C3D1P7060Q

C3D1P7060Q VRRM Silicon Carbide Schottky Diode Z-Rec Rectifier Qc = 4 nC Features Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF PowerQFN 3.3x3.3 Benefits • • • • • 600 V IF (TC=135˚C) = 3.3 A ® • • • • • • • = Small compact surface mount package Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Part Number Package Marking C3D1P7060Q QFN 3.3 C3D1P7060 Applications • • • Switch Mode Power Supplies LED Lighting Medical imaging systems Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V Continuous Forward Current 9.7 3.3 1.7 A TC=25˚C TC=135˚C TC=150˚C IFRM Repetitive Peak Forward Surge Current 7 4.5 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 15 12 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 50 40 TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 35.5 13 W TC=25˚C TC=110˚C Fig. 4 Operating Junction and Storage Temperature -55 to +160 ˚C IF TJ , Tstg 1 Parameter C3D1P7060Q Rev. F, 10-2015 Fig 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 1.7 1.7 2.4 V IF = 1.7 A TC=25°C IF = 1.7 A TC=150°C Fig. 1 IR Reverse Current 3 6 15 55 μA VR = 600 V TC=25°C VR = 600 V TC=150°C Fig. 2 QC Total Capacitive Charge 4 nC VR = 400 V, IF = 1.7A di/dt = 500 A/μs TC = 25°C Fig. 5 C Total Capacitance 82.5 7 6 pF VR = 0 V, TC = 25°C, f = 1 MHz VR = 200 V, TC = 25˚C, f = 1 MHz VR = 400 V, TC = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 0.6 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 3.8 °C/W Fig. 9 Typical Performance 100 14 6 TJ = 25 °C TJ = 75 °C TJ = 125 °C TJ = 150 °C 4 2 0 0.0 1.0 2.0 3.0 4.0 0 200 400 600 800 1000 1200 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 80 60 C3D1P7060Q Rev. F, 10-2015 5.0 6.0 TJ = 150 °C TJ = 125 °C R 8 TJ = -55 °C Reverse LeakageICurrent, (mA) IRR (uA) 10 F Foward I Current, (A) IF (A) 12 40 TJ = 75 °C TJ = 25 °C 20 TJ = -55 °C 0 0 100 200 300 400 500 600 700 800 900 1000 1100 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics Typical Performance 18 40 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 16 14 30 25 10 (W) PP Tot(W) TOT IF(peak) (A) IF (A) 12 35 8 6 20 15 10 4 5 2 0 25 40 55 70 85 0 100 115 130 145 160 25 50 75 T ˚C TCC(°C) 175 Figure 4. Power Derating 90 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 80 70 4 C (pF) (pF) Capacitance CapacitiveQCharge, (nC) QC (nC) C 150 C Conditions: TJ = 25 °C 5 125 ˚C TTC (°C) Figure 3. Current Derating 6 100 3 2 60 50 40 30 20 1 10 0 0 100 200 300 400 500 600 ReverseVVoltage, (V)VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 C3D1P7060Q Rev. F, 10-2015 700 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 100 2 FSM IIFSM (A) (A) 1.2 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 1.6 0.8 10 TJ_initial = 25 °C TJ_initial = 110 °C 0.4 0 0 100 200 300 400 500 600 1 10E-6 700 ReverseVVoltage, (V) VR (V) 1E-3 tp (s) Time, tp (s) R Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (oC/W) Thermal Resistance (˚C/W) 100E-6 0.5 1 0.3 0.1 0.05 100E-3 0.02 SinglePulse 0.01 10E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D1P7060Q Rev. F, 10-2015 100E-3 1 10E-3 Package Dimensions Package QFN 3.3 All Dimensions are in mm Tolerances are 0.05 mm if not specified NC = No Connect 5 C3D1P7060Q Rev. F, 10-2015 Recommended Landing Pattern (All Dimensions are in mm) Note: The design of the land pattern and the size of the thermal pad depend mainly on the thermal characteristic and power dissipation. In general, the size of the thermal pad should be as close to the exposed pad of the package as possible, provided that there is no bridging between the thermal pad and the lead pads. The 0.050mm extra length and width provides space to accommodate the placement tolerance of the component during pick and place process. The 0.150mm along the perimeter present areas for solder to form fillet along the side metal edges of the package. Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 6 C3D1P7060Q Rev. F, 10-2015 Diode Model Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 1.15 + (TJ * 1.1*10-3) RT = 0.13 + (TJ * 1.1*10-3) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 7 C3D1P7060Q Rev. F, 10-2015 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power