CMN2308M

CMN2308M N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The CMN2308M uses advanced BVDSS RDSON ID 60V 65mΩ 6.5A trench technology to provide excellent RDS(ON). This device Applications is suitable for use as a Battery DC-DC converters protection or in other switching Load Switch System Switch application. SOT-23-3L Pin Configuration D D Features ● G RDS(ON)