CMD5931

CMD5931/CMU5931 P-Channel Silicon MOSFET General Description Product Summary These P-Channel enhancement mode power BVDSS field effect transistors use advanced trench RDSON -100V technology and design to provide excellent ID 175mΩ -18A Applications RDS(ON) . This device is suitable for use as DC-DC Converters a load switch or in PWM applications. LCD Display inverter Power Management in Note book Features TO-252 / 251 Pin Configuration Fast switching speed D D Lower On-resistance G 100% EAS Guaranteed G S TO-252 Simple Drive Requirement G D S S TO-251 Type Package Marking CMD5931 TO-252 CMD5931 CMU5931 TO-251 CMU5931 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Sou ce Voltage ±20 V ID@TC=25℃ Continuous Drain Current -18 A IDM Pulsed Drain Current -54 A EAS Single Pulse Avalanche Energy 17 mJ PD@TC=25℃ Total Power Dissipation 40 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol CA03J1 Parameter Typ. Max. Unit RθJA Junction-to-Ambient --- 62 ℃/W RθJC Junction-to-Case (Drain) --- 3.5 ℃/W www.cmosfet.com Page 1 of 2 CMD5931/CMU5931 P-Channel Silicon MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Unit V -100 --- --- VGS=-10V, ID=-6A --- --- 175 VGS=-4.5V, ID=-3A --- --- 185 VGS=VDS , ID =-250uA -1 --- -3 mΩ V --- -1 --- --- -100 Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA Forward Transconductance VDS=-5V, ID=-6A --- 14 --- S VDS=-80V , ID=-8A VGS=4.5V --- 17 --- --- 5 --- --- 9 --- gfs Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Tf Max. --- IGSS Td(off) Typ. VDS=-24V, VGS=0V , TJ=25℃ Drain-Source Leakage Current Tr VGS=0V , ID=-250uA Min. VDS=-24V, VGS=0V , TJ=125℃ IDSS Td(on) Conditions Turn-On Delay Time --- 10 --- Rise Time VDS =-50V, VGS=-10V, RG=3.3Ω --- 15 --- Turn-Off Delay Time ID=-8A --- 46 --- --- 42 --- Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-25V, VGS=0V , f=1MHz uA nC ns --- 1450 --- --- 110 --- --- 70 --- Min. Typ. Max. Unit pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=-12A --- --- -18 A --- --- -54 A --- --- -1.2 V Note : This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03J1 www.cmosfet.com Page 2 of 2