CMB044N10

CMP044N10/CMB044N10 100V N-Channel MOSFET General Description Product Summary The 044N10 is N-Channel MOSFET, BVDSS RDSON ID 100V 4.5mΩ 100A It has specifically been designed to minimize input capacitance and gate Applications charge. The device is therefore suitable in advanced high-efficiency switching Motor Control applications. DC-DC converters Switching applications TO-220/263 Pin Configuration Features D Minimize input capacitance and gate charge 100% avalanche tested G D Low On-Resistance G S TO-220 Absolute Maximum Ratings Symbol Parameter S TO-263 Type Package Marking CMP044N10 TO-220 CMP044N10 CMB044N10 TO-263 CMB044N10 Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 100 A ID@TC=100℃ Continuous Drain Current 80 A IDM Pulsed Drain Current 400 A EAS Single Pulse Avalanche Energy 1330 mJ PD@TC=25℃ Total Power Dissipation 150 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA03O1 Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient --- 62.5 ℃/ W RθJC Thermal Resistance Junction-case --- 1.0 ℃/ W www.cmosfet.com Page 1 of 2 CMP044N10/CMB044N10 100V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V Static Drain-Source On-Resistance VGS=10V , ID=20A --- --- 4.5 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V IDSS Drain-Source Leakage Current VDS= 100V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=20A --- 32 --- S Ω Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 4.2 --- Qg Total Gate Charge I D = 100A --- 49 --- Qgs Gate-Source Charge V DD = 50V --- 20 --- Gate-Drain Charge VGS = 10 V --- 10 --- V DD = 50 V I D = 100A --- 30 --- --- 50 --- --- 42 --- Qgd Td(on) Tr Td(off) Tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance R G =6Ω VGS =10V VDS=50V , VGS=0V , f=1MHz nC ns --- 14 --- --- 6700 --- --- 2300 --- --- 19 --- Min. Typ. Max. Unit --- --- 100 A --- --- 400 A --- --- 1.2 V pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=50A , TJ=25℃ Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability withtout notice. CA03O1 www.cmosfet.com Page 2 of 2