DG120X07T2
IGBT Discrete
DOSEMI
IGBT
DG120X07T2
650V/120A IGBT with Diode
General Description
DOSEMI IGBT Power Discrete provides ultra
low conduction loss as well as low switching loss.
They are designed for the applications such as
general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology
Low switching loss
Maximum junction temperature 175oC
VCE(sat) with positive temperature coefficient
Fast & soft reverse recovery anti-parallel FWD
Lead free package
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2020 STARPOWER Semiconductor Ltd.
2/11/2020
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Preliminary
DG120X07T2
IGBT Discrete
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol
VCES
VGES
IC
ICM
PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ TC=25oC
@ TC=135oC
Pulsed Collector Current tp limited by Tjmax
Maximum Power Dissipation @ Tj=175oC
Value
650
±20
240
120
480
1250
Unit
V
V
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current @ TC=25oC
@ TC=110oC
Diode Maximum Forward Current tp limited by Tjmax
Value
650
228
120
480
Unit
V
Values
-40 to +175
-55 to +150
260
Unit
o
C
o
C
o
C
A
A
W
Diode
Symbol
VRRM
IF
IFM
A
A
Discrete
Symbol
Tjop
TSTG
TS
Description
Operating Junction Temperature
Storage Temperature Range
Soldering Temperature,1.6mm from case for 10s
©2020 STARPOWER Semiconductor Ltd.
2/11/2020
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Preliminary
DG120X07T2
IGBT Discrete
IGBT Characteristics TC=25oC unless otherwise noted
Symbol
VCE(sat)
VGE(th)
ICES
IGES
RGint
Cies
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
Parameter
Collector to Emitter
Saturation Voltage
Gate-Emitter Threshold
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Internal Gate Resistance
Input Capacitance
Reverse Transfer
Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
SC Data
Test Conditions
IC=120A,VGE=15V,
Tj=25oC
IC=120A,VGE=15V,
Tj=125oC
IC=120A,VGE=15V,
Tj=150oC
IC=1.92mA,VCE=VGE,
Tj=25oC
VCE=VCES,VGE=0V,
Tj=25oC
VGE=VGES,VCE=0V,
Tj=25oC
Min.
Max.
1.30
1.75
1.45
Unit
V
1.50
5.1
VCE=25V,f=100kHz,
VGE=0V
VGE=-15…+15V
VCC=300V,IC=120A,
RG=7.5Ω,VGE=±15V,
Tj=25oC
VCC=300V,IC=120A,
RG=7.5Ω,VGE=±15V,
Tj=125oC
VCC=300V,IC=120A,
RG=7.5Ω,VGE=±15V,
Tj=150oC
tP≤6μs,VGE=15V,
Tj=150 oC,VCC=300V,
VCEM≤650V
©2020 STARPOWER Semiconductor Ltd.
Typ.
2/11/2020
5.8
6.5
V
1.0
mA
400
nA
/
14.1
Ω
nF
0.42
nF
TBD
150
87
424
41
uC
ns
ns
ns
ns
3.15
mJ
2.71
mJ
135
93
455
58
ns
ns
ns
ns
4.05
mJ
3.18
mJ
149
102
500
64
ns
ns
ns
ns
4.46
mJ
3.50
mJ
600
A
3/6
Preliminary
DG120X07T2
IGBT Discrete
Diode Characteristics TC=25oC unless otherwise noted
Symbol
VF
Qr
IRM
Erec
Qr
IRM
Erec
Qr
IRM
Erec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
IF=120A,VGE=0V,Tj=25oC
IF=120A,VGE=0V,Tj=125oC
IF=120A,VGE=0V,Tj=150oC
Min.
Typ.
1.60
1.50
1.45
0.9
VR=300V,IF=120A,
-di/dt=1300A/μs,VGE=-15V
Tj=25oC
VR=300V,IF=120A,
-di/dt=1300A/μs,VGE=-15V
Tj=125oC
VR=300V,IF=120A,
-di/dt=1300A/μs,VGE=-15V
Tj=150oC
Max.
2.05
Unit
V
μC
22
A
0.22
mJ
1.7
μC
26
A
0.44
mJ
1.9
μC
29
A
0.51
mJ
Discrete Characteristics TC=25oC unless otherwise noted
Symbol
RthJC
RthJA
Parameter
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
Junction-to-Ambient
©2020 STARPOWER Semiconductor Ltd.
Min.
Typ.
40
2/11/2020
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Max.
0.120
0.261
Unit
K/W
K/W
Preliminary
DG120X07T2
IGBT Discrete
Circuit Schematic
Package Dimensions
Dimensions in Millimeters
©2020 STARPOWER Semiconductor Ltd.
2/11/2020
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Preliminary
DG120X07T2
IGBT Discrete
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2020 STARPOWER Semiconductor Ltd.
2/11/2020
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Preliminary