CMD63P04L

CMD63P04L/CMU63P04L 40V P-Channel MOSFET General Description Product Summary The 63P04L uses advanced technology BVDSS RDSON ID -40V 11mΩ -63A and design to provide excellent RDS(ON) . This device is ideal for boost converters Applications and synchronous rectifiers for consumer, telecom, industrial power supplies and Inverters LED backlighting. Power Supplies TO-252/251 Pin Configuration Features D D Max rDS(on) =11mΩ at VGS = 10V ● ▲ G Fast Switching S RoHS Compliant TO-252 Absolute Maximum Ratings G G D S ● ● TO-251 S Type Package Marking CMD63P04L TO-252 CMD63P04L CMU63P04L TO-251 CMU63P04L Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V -63 A -50 A -190 A 225 mJ W ID@TC=25℃ ID@TC=100℃ IDM E AS Continuous Drain Current Pulsed Drain Current Drain-Source Avalanche Energy 1 PD@TC=25℃ Total Power Dissipation 75 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA03Q1 Parameter Typ. RθJA Thermal Resistance Junction-ambient --- RθJC Thermal Resistance Junction-case --- www.cmosfet.com Max. Unit 50 1.7 ℃/W ℃/W Page 1 of 2 CMD63P04L /CMU63P04L 40V P-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Conditions 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V VGS=-10V , ID=-20A --- --- 11 mΩ VGS=-4.5V , ID=-15A --- --- 17 Gate Threshold Voltage VGS=VDS , ID =-250 uA -1 --- -3 V IDSS Drain-Source Leakage Current VDS=-32V , VGS=0V --- --- -1 uA IGSS Gate-Source Leakage Current VGS =±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance 2 VDS=-10 V, ID=-20A --- 26 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4.3 --- Ω --- Qg Total Gate Charge I D =-20A --- 61 Qgs Gate-Source Charge V DS =- 20V --- 21 --- Qgd Gate-Drain Charge VGS =-4.5V --- 28 --- Turn-On Delay Time V DD =-20V , I D =-10A R L =2Ω --- 14 --- --- 11 --- --- 71 --- --- 17 --- --- 3600 --- --- 250 --- --- 210 --- Min. Typ. Max. Unit A Td(on) Tr Td(off) Tf Ciss Rise Time R G =1Ω VGSE =-10V Turn-Off Delay Time Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=-20A --- --- -63 --- --- -190 A --- --- -1.2 V Notes: 1.Starting TJ = 25℃, L=0.5mH, I AS =-30A, V DD = -30 V, VGS = -10 V . 2.Pulse T est: Pulse Width < 300μs, Duty cycle < 2.0%. This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03Q1 www.cmosfet.com Page 2 of 2