CMN3401M

CMN3401M P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The CMN3401M uses advanced trench BVDSS technology to provide excellent RDS(ON), RDSON -30V low gate charge and operation with gate ID 60m -4A Applications voltages as low as 2.5V. This device is suitable for use as a Battery protection PWM applications or in other Switching application. Load switch Power management Features PA Switch RDS(ON)