CMD65R380Q

CMD65R380Q/CMU65R380Q N-Channel Super Junction Power MOSFET General Description Product Summary The series of devices use advanced super BVDSS junction technology and design to provide RDSON 650V excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s ID 0.38 11A Applications AC-DC SMPS requirements for PFC, Power factor correction（ PFC） AC/DC power conversion, and industrial power Switched mode power supplies(SMPS) applications. Uninterruptible Power Supply（ UPS） Features TO252 / TO251 Pin Configuration 11A, 650V, R DS (on) = 0.37Ω D @VGS = 10 V Low On-Resistance G S 100% avalanche tested TO-252 Low on-resistance and low conduction losses D S TO-251 Type Package Marking CMD65R380Q TO-252 CMD65R380Q CMU65R380Q TO-251 CMU65R380Q ROHS compliant Absolute Maximum Ratings G Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Sou ce Voltage 30 V ID@TC=25 Continuous Drain Current 11 A ID@TC=100 Continuous Drain Current 9 A IDM Pulsed Drain Current 33 A EAS Single Pulse Avalanche Energy 215 mJ W Total Power Dissipation 85 TSTG Storage Temperature Range -55 to 175 TJ Operating Junction Temperature Range -55 to 175 PD@TC=25 Thermal Data Symbol CA03N1 Parameter Typ. Max. Unit R JA Thermal Resistance Junction-ambient --- 62 /W R JC Thermal Resistance Junction -Case --- 1.5 /W www.cmosfet.com Page 1 of 2 CMD65R380Q/CMU65R380Q N-Channel Super Junction Power MOSFET Electrical Characteristics (TJ=25 Symbol BVDSS RDS(ON) , unless otherwise noted) Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS=0V , ID=250uA 650 --- --- V Static Drain-Source On-Resistance VGS=10V , ID=20A --- --- 0.38 Ω 2 --- 4 V Gate Threshold Voltage VDS= VGS, ID = 250μA IDSS Drain-Source Leakage Current VDS=650V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS --- --- 100 nA gfs Forward Transconductance VDS=30V, ID=4A --- 8 --- S VDS=0V , VGS=0V , f=1MHz --- 23 --- --- 21 --- --- 8 --- --- 6 --- VGS(th) Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf 30V , VDS=0V VDS=520V , VGS=10V , ID=10.6A Turn-On Delay Time nC --- 20 --- Rise Time VDS =325V , RG =25Ω --- 39 --- Turn-Off Delay Time ID =10.6A --- 109 --- Fall Time VGS = 10V --- 37 --- --- 780 --- VDS=50V , VGS=0V , f=1MHz --- 896 --- --- 38.7 --- Min. Typ. Max. Unit --- --- 11 A --- --- 33 A --- --- 1.2 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03N1 www.cmosfet.com Page 2 of 2