CMSA30N06T

CMSA30N06T Dual N-Channel Enhancement Mode MOSFET General Description Product Summary The CMSA30N06T uses advanced BVDSS RDSON ID 60V 19mΩ 30A trench technology to provide Applications excellent RDS (ON), This device is Switching applications suitable for use in high performance Motor Drive automotive applications. Automotive DFN-8 5x6 Pin Configuration Features D1 Dual N-Channel MOSFET D1 D2 D2 D2 S1 Pin 1 RoHS Compliant D1 G1 S2 D2 D1 D2 100% avalanche tested Small Footprint (5x6mm) for Compact Design D1 G2 G2 S2 G1 S1 G2 G1 S2 S1 DFN-8 5x6 Type CMSA30N06T Package Marking DFN-8 5*6 CMSA30N06T Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V Gate-Source Voltage ±20 V Continuous Drain Current 30 A VGS ID @TC =25℃ IDM Pulsed Drain Current 120 A PD@TC=25℃ Total Power Dissipation 50 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA03N2 Parameter RθJA Thermal Resistance, Junction-to-Ambient(Steady State) RθJC Thermal Resistance Junction -Case(Steady State) www.cmosfet.com Typ. Max. Unit --- 35 ℃/ W --- 5.5 ℃/ W Page 1 of 3 CMSA30N06T Dual N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VGS=10V , ID=15A --- --- 19 VGS=4.5V , ID=10A --- --- 23 BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250μA 1 --- 3 V IDSS Drain-Source Leakage Current VDS=60V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS= ±20V, VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 18 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3 --- Ω Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf Ciss VDD=30V , ID=11A VGS=4.5 V Turn-On Delay Time --- 7 --- --- 5 --- --- 1.5 --- --- 10 --- mΩ nC Rise Time VDD=30V , VGEN =10V , RG=1Ω --- 26 --- Turn-Off Delay Time RL =3.45Ω , ID=8.7A --- 21 --- --- 11 --- --- 3100 --- --- 435 --- --- 20 --- Min. Typ. Max. Unit A Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS IS,pulse VSD Parameter Diode continuous forward current Diode pulse current Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=10A , Tj=25℃ --- --- 30 --- --- 120 A --- --- 1.2 V This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03N2 www.cmosfet.com Page 2 of 3 CMSA30N06T Dual N-Channel Enhancement Mode MOSFET Package Dimensions DFN-8 5x6 CA03N2 www.cmosfet.com Page 3 of 3