CHT-PLA8294A-HM8A-T

CHT-PLUTO-B1220 Datasheet High Temperature 1200V/20A Dual SiC MOSFET Module Version: 1.2 14-Dec-23 (Last Modification Date) General description Features (per switch) CHT-PLUTO-B1220 is a high tempera- • Specified from -55 to +210°C (Tj) ture 1200V/20A Dual Silicon Carbide MOSFET in a single hermetic module. It • VDS Max: 1200V • Max Continuous Current: is suitable to implement a power half bridge for applications such as DC-DC o 20A @ Tc≤160°C o 17A @ Tc=175°C converters or motor drives in high temperature environments. The two inde- • Max Pulsed Current: 25A pendent switches can be used in parallel • Typical On-resistance: to deliver a total of 40A. This product is guaranteed for normal operation on the o RDSon= 40 mΩ @ Tj=25°C o RDSon= 120 mΩ @ Tj=210°C full range -55°C to +210°C (Tj). Each MOSFET has a breakdown voltage in • High Speed Switching • Voltage control: VGS=-5V/20V excess of 1200V and is capable of switching current up to 20A. They have a • Low gate charge: QGS: 22nC on-resistance of 90mΩ at 25°C and • Hermetic package with isolated case 200mΩ at 210°C at VGS=20V. Each MOSFET has an intrinsic body diode. Functional Block Diagram Benefits • High power density converters (support of high-frequency switching and reduced cooling) • Extended lifetime and high reliability D2P G2S S2S • Harsh environments and high temperature power converters • Seamless driving with HADES® gate driver solutions S2P D1P G1S S1S S1P Applications • DC motor drives and actuator control Note: the schematic shows the intrinsic body diode • DC-DC converters PUBLIC Doc. SP-151809 V1.2 WWW.CISSOID.COM 1 of 8 Dual 20A 1200V SiC MOSFET Module Datasheet 14-Dec-23 (Last Modification Date) Package configuration and Pin Description 8 D2P 7 S2P G2S 1 S2S 2 6 D1P G1S 3 5 S1P S1S 4 Pin ID 1 2 3 4 5 6 7 8 Pin Name G2S S2S G1S S1S S1P D1P S2P D2P Body PUBLIC Doc. SP-151809 V1.2 Pin Description Gate of MOSFET 2 (Signal Pin) Source of MOSFET 2 (Signal Pin) Gate of MOSFET 1 (Signal Pin) Source of MOSFET 1 (Signal Pin) Source of MOSFET 1 (Power Pin) Drain of MOSFET 1 (Power Pin) Source of MOSFET 2 (Power Pin) Drain of MOSFET 2 (Power Pin) Package body (isolated from Pins) WWW.CISSOID.COM Pin Finish Nickel Nickel Nickel Nickel Nickel Gold Nickel Gold Nickel 2 of 8 Dual 20A 1200V SiC MOSFET Module Datasheet 14-Dec-23 (Last Modification Date) Absolute Maximum Ratings Operating Conditions (per switch) Gate-to-Source voltage VGS -5V to 22V Drain-to-Source voltage VDS 1200V Max DC Drain current IDS 20A Max Junction temperature Tjmax 210°C Power dissipation at Tc=175°C (*) 45W Gate-to-Source voltage VGS -5V to 20V Drain-to-Source voltage VDS 1200V Max DC drain current IDS (Tc=175°C) 17A Max DC drain current IDS (Tc≤160°C) 20A Max pulsed drain current 25A Junction temperature -55°C to +210°C ESD Rating Human Body Model >1kV (*): per switch position and including switching losses PUBLIC Doc. SP-151809 V1.2 WWW.CISSOID.COM 3 of 8 Dual 20A 1200V SiC MOSFET Module Datasheet 14-Dec-23 (Last Modification Date) Electrical characteristics (per switch) Unless otherwise stated, Tj =25°C. Bold figures point out values valid over the whole temperature range (T j =-55°C to +210°C). Parameter Symbol Threshold voltage VTH Drain cut-off current IDSS Gate leakage current IGSS Static drain-to-source resistance RDSon Breakdown drain-to-source voltage (DC characterization) Input capacitance Output capacitance (includes diode capacitance) Feedback capacitance Turn-on delay time Fall time Turn-off delay time Rise time Turn-On Switching Loss Turn-Off Switching Loss VBRDS CISS Condition Tj=25°C ; ID = 1mA; VDS = 20V Tj=210°C ; ID = 1mA; VDS = 20V VGS =0V, VDS=1200V, Tj=25°C VGS =0V, VDS =1200V, Tj=210°C VGS =20V, VDS =1200V, Tj=25°C VGS =20V, VDS =1200V,Tj=210°C VGS =20V, ID=20A, Tj=25°C VGS =20V, ID=20A, Tj=210°C Min VGS =0V; ID = 1 mA 1200 VGS =0VDC, VDS =600V f = 1 MHz VAC = 25mV COSS CRSS Td(ON) Tr Td(OFF) Tf Eon Eoff VDD=600V; VGS= -4/20V ID = 20A RG= 6.8Ω; L = 856µH Internal gate resistance RG VGS =0VDC; f = 1 MHz; VAC = 25mV Gate to Source Charge Gate to Drain Charge Total Gate Charge QGS QGD QG Tj=25°C ;VDD= 800V; ID = 20A; VGS = -4/20V Diode forward voltage VF