GD30PJX65F1S

GD30PJX65F1S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD30PJX65F1S 650V/30A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features         Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated heatsink using DBC technology Pre-applied phase change material Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 1/12 Preliminary GD30PJX65F1S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT-inverter Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 650 ±20 46 30 60 123 Unit V V Value 650 30 60 Unit V A A Value 1600 30 270 360 Unit V A A A2s Value 650 ±20 25 15 30 87 Unit V V Value 650 15 30 Unit V A A Value 175 150 -40 to +150 -40 to +125 4000 Unit A A W Diode-inverter Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Diode-rectifier Symbol VRRM IO IFSM I2t Description Repetitive Peak Reverse Voltage Average Output Current 50Hz/60Hz,sine wave Surge Forward Current VR=0V,tp=10ms,Tj=45oC I2t-value,VR=0V,tp=10ms,Tj=45oC IGBT-brake Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC A A W Diode-brake Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature(inverter,brake) Maximum Junction Temperature (rectifier) Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 2/12 o C o C C V o Preliminary GD30PJX65F1S IGBT Module IGBT-inverter Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=30A,VGE=15V, Tj=25oC IC=30A,VGE=15V, Tj=125oC IC=30A,VGE=15V, Tj=150oC IC=0.48mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=30A, RG=15Ω,VGE=±15V, Tj=25oC VCC=300V,IC=30A, RG=15Ω,VGE=±15V, Tj=125oC VCC=300V,IC=30A, RG=15Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 Min. Typ. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 0 3.48 Ω nF 0.07 nF 0.21 20 16 112 36 μC ns ns ns ns 0.50 mJ 0.50 mJ 20 21 128 48 ns ns ns ns 0.65 mJ 0.60 mJ 20 22 144 52 ns ns ns ns 0.75 mJ 0.64 mJ 150 A 3/12 Preliminary GD30PJX65F1S IGBT Module Diode-inverter Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IC=30A,VGE=0V,Tj=25oC IC=30A,VGE=0V,Tj=125oC IC=30A,VGE=0V,Tj=150oC Min. VR=300V,IF=30A, -di/dt=2100A/μs,VGE=-15V Tj=25oC VR=300V,IF=30A, -di/dt=2100A/μs,VGE=-15V Tj=125oC VR=300V,IF=30A, -di/dt=2100A/μs,VGE=-15V Tj=150oC Typ. 1.60 1.55 1.50 1.3 Max. 2.05 Units V μC 44 A 0.35 mJ 2.3 μC 48 A 0.55 mJ 2.7 μC 49 A 0.65 mJ Diode-rectifier Characteristics TC=25oC unless otherwise noted Symbol VF IR Parameter Diode Forward Voltage Reverse Current Test Conditions IF=30A,Tj=150oC Min. Typ. 1.18 Tj=150oC,VR=1600V ©2019 STARPOWER Semiconductor Ltd. Max. 1/29/2019 V 1.0 4/12 Unit mA Preliminary GD30PJX65F1S IGBT Module IGBT-brake Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=15A,VGE=15V, Tj=25oC IC=15A,VGE=15V, Tj=125oC IC=15A,VGE=15V, Tj=150oC IC=0.24mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=15A, RG=22Ω,VGE=±15V, Tj=25oC VCC=300V,IC=15A, RG=22Ω,VGE=±15V, Tj=125oC VCC=300V,IC=15A, RG=22Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 Min. Typ. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 0 1.74 Ω nF 0.03 nF 0.10 14 11 88 68 μC ns ns ns ns 0.25 mJ 0.27 mJ 14 15 104 88 ns ns ns ns 0.32 mJ 0.35 mJ 14 15 112 96 ns ns ns ns 0.36 mJ 0.37 mJ 75 A 5/12 Preliminary GD30PJX65F1S IGBT Module Diode-brake Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IC=15A,VGE=0V,Tj=25oC IC=15A,VGE=0V,Tj=125oC IC=15A,VGE=0V,Tj=150oC Min. Typ. 1.60 1.55 1.50 0.80 VR=300V,IF=15A, -di/dt=1600A/μs,VGE=-15V Tj=25oC VR=300V,IF=15A, -di/dt=1600A/μs,VGE=-15V Tj=125oC VR=300V,IF=15A, -di/dt=1600A/μs,VGE=-15V Tj=150oC Max. 2.05 Units