CMN2N10M

CMN2N10M

  • 厂商:

    CMOS(广东场效应半导体)

  • 封装:

    SOT23-3

  • 描述:

    CMN2N10M将先进的沟槽MOSFET技术与低电阻封装相结合,可实现极低的RDS(ON)。该器件非常适合用于消费类、电信、工业电源和LED背光的升压转换器和同步整流器。

  • 数据手册
  • 价格&库存
CMN2N10M 数据手册
CMN2N10M N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The CMN2N10M combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and BVDSS RDSON ID 100V 240mΩ 2A Applications DC-DC converters synchronous rectifiers for consumer,telecom, Load Switch industrial power supplies and LED System Switch backlighting. SOT-23-3L Pin Configuration D D Features ● RDS(ON)
CMN2N10M 价格&库存

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