CMS9475

CMS9475 N-Channel Enhancement Mode MOSFET General Description Product Summary The CMS9475 uses advanced trench BVDSS technology to provide excellent RDS(ON) RDSON 60V and low gate charge. This device is ID 41m 6.5A Applications suitable for use as a load switch or in Inverter Switch Synchronous Rectifier PWM applications. Load Switch DC/DC Converter Features SOP-8 Pin Configuration RDS(ON)≤41mΩ @ VGS=10V RDS(ON)≤52mΩ @ VGS=4.5V (8) D (7) (6) D (5) D D Pin 1 D Surface mount package. S High Density Cell Design For Ultra S Low On Resistance G S G S SOP- 8 Type Package Marking CMS9475 SOP- 8 CMS9475 Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V Continuous Drain Current 6.5 A Pulsed Drain Current 30 A Total Power Dissipation 3.7 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 ID IDM PD@TA =25 Thermal Data Symbol R CA01P1 JA Parameter Thermal Resistance, Junction-to-Ambient (PCB mounted) www.cmosfet.com Typ. Max. --- 62.5 Unit /W Page 1 of 2 CMS9475 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 Symbol BVDSS , unless otherwise noted) Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250μA Min. Typ. Max. Unit 60 --- --- V VGS=10V , ID=5.3A --- --- 41 VGS=4.5V , ID=4.7A --- --- 52 Gate Threshold Voltage VGS=VDS , ID =250μA 1 --- 3 V IDSS Drain-Source Leakage Current VDS=60V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS --- --- 100 nA gfs Forward Transconductance VDS=15V , ID=5.3A --- 10 --- S --- 22 --- VDS=30V , VGS=10V , ID=5.3A --- 7.1 --- RDS(ON) Static Drain-Source On-Resistance VGS(th) 20V , VDS=0V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 7.5 --- Turn-On Delay Time --- 13 --- Td(on) Tr Td(off) Tf Ciss m nC Rise Time VDD=30V , VGEN =10V , RL =6.8 --- 25 --- Turn-Off Delay Time RG =1Ω , ID=4.4A --- 40 --- --- 3.5 --- --- 930 --- --- 72 --- --- 80 --- Min. Typ. Max. Unit --- --- 1.2 V Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Conditions VGS=0V , IS=2A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2