V μC 23 A 0.16 mJ 1.40 μC 25 A 0.28 mJ 1.70 μC 26 A 0.37 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value Test Conditions Min. TC=100oC,R100=1486.1Ω Typ. 22.0 -5 Max. 5 200 R2=R25exp[B25/50(1/T21/(298.15K))] 4000 Unit kΩ % mW K Module Characteristics TC=25oC unless otherwise noted Symbol RthJC RthCH M G Parameter Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake) Junction-to-Case (per Diode-brake) Case-to-Heatsink (per IGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per IGBT-brake) Case-to-Heatsink (per Diode-brake) Case-to-Sink (per Module) Mounting Torque, Screw M4 Weight of Module ©2019 STARPOWER Semiconductor Ltd. Min. Typ. 1.103 1.429 1.295 1.555 2.139 0.611 0.791 0.717 0.861 1.184 0.036 2.0 6/12 Unit K/W K/W 2.2 26 1/29/2019 Max. 1.213 1.572 1.425 1.711 2.353 N.m g Preliminary GD30PJX65F1S IGBT Module 60 60 VGE=15V 48 48 42 42 36 36 30 30 24 24 18 18 12 12 Tj=25℃ Tj=125℃ Tj=150℃ 6 0 0 0.5 1 VCE=20V 54 IC [A] IC [A] 54 1.5 2 VCE [V] Tj=25℃ Tj=125℃ 6 Tj=150℃ 0 2.5 3 Fig 1. IGBT-inverter Output Characteristics 5 6 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT-inverter Transfer Characteristics 3 2 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 1.5 Eon,Tj=125℃ Eoff,Tj=125℃ 2.5 Eon,Tj=150℃ Eoff,Tj=150℃ E [mJ] E [mJ] 2 1 1.5 1 0.5 VCC=300V RG=15Ω VGE=±15V VCC=300V IC=30A VGE=±15V 0.5 0 0 0 10 20 30 40 IC [A] 50 60 Fig 3. IGBT-inverter Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 30 60 90 RG [Ω] 120 150 Fig 4. IGBT-inverter Switching Loss vs. RG 1/29/2019 7/12 Preliminary GD30PJX65F1S IGBT Module 10 70 Module 60 IGBT ZthJH [K/W] IC [A] 50 40 30 20 1 RG=15Ω VGE=±15V Tj=150oC 10 i: 1 2 3 4 ri[K/W]: 0.1231 0.2377 0.7353 0.6179 0.0005 0.005 0.05 0.2 τi[s]: 0 0 150 300 450 VCE [V] 600 0.1 0.001 750 Fig 5. IGBT-inverter RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT-inverter Transient Thermal Impedance 60 1 Erec,Tj=125℃ Tj=25℃ 54 Tj=125℃ Erec,Tj=150℃ Tj=150℃ 48 0.8 42 0.6 E [mJ] IF [A] 36 30 24 0.4 18 12 0.2 VCC=300V RG=15Ω VGE=-15V 6 0 0 0 0.5 1 1.5 VF [V] 2 2.5 Fig 7. Diode-inverter Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 10 20 30 40 IF [A] 50 60 Fig 8. Diode-inverter Switching Loss vs. IF 1/29/2019 8/12 Preliminary GD30PJX65F1S IGBT Module 0.9 10 Erec,Tj=125℃ 0.8 Erec,Tj=150℃ 0.7 Diode ZthJH [K/W] E [mJ] 0.6 0.5 0.4 1 0.3 0.2 VCC=300V IF=30A VGE=-15V 0.1 i: 1 2 3 4 ri[K/W]: 0.1594 0.3080 0.9524 0.8002 0.0005 0.005 0.05 0.2 τi[s]: 0 0 30 60 90 RG [Ω] 120 0.1 0.001 150 Fig 9. Diode-inverter Switching Loss vs. RG 0.01 0.1 t [s] 1 10 Fig 10. Diode-inverter Transient Thermal Impedance 60 30 55 Tj=25℃ 50 Tj=150℃ VGE=15V 25 45 40 20 IC [A] IF [A] 35 30 15 25 20 10 15 10 5 Tj=25℃ Tj=125℃ Tj=150℃ 5 0 0 0.5 0.7 0.9 1.1 1.3 VF [V] 1.5 1.7 Fig 11. Diode-rectifier Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 0.5 1 1.5 2 VCE [V] 2.5 Fig 12. IGBT-brake Output Characteristics 1/29/2019 9/12 Preliminary 3 GD30PJX65F1S IGBT Module 100 30 Tj=25℃ Tj=125℃ Tj=150℃ 25 10 R [kΩ] IF [A] 20 15 1 10 5 0 0.1 0 0.5 1 1.5 VF [V] 2 2.5 Fig 13. Diode-brake Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 30 60 90 TC [oC] 120 150 Fig 14. NTC Temperature Characteristic 1/29/2019 10/12 Preliminary GD30PJX65F1S IGBT Module Circuit Schematic 18 19 12 1 21 22 23 14 16 13 20 15 17 2 4 10 8 6 3 5 11 9 7 Package Dimensions Dimensions in Millimeters ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 11/12 Preliminary GD30PJX65F1S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 12/12 Preliminary