CMU5N60

CMD5N60/CMU5N60 600V N-Channel MOSFET General Description Product Summary The 5N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular BVDSS RDSON ID 600V 2.5Ω 4.5A Applications AC-DC applications. Power Supply PFC Ballast Features 4.5A, 600V, RDS (on) = 2.5 Ω TO-252/251 Pin Configuration @VGS = 10 V D 100% Avalanche Tested Improved dv/dt capability G G S Absolute Maximum Ratings Symbol VDSS ID TC = 25℃ unless otherwise noted Drain-Source Voltage - Continuous (TC = 25℃ ) Drain Current - Continuous (TC = 100℃ ) Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current - Pulsed a b a EAR Repetitive Avalanche Energy a dv/dt Peak Diode Recovery dv/dt c PD Power Dissipation (TC = 25℃ ) TO-252 (CMD5N60) Value Paramet er IDM D TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8�from case for 5 seconds S TO-251 (CMU5N60) 600 Units V 4.5 A 2.6 13.5 A ± 30 V 220 mJ 4.5 A 4.9 mJ 4.5 V/ns 54 W - 55 t o +150 ℃ 300 ℃ Value 2.56 Units ℃/ W 110 ℃/ W A Thermal Characteristics Symbol RθJC P arameter Thermal Resistance, Junction-to-Case Max. RθJA Thermal Resistance, Junction-to-Ambient Max. CA01P1 www.cmosfet.com Page 1 of 2 CMD5N60/CMU5N60 600V N-Channel MOSFET Electrical Characteristic Symbol TC = 25℃ unless otherwise noted s Parameter Test Conditions Min Typ Ma x Units 600 -- -- V -- --- Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 250 µA Gate-Body Leakage Current, Forward VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 ℃ VGS = 30 V, VDS = 0 V --- -- 10 100 Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics 1 µA nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.25A -- -- 2.5 Ω � gFS Forward Transconductance VDS = 40 V, ID = 2.25A d -- 4.7 -- S VDS = 25 V -- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 490 -- pF -- 55 -- pF -- 10 -- pF -- 15 -- ns -- 42 -- ns -- 55 -- ns -- -- ns -- 26 15 -- nC -- 2.8 -- nC -- 7 -- nC Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.5A -- -- 13.5 A -- -- 1.4 V -- 300 -- ns -- 2.2 -- µC VGS = 0 V f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time RG = 25 Ω � Qg Total Gate Charge Qgs Gate-Source Charge VDS = 480 V Qgd Gate-Drain Charge VDD = 300 V ID = 4.5A ID = 4.5A VGS = 10 V d,e d,e Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr R e v e r se R e c o v e r y C h a r g e VGS = 0 V, IS = 4.5A dI / dt = 100 A/µs d Notes: a. Repetitive Rating：Pulse width limited by maximum junction temperature b. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃ c. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ= 25℃ d. Pulse Test：Pulse width ≤ 300 µs, Duty cycle ≤ 2% e. Essentially independent of operating temperature This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2