
3.0
Frequency GHz)
Rev 1.6 – September 2021
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CMPA0527005F
4
CMPA0527005F Typical Performance in CMPA0527005F-AMP1 Application Circuit
Figure 3. Gain (dB) and Efficiency (%) vs Output Power (dBm) of the CMPA0527005F
as measured in demonstration amplifier circuit CMPA0527005F-AMP1
VDD = 50 V, IDQ = 0.110 A, Tcase = 25°C
Gain (dB) and Efficiency (%) vs Pout (dBm) of the CMPA0527005F
VDD = 50V, IDQ = 0.110A, Tcase=25C
25
Gain
Drain Efficiency
1.5 GHz Gain (dB)
15
40
2.7GHz Gain (dB)
0.5 GHz Eff (%)
1.5 GHz Eff (%)
Efficiency (%)
Gain (dB)
0.5 GHz Gain (dB)
Efficiency (%)
60
20
Gain (dB)
80
2.7 GHz Eff (%)
20
10
5
15.0
20.0
25.0
30.0
Output Power (dBm)
35.0
0
45.0
40.0
Output Power (dBm)
Figure 4. Third Order Intermodulation Distortion vs Output Power
measured in demonstration amplifier circuit CMPA0527005F-AMP1
VDD = 50 V, IDQ = 0.110 A, Tcase = 25°C, Δf= 1 MHz
IMD3 (dBc) vs Pout (dBm)
VDD = 50V, IDQ = 0.110A,Tcase=25C
0
-5
-10
IMD3 (dBc)
IMD3 (dBc)
-15
-20
-25
-30
-35
0.5GHz
-40
1.5 GHz
-45
-50
20.0
2.7 GHz
22.0
24.0
26.0
28.0
30.0
32.0
Output Power (dBm)
34.0
36.0
38.0
40.0
Output Power (dBm)
Rev 1.6 – September 2021
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CMPA0527005F
5
CMPA0527005F Typical Performance
Figure 5. Simulated GMAX and K-Factor vs Frequency
VDD =Simulated
50 V, IDQ
= 0.110
A,CMPA0527005F
Tcase = 25°C
Gmax
and K of
VDD = 50V, IDQ = 0.110A
10
GMAX
Gmax (dB)
8
21
6
19
4
K- Factor
K-Factor
GMAX (dB)
GMAX (dB)
23
K- Factor
25
K-FACTOR
17
15
2
0.0
0.5
1.0
1.5
2.0
Frequency (GHz)
2.5
3.0
3.5
4.0
0
Frequency (GHz)
CMPA0527005F Power Dissipation De-rating Curve
Figure 6. Transient Power Dissipation De-Rating Curve
10
CW
Power Dissipation (W)
Power Dissipation (W)
8
6
4
2
0
0
50
100
150
Maximum Case Temperature (°C)
200
250
Maximum Case Temperature (°C)
Note: Shaded area exceeds Maximum Case Temperature (See Page 2).
Rev 1.6 – September 2021
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CMPA0527005F
6
Source and Load Impedances
D
Z Source
Z Load
G
Frequency (GHz)
Z Load
0.5
143+j115
1
63.18+j93.20
1.5
39.49+j67.24
2
40.13+j42.78
2.3
40.19+j42.82
2.7
30.48+j29.17
Note 1. VDD = 50 V, IDQ = 0.110 A in the 440221 package
Note 2. Optimized for power gain, PSAT and PAE
S
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
2 (125 V to 250 V)
JEDEC JESD22 C101-C
Rev 1.6 – September 2021
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CMPA0527005F
7
CMPA0527005F-AMP1 Application Circuit Schematic
CMPA0527005F-AMP1 Application Circuit
5
4
3
2
1
J3
C8
C7
C6
L4
C9
C1
R1
C10
Rev 1.6 – September 2021
L3
L2
L1
C2
J2
C5
L6
C3
L5
C4
CMPA0527005F-TB1
3-000915R3
J2
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CMPA0527005F
8
CMPA0527005F-AMP1 Application Circuit Bill of Materials
Designator
Description
Qty
C1
CAP, 33PF, 5%, 0603, ATC
1
C2, C6, C9
CAP, 100PF, 5%, 0603, ATC
3
C3
CAP, 3PF, 5%, 0805, ATC
1
C4
CAP, 12PF, 5%, 0603, ATC
1
C5
CAP, 0.3pF, 5%, 0603, ATC
1
C7
CAP, 470pF, 5%, 0603,100V. X7R
1
C8
CAP, 33000pF, 0805,100V,X7R
1
R1
RES, 1/16W, 1206, 1%, 0 Ohms
1
L1,L2,L5
INDUCTOR,CHIP,1.6nH,0603CS SMT
3
L3
INDUCTOR,CHIP,4.3nH,0603CS SMT
1
L4
INDUCTOR,CHIP,15nH,0603HP SMT
1
L6
INDUCTOR,CHIP,12nH,0603CS SMT
1
Q1
Transistor CMPA0527005F
1
PCB, RO4350, CMPA0527005F Applications Board, 1.7" X 2.6"X0.02”
1
BASEPLATE, AL, 2.60 X 1.7 X 0.25
1
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
J1,J2
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 20MIL
2
J3
HEADER RT>PLZ .1CEN LK 5POS
1
CMPA0527005F-AMP1 Demonstration Amplifier Circuit
Rev 1.6 – September 2021
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CMPA0527005F
9
Product Dimensions CMPA0527005F (Package Type — 440221)
Pin Number Qty
Rev 1.6 – September 2021
1
NC
2
RFIN
3
Gate Bias
4
NC
5
RFOUT + Drain Bias
6
NC
7
Source
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CMPA0527005F
10
Part Number System
CMPA0527005F
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Table 1.
Parameter
Value
Units
Upper Frequency1
2.7
GHz
Power Output
5
W
Package
Flange
-
Note1: Alpha characters used in frequency code indicate a value
greater than 9.9 GHz. See Table 2 for value.
Table 2.
Rev 1.6 – September 2021
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
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CMPA0527005F
11
Product Ordering Information
Order Number
Description
Unit of Measure
CMPA0527005F
GaN HEMT
Each
CMPA0527005F-AMP1
Test board with GaN HEMT
(flanged) installed
Each
Rev 1.6 – September 2021
Image
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CMPA0527005F
12
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/rf
Sales Contact
rfsales@cree.com
Notes & Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree
in large quantities and are provided for information purposes only. Cree products are not warranted or authorized
for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where
a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by
Cree for any infringement of patents or other rights of third parties which may result from use of the information
contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.
© 2019 – 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
Rev 1.6 – September 2021
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