CMD12N15

CMD12N15/CMU12N15 150V N-Channel MOSFET General Description Product Summary The MOSFETs utilize advanced processing techniques to achieve extremely low BVDSS RDSON ID 150V 0.26Ω 12A on-resistance per silicon area. This benefit, combined with the fast switching speed and Applications ruggedized device design, provides the designer PWM Motor Controls with anextremely efficient and reliable device LED TV for use in a wide variety of applications. DC-DC Converters Features TO-252/251 Pin Configuration Advanced Process Technology D 175℃ Operating Temperature Fast Switching G Fully Avalanche Rated S Simple Drive Requirements TO-252 (CMD12N15) Absolute Maximum Ratings G D S TO-251 (CMU12N15) Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 12 A ID@TC=100 Continuous Drain Current 9.5 A IDM Pulsed Drain Current 36 A EAS Single Pulse Avalanche Energy 80 mJ IAS Avalanche Current 7 A Total Power Dissipation 50 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25 Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient --- 50 ℃/ W RθJC Thermal Resistance Junction -Case --- 2.78 ℃/ W CA03O2 www.cmosfet.com Typ. Max. Unit Page 1 of 2 CMD12N15/CMU12N15 150V N-Channel MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit V VGS=0V , ID=250uA 150 --- --- VGS=10V, ID=3.5A --- --- 260 VGS=4.5V , ID= 1A --- --- 270 VGS=VDS , ID =250uA 1 --- 2.5 =0V, Tj = 25 ℃ --- --- 1 VDS=120V , VGS=0V , Tj = 150℃ --- --- 10 VDS=130V , VGS mΩ V uA IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=3A --- 7.3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 --- Ω Qg Total Gate Charge --- 10 --- Qgs Gate-Source Charge --- 2.5 --- Qgd Gate-Drain Charge --- 6 --- --- 6 --- --- 60 --- Turn-Off Delay Time --- 22 --- Fall Time --- 40 --- Ciss Input Capacitance --- 780 --- Coss Output Capacitance --- 24 --- Crss Reverse Transfer Capacitance --- 17 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf VDS=120V, VGS=10V ID=9A Turn-On Delay Time VDD=75V , I D = 9A , RG =25Ω Rise Time VDS=25V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS = 0V , IS = 6A , TJ = 25℃ --- --- 12 A --- --- 36 A --- --- 1.2 V This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03O2 www.cmosfet.com Page 2 of 2