CMD85P03A/CMU85P03A
P-Channel 30-V (D-S) MOSFET
General Description
Product Summary
These P-Channel enhancement mode power
BVDSS
RDSON
ID
-30V
8.5mΩ
-85A
field effect transistors use advanced trench
technology and design to provide excellent
Applications
RDS(ON) . This device is suitable for use as
DC-DC Converters
a load switch or in PWM applications.
Load Switches
BLDC Motor driver
Features
TO-252 / 251 Pin Configuration
Fast switching speed
D
D
Lower On-resistance
G
100% EAS Guaranteed
G
S
Simple Drive Requirement
TO-252
Absolute Maximum Ratings
D
S
G
TO-251
S
Type
Package
Marking
CMD85P03A
TO-252
CMD85P03A
CMU85P03A
TO-251
CMU85P03A
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Sou ce Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
-85
A
IDM
Pulsed Drain Current
-255
A
EAS
Single Pulse Avalanche Energy
196
mJ
Total Power Dissipation
90
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
PD@TC=25
Thermal Data
Symbol
CA03Q1
Parameter
Typ.
Max.
Unit
RθJA
Junction-to-Ambient
---
50
℃/W
RθJC
Junction-to-Case (Drain)
---
1.6
℃/W
www.cmosfet.com
Page 1 of 2
CMD85P03A/CMU85P03A
P-Channel 30-V (D-S) MOSFET
Electrical Characteristics (TJ=25℃ , unless otherwise noted)
Symbol
BVDSS
Parameter
Drain-Source Breakdown Voltage
Conditions
Min.
Typ.
Max.
Unit
V
VGS=0V , ID=-250uA
-30
---
---
VGS=-10V , ID=-20A
---
---
8.5
VGS=-4.5V, ID=-15A
---
---
11.5
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
IDSS
Drain-Source Leakage Current
IGSS
mΩ
-1.0
---
-2.5
V
VDS=-24V, VGS=0V , TJ=25℃
---
---
-1
uA
Gate-Source Leakage Current
VGS = ±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5 V , ID=-10A
---
30
---
S
VDS=0V , VGS=0V , f=1MHz
---
4.0
---
Ω
---
52
---
---
13
---
---
17
---
Rg
Gate Resistance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Td(on)
Tr
Td(off)
Tf
VDS=-15V , ID=-20A
VGS=-10V
Turn-On Delay Time
---
17
---
Rise Time
VDS =-15V, VGS=-10V , RGS=3Ω
---
13
---
Turn-Off Delay Time
ID=-20A
---
46
---
---
23
---
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=-10V, VGS=0V , f=1MHz
nC
ns
---
4000
---
---
585
---
---
470
---
Min.
Typ.
Max.
Unit
pF
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
Conditions
VG=VD=0V , Force Current
VGS=0V , IF =-20A
---
---
-85
A
---
---
-255
A
---
---
-1.2
V
This product has been designed and qualified for the counsumer market.
Cmos assumes no liability for customers' product design or applications.
Cmos reserver the right to improve product design ,functions and reliability wihtout notice.
CA03Q1
www.cmosfet.com
Page 2 of 2
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