Reverse recovery time Trr Peak reverse recovery current Iprr Tj=25°C; IF=20A; VGS=-5V Tj=210°C; IF=20A; VGS=-5V Tj=25°C; VDS=300V; VGS = -5V; IF=20A;dIF/dt = 100A/µS Typ 4.45 3.28 20 10 5 20 40 120 Max Unit V V nA µA nA nA mΩ mΩ V 1337 pF 76 pF 27 21 39 49 24 240 140 pF ns ns ns ns µJ µJ 7 Ω 22 41 107 3.6 3.2 220 nC nC nC V V ns 2.3 A Thermal Characteristics Parameter Junction-to-Case Thermal resistance MOSFET PUBLIC Doc. SP-151809 V1.2 Symbol Condition RΘJC Min Typ 1.1 WWW.CISSOID.COM Max Unit °C/W 4 of 8 Dual 20A 1200V SiC MOSFET Module Datasheet 14-Dec-23 (Last Modification Date) Typical performances (per switch) 20 20 18 18 16 16 14 14 12 Id [A] Id [A] 12 10 8 8 Vgs=8V Vgs=10V 6 10 Vgs=8V Vgs=10V 6 Vgs=12V Vgs=12V Vgs=14V 4 Vgs=14V 4 Vgs=16V Vgs=16V 2 2 Vgs=18V 0 1 2 3 4 5 6 7 8 9 Vgs=18V Vgs=20V Vgs=20V 0 0 0 10 1 2 3 4 6 7 8 9 10 Vds [V] Vds [V] Figure 1: Drain current vs VDS (Tj= 25°C) Figure 2: Drain current vs VDS (Tj= 125°C) 20 20 18 18 16 16 14 14 12 12 Id [A] Id [A] 5 10 8 8 Vgs=8V Vgs=10V 6 10 Vgs=8V Vgs=10V 6 Vgs=12V Vgs=12V Vgs=14V 4 Vgs=14V 4 Vgs=16V 2 Vgs=16V 2 Vgs=18V Vgs=18V Vgs=20V Vgs=20V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 Vds [V] 1 2 3 4 5 6 7 8 9 10 Vds [V] Figure 3: Drain current vs VDS (Tj= 175°C) Figure 4: Drain current vs VDS (Tj= 210°C) 50 45 40 35 Id [A] 30 25 20 -55°C 15 25°C 10 125°C 175°C 5 210°C 0 0 2 4 6 8 10 12 14 16 Vgs [V] Figure 5: Drain current vs VGS voltage PUBLIC Doc. SP-151809 V1.2 WWW.CISSOID.COM 5 of 8 Dual 20A 1200V SiC MOSFET Module Datasheet 14-Dec-23 (Last Modification Date) 0.14 0.14 0.12 0.12 0.1 0.1 Rdson [Ohm] Rds [ohm] Typical performances (cnt’d) 0.08 0.06 25°C 0.02 125°C 0.02 175°C 0 210°C -100 0 0 5 10 15 20 25 0.06 0.04 -55°C 0.04 0.08 30 -50 0 50 100 150 200 250 Temperature [°C] Id [A] Figure 7: On-state drain source resistance vs. Temperature (VGS =20V; IDS=10A) Figure 6: On-state drain source resistance vs. Drain current (VGS =20V) 30 -55°C 25°C 125°C 25 175°C 20 IF [A] 210°C 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VF[V] Figure 8: Diode IDS vs VDS (3rd quadrant;VGS=-5V) PUBLIC Doc. SP-151809 V1.2 WWW.CISSOID.COM 6 of 8 Dual 20A 1200V SiC MOSFET Module Datasheet 14-Dec-23 (Last Modification Date) Package Dimensions 31.0 6.55 9.44 17.87 CISSOID CHT-PLAxxxxx lot/code 29.09 4.5 Origin (0,0) 29.67 6.05 10.55 17.91 22.41 23.09 15.93 11.43 6.93 2.43 1.52 7.36 CISSOID CHT-PLAxxxxx lot/code 1.52 4.5 Ø3.5 -3.66 23.67 27.33 HM8A dimensions in mm (+/- 10%) Ordering Information Product Name CHT-PLUTO-B1220 Ordering Reference CHT-PLA8294A-HM8A-T Package HM8A Marking CHT-PLA8294A Related products Product Name Function Ordering Reference CHT-PLUTO-B1230 CHT-PLUTO-C1230 CHT-PLUTO-C1220 Dual 1200V/30A SiC MOSFET Module 1200V/30A SiC Async Buck or Boost Power Module 1200V/20A SiC Async Buck or Boost Power Module CHT-PLA2316A-HM8A-T CHT-PLA2228A-HM8A-T CHT-PLA3777A-HM8A-T PUBLIC Doc. SP-151809 V1.2 WWW.CISSOID.COM 7 of 8 Dual 20A 1200V SiC MOSFET Module Datasheet 14-Dec-23 (Last Modification Date) Contact & Ordering CISSOID S.A. Headquarters and contact EMEA: CISSOID S.A. – Rue Francqui, 11 – 1435 Mont Saint Guibert - Belgium T : +32 10 48 92 10 - F: +32 10 88 98 75 Email: sales@cissoid.com Sales Representatives: Visit our website: http://www.cissoid.com Disclaimer Neither CISSOID, nor any of its directors, employees or affiliates make any representations or extend any warranties of any kind, either express or implied, including but not limited to warranties of merchantability, fitness for a particular purpose, and the absence of latent or other defects, whether or not discoverable. In no event shall CISSOID, its directors, employees and affiliates be liable for direct, indirect, special, incidental or consequential damages of any kind arising out of the use of its circuits and their documentation, even if they have been advised of the possibility of such a damage. The circuits are provided “as is”. CISSOID has no obligation to provide maintenance, support, updates, or modifications. a damage. The circuits are provided “as is”. CISSOID has no obligation to provide maintenance, support, updates, or modifications. PUBLIC Doc. SP-151809 V1.2 WWW.CISSOID.COM 8 of 8