CMD05N03A

CMD05N03A/CMU05N03A 30V N-Channel MOSFET General Description Product Summary The 05N03A uses advanced trench BVDSS RDSON ID 30V 4.5mΩ 80A technology and design to provide excellent RDS(ON). This device is Applications ideal for PWM, load switching and DC-DC Converters general purpose applications. Power switching application TO-252/251 Pin Configuration Features D Low On-Resistance G High Reliability Capability with Passivation S 100% avalanche tested TO-252 Symbol Parameter D S TO-251 Type Package Marking CMD05N03A TO-252 CMD05N03A CMU05N03A TO-251 CMU05N03A RoHS Compliant Absolute Maximum Ratings G Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Sou ce Voltage ±20 V ID@TC=25℃ Continuous Drain Current 80 A ID@TC=100℃ Continuous Drain Current 64 A IDM Pulsed Drain Current 240 A EAS Single Pulse Avalanche Energy 220 mJ PD@TC=25℃ Total Power Dissipation 50 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol CA03P2 Max. Unit R θJA Thermal Resistance Junction-ambien Parameter --- 50 ℃/ W R θJC Thermal Resistance Junction -Case --- 3.4 ℃/ W www.cmosfet.com Typ. Page 1 of 5 CMD05N03A/CMU05N03A 30V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V VGS=10V , ID=28A --- --- 4.5 mΩ VGS=4.5V , ID=20A --- --- 6.8 VGS=VDS , ID =250uA 1 --- 3 VDS= 24V , VGS=0V --- --- 1 VDS= 24V , VGS=0V , TJ=125℃ --- --- 10 V IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V, ID=15A --- 33 --- S VDS=0V , VGS=0V , f=1MHz --- 2.1 --- Ω --- 15 --- --- 7 --- Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Td(on) Tr Td(off) Tf VDS=15V , VGS =4.5V , ID=30A Gate-Drain Charge --- 3 --- Turn-On Delay Time --- 15 --- Rise Time VDS =15V , VGS =4.5V --- 21 --- Turn-Off Delay Time RG =3Ω , IDS =15A --- 22 --- Fall Time --- 6 --- Ciss Input Capacitance --- 2400 --- Coss Output Capacitance --- 765 --- Crss Reverse Transfer Capacitance --- 30 --- VDS=15V , VGS=0V , f=1MHz uA nC ns pF Diode Characteristics Symbol IS VSD Min. Typ. Max. Unit Continuous Source Current Parameter VG=VD=0V , Force Current Conditions --- --- 80 A Diode Forward Voltage VGS=0V , IS=20A , TJ=25℃ --- --- 1.2 V Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03P2 www.cmosfet.com Page 2 of 5 CMD05N03A/CMU05N03A 30V N-Channel MOSFET 100 ID-Drain Current (A) 110 10 V 4 V to 6 V 90 3.8 V T J = 25° C 3.6 V 80 70 3.2 V 60 50 40 30 2.8 V 20 10 0 2.4 V 0 1 4 3 2 V DS ≥10 V 100 ID, Drain-Source Current (A) 110 5 90 80 70 60 50 T J = 125° C 40 T J = 25° C 30 20 10 0 T J = 55° C 2 0.015 0.011 0.009 0.007 0.005 0.003 3 5 4 6 7 8 9 10 0.007 T J = 25° C 0.006 V GS = 4.5 V 0.005 0.004 0.003 20 V GS = 10 V 30 40 VGS, Gate -To-SOURCE VOLTAGE(V) 10,000 IDSS,LEAKAGE (nA) RDS(on),Drain-To-Source Resistance (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 60 70 80 90 100 110 On-Resistance vs.Drain Current and Gate Volt age V GS = 0 V ID = 30 A V GS = 10 V 2.0 50 ID, Drain Current (A) On−Resistance vs. Gate−to−Source Voltage 2.2 4 VGS, Gate -Source Volt age (V) ID = 30 A T J = 25° C 0.013 3.5 3 Typical Transfer Characteristics RDS(on),Drain-To-Source Resistance (Ω) RDS(on),Drain-To-Source Resistance (Ω) VDS Drain-Source Voltage (V) Output Characteristics 2.5 T J = 150° C 1000 T J = 125° C 100 T J = 85° C 0.8 0.6 10 50 25 0 25 50 75 100 125 150 175 10 15 20 25 30 VDS, Drain -To-Source Voltage (V) Tj - Junction Tem pera ture (°C) On-Resistance Variation with Temperature CA03P2 5 www.cmosfet.com Drain-to-Source Leakage Current vs Drain Voltage Page 3 of 5 CMD05N03A/CMU05N03A 30V N-Channel MOSFET 2800 Vgs Gate-To-Source Voltage (V) 2400 C, Capacitance (pF) T J = 25° C V GS = 0 V C iss 2000 1600 1200 C oss 800 400 0 C rss 0 5 10 15 20 25 30 12 11 10 QT 9 8 V GS 7 6 5 4 3 2 V DD = 15 V V GS = 10 V ID = 30 A T J = 25° C 1 0 0 VGS ,Drain- Source Voltage(V) 15 20 25 30 35 40 tf tr td(on) 10 V GS = 0 V 25 Is,Source Current (A) t,TIME (ns) td(off) 100 10 Qg-Total Gate Charge (nC) 30 V DD = 15 V ID = 15 A V GS = 10 V 5 Gate -To-Source and Drain-To-Source Voltage vs. Total Charge Capacitance Variation 1000 Q GD Q GS 20 15 T J = 125° C 10 5 1 1 10 100 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage vs. Current EAS,Single Pulse Drain-To-Source Avalanche Energy (mJ) ID,Drain Current (A) CA03P2 0.5 Resistive Switching Time Variation vs. Gate Resistance 10 s 0.1 0.1 0.4 VSD,Source-To-Drain Voltage(V) 100 1 T J = 25° C R G ,Gate Resistance(Ω) 1000 10 0 100 s 1 ms V GS = 10 V SINGLE PULSE T C = 25°C 10 ms dc R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 VDS ,Drain-To-Source Voltage(V) Maximum Rated Forward Biased Safe Operating Area 100 400 ID = 20 A 350 300 200 150 100 50 0 www.cmosfet.com 25 50 75 100 125 150 TJ ,Junction Temperature(℃) Maximum Avalanche Energy vs. Starting Junction Temperature 175 Page 4 of 5 CMD05N03A/CMU05N03A 30V N-Channel MOSFET 100 R(t) (C/W) 10 1.0 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 0.1 SINGLEPULSE 0.01 PSi TAB-A 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 Pulse Time(s) FET Thermal Response CA03P2 www.cmosfet.com Page 5 of 5