GD200SGY120C2S
IGBT Module
STARPOWER
IGBT
SEMICONDUCTOR
GD200SGY120C2S
1200V/200A 1 in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2016 STARPOWER Semiconductor Ltd.
11/30/2016
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GD200SGY120C2S
IGBT Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol
VCES
VGES
IC
ICM
PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ TC=25oC
@ TC=100oC
Pulsed Collector Current tp=1ms
Maximum Power Dissipation @ Tj=175oC
Values
1200
±20
309
200
400
1006
Unit
V
V
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current tp=1ms
Values
1200
200
400
Unit
V
A
A
Values
175
-40 to +150
-40 to +125
2500
Unit
o
C
o
C
o
C
V
A
A
W
Diode
Symbol
VRRM
IF
IFM
Module
Symbol
Tjmax
Tjop
TSTG
VISO
Description
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
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GD200SGY120C2S
IGBT Module
IGBT Characteristics TC=25oC unless otherwise noted
Symbol
VCE(sat)
VGE(th)
ICES
IGES
RGint
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
Parameter
Collector to Emitter
Saturation Voltage
Gate-Emitter Threshold
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
SC Data
Test Conditions
IC=200A,VGE=15V,
Tj=25oC
IC=200A,VGE=15V,
Tj=125oC
IC=200A,VGE=15V,
Tj=150oC
IC=5.0mA,VCE=VGE,
Tj=25oC
VCE=VCES,VGE=0V,
Tj=25oC
VGE=VGES,VCE=0V,
Tj=25oC
Min.
Max.
1.70
2.15
1.95
Unit
V
2.00
5.2
VCC=600V,IC=200A,
RG=1.1Ω,VGE=±15V,
Tj=25oC
VCC=600V,IC=200A,
RG=1.1Ω,VGE=±15V,
Tj=125oC
VCC=600V,IC=200A,
RG=1.1Ω,VGE=±15V,
Tj=150oC
tP≤10μs,VGE=15V,
Tj=150oC,VCC=900V,
VCEM≤1200V
©2016 STARPOWER Semiconductor Ltd.
Typ.
11/30/2016
6.0
6.8
V
1.0
mA
400
nA
4.0
150
32
330
93
Ω
ns
ns
ns
ns
11.2
mJ
11.3
mJ
161
37
412
165
ns
ns
ns
ns
19.8
mJ
17.0
mJ
161
43
433
185
ns
ns
ns
ns
21.9
mJ
19.1
mJ
800
A
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GD200SGY120C2S
IGBT Module
Diode Characteristics TC=25oC unless otherwise noted
Symbol
VF
Qr
IRM
Erec
Qr
IRM
Erec
Qr
IRM
Erec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
IF=200A,VGE=0V,Tj=25oC
IF=200A,VGE=0V,Tj=125oC
IF=200A,VGE=0V,Tj=150oC
Min.
Typ.
1.65
1.65
1.65
17.6
VR=600V,IF=200A,
-di/dt=5400A/μs,VGE=-15V
Tj=25oC
VR=600V,IF=200A,
-di/dt=5400A/μs,VGE=-15V
Tj=125oC
VR=600V,IF=200A,
-di/dt=5400A/μs,VGE=-15V
Tj=150oC
Max.
2.10
Units
V
μC
228
A
7.7
mJ
31.8
μC
238
A
13.8
mJ
36.6
μC
247
A
15.2
mJ
Module Characteristics TC=25oC unless otherwise noted
Symbol
LCE
RCC’+EE’
RthJC
RthCH
M
G
Parameter
Min.
Stray Inductance
Module Lead Resistance, Terminal to Chip
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
Terminal Connection Torque, Screw M6
Mounting Torque, Screw M6
Weight of Module
©2016 STARPOWER Semiconductor Ltd.
Typ.
Max.
20
0.18
0.149
0.206
0.017
0.024
0.010
K/W
K/W
2.5
3.0
11/30/2016
Unit
nH
mΩ
5.0
5.0
300
N.m
g
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GD200SGY120C2S
IGBT Module
400
400
VGE=15V
350
300
300
250
250
IC [A]
IC [A]
350
200
150
100
100
Tj=25℃
Tj=125℃
Tj=150℃
Tj=25℃
Tj=125℃
Tj=150℃
50
0
0
0
0.5
1
1.5 2 2.5
VCE [V]
3
3.5
5
Fig 1. IGBT Output Characteristics
6
7
8 9 10 11 12 13
VGE [V]
Fig 2. IGBT Transfer Characteristics
60
100
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
48
42
VCC=600V
RG=1.1Ω
VGE=±15V
36
30
80
70
VCC=600V
IC=200A
VGE=±15V
60
50
24
40
18
30
12
20
6
10
0
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
90
E [mJ]
54
E [mJ]
200
150
50
VCE=20V
0
0
50 100 150 200 250 300 350 400
IC [A]
Fig 3. IGBT Switching Loss vs. IC
©2016 STARPOWER Semiconductor Ltd.
0
2
4
6
8
RG [Ω]
10
Fig 4. IGBT Switching Loss vs. RG
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GD200SGY120C2S
IGBT Module
1
500
Module
IGBT
400
0.1
IC [A]
ZthJC [K/W]
300
200
0.01
RG=1.1Ω
VGE=±15V
Tj=150oC
100
i:
1
2
3
4
ri[K/W]: 0.0090 0.0491 0.0477 0.0432
0.01
0.02
0.05
0.1
τi[s]:
0
0
350
700
VCE [V]
1050
0.001
0.001
1400
Fig 5. RBSOA
0.01
0.1
t [s]
1
10
Fig 6. IGBT Transient Thermal Impedance
400
20
Tj=25℃
Tj=125℃
Tj=150℃
350
Erec Tj=125℃
Erec Tj=150℃
16
300
12
E [mJ]
IF [A]
250
200
8
150
100
VCC=600V
RG=1.1Ω
VGE=-15V
4
50
0
0
0
0.5
1
1.5
VF [V]
2
2.5
Fig 7. Diode Forward Characteristics
©2016 STARPOWER Semiconductor Ltd.
0
50 100 150 200 250 300 350 400
IF [A]
Fig 8. Diode Switching Loss vs. IF
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GD200SGY120C2S
IGBT Module
16
1
Erec Tj=125℃
15
Erec Tj=150℃
Diode
14
0.1
ZthJC [K/W]
E [mJ]
13
12
11
0.01
10
9
VCC=600V
IF=200A
VGE=-15V
8
0 1 2 3 4 5 6 7 8 9 10 11
RG [Ω]
Fig 9. Diode Switching Loss vs. RG
©2016 STARPOWER Semiconductor Ltd.
i:
1
2
3
4
ri[K/W]: 0.0122 0.0679 0.0660 0.0599
τi[s]:
0.01
0.02
0.05
0.1
0.001
0.001
0.01
0.1
t [s]
1
10
Fig 10. Diode Transient Thermal Impedance
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GD200SGY120C2S
IGBT Module
Circuit Schematic
Package Dimensions
Dimensions in Millimeters
©2016 STARPOWER Semiconductor Ltd.
11/30/2016
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GD200SGY120C2S
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2016 STARPOWER Semiconductor Ltd.
11/30/2016
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