CMP110N08B

CMP110N08B/CMB110N08B 80V N-Channel MOSFET General Description Product Summary The 110N08B uses advanced trench BVDSS RDSON ID 80V 6.5mΩ 110A technology and design to provide excellent RDS(ON) . This device is Applications LED power controller suitable for PWM, load switching and DC-DC & DC-AC converters High current, High speed switching general purpose applications. Solenoid and relay drivers Motor control, Audio amplifiers Features TO-220/263 Pin Configuration Low On-Resistance D 100% avalanche tested G G D RoHS Compliant S TO-220 (CMP110N08B) S TO-263 (CMB110N08B) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 110 A ID@TC=100℃ Continuous Drain Current 75 A 330 A 612 mJ IDM EAS Pulsed Drain Current 1 Single Pulse Avalanche Energy 2 PD@TC=25℃ Total Power Dissipation 165 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rating Unit RθJA Thermal Resistance Junction-ambient 62.5 ℃/W RθJC Thermal Resistance Junction-case 0.8 ℃/W CA01P1 www.cmosfet.com Page 1 of 2 CMP110N08B/CMB110N08B 80V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS=0V , ID=250uA 80 --- --- V RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=40A --- --- 6.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS , ID =250uA 2 --- 4 V VDS=64V, VGS=0V --- --- 1 VDS=64V, VGS=0V, TJ =55℃ --- --- 5 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10 V , ID=15A --- 30 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 --- Ω Qg Total Gate Charge I D = 50A --- 60 --- Qgs Gate-Source Charge V DS = 4 0 V --- 17 --- Qgd Gate-Drain Charge VGS = 10 V --- 12 --- Turn-On Delay Time VDS = 4 0 V RG = 3Ω --- 20 --- --- 35 --- --- 25 --- --- 15 --- --- 3900 --- --- 650 --- --- 50 --- Min. Typ. Max. Unit --- --- 110 A --- --- 330 A --- 60 --- ns Td(on) Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance I D =50A VGS =10V VDS=40V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol IS Parameter Continuous Source Current Conditions VG=VD=0V , Force Current ISM Pulsed Source Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IF =50A dI/dt=100A/μs --- 150 --- nC VSD Diode Forward Voltage VGS=0V , IS=80A --- --- 1.2 V Note : 1. Repetitive rating; pulse width limited by max. junction temperature. 2. VDD= 40V, starting TJ=25℃, L=1mH , I D =35A , VG =10V. This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01P1 www.cmosfet.com Page 2 of 2