DG10X12T2

DG10X12T2 IGBT Discrete DOSEMI IGBT DG10X12T2 1200V/10A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features         Low VCE(sat) Trench IGBT technology 10μs short circuit capability Low switching loss Maximum junction temperature 175oC Low inductance case VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2021 STARPOWER Semiconductor Ltd. 11/5/2021 1/9 B01 DG10X12T2 IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp limited by Tjmax Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 20 10 30 96 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current @ TC=100oC Diode Maximum Forward Current tp limited by Tjmax Value 1200 10 30 Unit V A A Values -40 to +175 -55 to +150 260 0.6 Unit o C o C o C N.m A A W Diode Symbol VRRM IF IFM Discrete Symbol Tjop TSTG TS M Description Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s Mounting Torque, Screw M3 ©2021 STARPOWER Semiconductor Ltd. 11/5/2021 2/9 B01 DG10X12T2 IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=10A,VGE=15V, Tj=25oC IC=10A,VGE=15V, Tj=150oC IC=10A,VGE=15V, Tj=175oC IC=0.40mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.70 2.15 2.00 Unit V 2.05 5.6 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=10A, RG=20Ω,VGE=±15V, LS=40nH,Tj=25oC VCC=600V,IC=10A, RG=20Ω,VGE=±15V, LS=40nH,Tj=150oC VCC=600V,IC=15A, RG=20Ω,VGE=±15V, LS=40nH,Tj=175oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2021 STARPOWER Semiconductor Ltd. Typ. 11/5/2021 6.2 6.8 V 250 uA 400 nA 0 1.04 Ω nF 0.03 nF 0.08 10 22 55 311 μC ns ns ns ns 0.97 mJ 0.59 mJ 11 24 60 421 ns ns ns ns 1.16 mJ 0.78 mJ 12 25 62 431 ns ns ns ns 1.23 mJ 0.81 mJ 40 A 3/9 B01 DG10X12T2 IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF trr Qr IRM Erec trr Qr IRM Erec trr Qr IRM Erec Parameter Diode Forward Voltage Diode Reverse Recovery Time Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Diode Reverse Recovery Time Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Diode Reverse Recovery Time Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=10A,VGE=0V,Tj=25oC IF=10A,VGE=0V,Tj=150oC IF=10A,VGE=0V,Tj=175oC Min. Typ. 1.85 1.95 2.00 VR=600V,IF=10A, -di/dt=500A/μs,VGE=-15V LS=40nH,Tj=25oC VR=600V,IF=10A, -di/dt=550A/μs,VGE=-15V LS=40nH,Tj=150oC VR=600V,IF=10A, -di/dt=550A/μs,VGE=-15V LS=40nH,Tj=175oC Max. 2.30 Unit V 172 ns 0.5 μC 6.56 A 0.34 mJ 246 ns 0.9 μC 7.58 A 0.54 mJ 258 ns 1.0 μC 8.31 A 0.70 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RthJC RthJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2021 STARPOWER Semiconductor Ltd. Min. Typ. Max. 1.560 2.300 40 11/5/2021 Unit K/W K/W 4/9 B01 DG10X12T2 IGBT Discrete 20 20 VGE=15V VCE=20V 16 15 IC [A] IC [A] 12 10 8 5 4 Tj=25℃ Tj=150℃ Tj=175℃ Tj=25℃ Tj=150℃ Tj=175℃ 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 Fig 1. IGBT-inverter Output Characteristics 5 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT-inverter Transfer Characteristics 4 4 Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ 3.5 3 3 VCC=600V IC=10A VGE=±15V 2.5 E [mJ] 2 Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ 3.5 VCC=600V RG=20Ω VGE=±15V 2.5 E [mJ] 6 2 1.5 1.5 1 1 0.5 0.5 0 0 0 5 10 IC [A] 15 20 Fig 3. IGBT-inverter Switching Loss vs. IC ©2021 STARPOWER Semiconductor Ltd. 0 40 80 120 RG [Ω] 160 200 Fig 4. IGBT-inverter Switching Loss vs. RG 11/5/2021 5/9 B01 IGBT Discrete 40 10 30 1 ZthJC [K/W] IC [A] DG10X12T2 20 single pulse D=0.01 0.1 D=0.02 D=0.05 D=0.1 10 D=0.5 i: 1 2 3 4 ri[K/W]: 0.1716 0.5276 0.5403 0.3205 τi[s]: 0.1730 0.0275 0.0026 0.0003 0 0 D=0.2 0.01 RG=20Ω VGE=±15V Tj=150oC 0.001 0.000001 200 400 600 800 1000 1200 1400 VCE [V] Fig 5. IGBT-inverter RBSOA 0.0001 0.01 1 t [s] Fig 6. IGBT-inverter Transient Thermal Impedance 20 1.2 Tj=25℃ Tj=150℃ Tj=175℃ Erec Tj=150℃ Erec Tj=175℃ 1 16 0.8 IF [A] E [mJ] 12 0.6 8 0.4 4 VCC=600V RG=20Ω VGE=-15V 0.2 0 0 0 0.5 1 1.5 2 VF [V] 2.5 3 Fig 7. Diode-inverter Forward Characteristics ©2021 STARPOWER Semiconductor Ltd. 0 4 8 12 IF [A] 16 20 Fig 8. Diode-inverter Switching Loss vs. IF 11/5/2021 6/9 B01 DG10X12T2 IGBT Discrete 1 10 Erec Tj=150℃ Erec Tj=175℃ 0.8 1 E [mJ] ZthJC [K/W] 0.6 0.4 single pulse D=0.01 0.1 D=0.02 D=0.05 D=0.1 D=0.2 0.01 0.2 VCC=600V IF=10A VGE=-15V D=0.5 i: 1 2 3 4 ri[K/W]: 0.5538 0.7338 0.6677 0.3446 τi[s]: 0.0730 0.0081 0.0011 0.0002 0 0 40 80 120 RG [Ω] 160 200 Fig 9. Diode-inverter Switching Loss vs. RG ©2021 STARPOWER Semiconductor Ltd. 0.001 0.000001 0.0001 0.01 1 t [s] Fig 10. Diode-inverter Transient Thermal Impedance 11/5/2021 7/9 B01 DG10X12T2 IGBT Discrete Circuit Schematic 2 1 3 Package Dimensions Dimensions in Millimeters ©2021 STARPOWER Semiconductor Ltd. 11/5/2021 8/9 B01 DG10X12T2 IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2021 STARPOWER Semiconductor Ltd. 11/5/2021 9/9 B01