CMS15N06T

CMS15N06T N-Channel Enhancement Mode MOSFET General Description Product Summary The CMS15N06T uses advanced BVDSS RDSON ID 60V 18mΩ 15A technology to provide excellent RDS(ON). This device is suitable for Applications use as a synchronous switch in PWM DC/DC Converter Synchronous Rectifier applications. Load Switch Battery protection SOP-8 Pin Configuration Features RDS(ON)≤18mΩ @ VGS=10V (8) (7) D (6) D (5) D D Pin 1 RDS(ON)≤23mΩ @ VGS=4.5V S Surface mount package. S RoHS Compliant Absolute Maximum Ratings (TA=25℃ S G SOP- 8 Type Package Marking CMS15N06T SOP- 8 CMS15N06T Unless Otherwise Noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V Continuous Drain Current 15 A 45 A ID IDM Pulsed Drain Current PD Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA CA03O1 Parameter Thermal Resistance, Junction-to-Ambient www.cmosfet.com Typ. --- Max. Unit 85 ℃/ W Page 1 of 2 CMS15N06T N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VGS=0V , ID=250μA 60 --- --- V VGS=10V , ID=5A --- --- 18 VGS=4.5V , ID=3A --- --- 23 BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250μA 1 --- 3 V IDSS Drain-Source Leakage Current VDS=24V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=5A --- 15 --- S VDD =48V, ID=6A VGS=4.5V --- 18.9 --- --- 7.8 --- --- 6.3 --- Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf --- 7.7 --- Rise Time VDD=30V , VGS =10V , I D =6A --- 8.7 --- Turn-Off Delay Time RG =3.3Ω --- 48 --- --- 5 --- Turn-On Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz mΩ nC ns --- 1500 --- --- 146 --- --- 98 --- Min. Typ. Max. Unit pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=6A , TJ=25℃ --- --- 15 A --- --- 45 A --- --- 1.0 V Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03O1 www.cmosfet.com Page 2 of 2