GD75HHU120C5S

GD75HHU120C5S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD75HHU120C5S 1200V/75A 4 in one-package General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and inductive heating. Features        NPT IGBT technology 10μs short circuit capability Low switching losses VCE(sat) with positive temperature coefficient Square RBSOA Low inductance case Fast & soft reverse recovery anti-parallel FWD Typical Applications    Switching mode power supply Inductive heating Welding machine Equivalent Circuit Schematic ©2013 STARPOWER Semiconductor Ltd. 4/26/2013 1/9 Rev.A GD75HHU120C5S IGBT Module Absolute Maximum Ratings TC=25℃ unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=80℃ Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=150℃ Values 1200 ±20 115 75 150 667 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 1200 75 150 Unit V A A Values 150 -40 to +125 -40 to +125 4000 3.0 to 6.0 Unit ℃ ℃ ℃ V N.m A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO M Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Mounting Torque, Screw M5 ©2013 STARPOWER Semiconductor Ltd. 4/26/2013 2/9 Rev.A GD75HHU120C5S IGBT Module IGBT Characteristics TC=25℃ unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Vol tage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=75A,VGE=15V, Tj=25℃ IC=75A,VGE=15V, Tj=125℃ IC=0.75mA,VCE=VGE, Tj=25℃ VCE=VCES,VGE=0V, Tj=25℃ VGE=VGES,VCE=0V, Tj=25℃ Min. Max. 3.10 3.55 Unit V 3.45 4.4 VCE=30V,f=1MHz, VGE=0V VGE=15V VCC=600V,IC=75A, RG=7.5Ω,VGE=±15V, Tj=25℃ VCC=600V,I C=75A, RG=7.5Ω,VGE=±15V, Tj=125℃ tP≤10μs,VGE=15 V, Tj=125℃,V CC=900V, VCEM≤1200V ©2013 STARPOWER Semiconductor Ltd. Typ. 4/26/2013 5.2 6.0 V 5.0 mA 400 nA / 6.35 Ω nF 0.23 nF 600 286 53 304 103 nC ns ns ns ns 4.16 mJ 2.17 mJ 297 56 321 136 ns ns ns ns 5.82 mJ 3.44 mJ 675 A 3/9 Rev.A GD75HHU120C5S IGBT Module Diode Characteristics TC=25℃ unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Parameter Diode Forward Vol tage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IC=75A,VGE=0V,T j=25℃ IC=75A,VGE=0V,T j=125℃ Min. Typ. 1.75 1.85 3.6 VR=600V,IF=75A, RG=7.5Ω,VGE=-15V Tj=25℃ VR=600V,IF=75A, RG=7.5Ω,VGE=-15V Tj=125℃ Max. 2.20 Units V μC 63 A 2.21 mJ 7.9 μC 73 A 4.48 mJ NTC Characteristics TC=25℃ unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation Test Conditions TC=100℃,R100=493.3Ω B25/50 B-value R2=R25exp[B25/50(1/T21/(298.15K))] Min. Typ. 5.0 -5 Max. 5 20.0 3375 Units kΩ % mW K Module Characteristics TC=25℃ unless otherwise noted Symbol LCE RCC’+EE’ RθJC RθCS RθCS G Parameter Min. Stray Inductance Module Lead Resistance,Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Sink (per IGBT) Case-to-Sink (per Diode) Case-to-Sink Weight of Module ©2013 STARPOWER Semiconductor Ltd. Typ. 30 2.20 Max. 0.225 0.370 0.129 0.212 0.02 200 4/26/2013 4/9 Unit nH mΩ K/W K/W K/W g Rev.A GD75HHU120C5S IGBT Module 150 150 VCE=20V VGE=15V 125 125 100 100 IC [A] IC [A] 25℃ 75 125℃ 75 25℃ 125℃ 50 50 25 25 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 4 5 6 VCE [V] 8 9 10 VGE [V] Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics 18 30 VCC=600V RG=7.5Ω VGE=±15V Tj=125℃ 16 14 VCC=600V IC=75A VGE=±15V Tj=125℃ 25 12 20 10 E [mJ] E [mJ] 7 EON 8 6 EON 15 10 4 5 2 EOFF EOFF 0 0 0 30 60 90 120 150 0 10 20 30 40 50 60 70 80 RG [Ω] IC [A] Fig 3. IGBT Switching Loss vs. IC ©2013 STARPOWER Semiconductor Ltd. Fig 4. IGBT Switching Loss vs. RG 4/26/2013 5/9 Rev.A GD75HHU120C5S IGBT Module 160 1 Module 140 IGBT 120 0.1 ZthJC [K/W] IC [A] 100 80 60 0.01 40 RG=7.5Ω VGE=±15V Tj=125℃ 20 i: 1 2 3 4 ri[K/W]: 0.0135 0.0743 0.0720 0.0652 0.01 0.02 0.05 0.1 τi[s]: 0 0 350 700 1050 0.001 0.001 1400 0.01 0.1 VCE [V] 1 10 t [s] Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance 150 6 125 5 EREC 4 E [mJ] IF [A] 100 75 50 3 2 VCC=600V RG=7.5Ω VGE=-15V Tj=125℃ 125℃ 25 1 25℃ 0 0 0 0.5 1 1.5 2 2.5 0 VF [V] Fig 7. Diode Forward Characteristics ©2013 STARPOWER Semiconductor Ltd. 30 60 90 120 IF [A] Fig 8. Diode Switching Loss vs. IF 4/26/2013 6/9 Rev.A 150 GD75HHU120C5S IGBT Module 5 1 Diode VCC=600V IF=75A VGE=-15V Tj=125℃ 4.5 4 ZthJC [K/W] E [mJ] 3.5 EREC 3 2.5 0.1 2 i: 1 2 3 4 ri[K/W]: 0.0222 0.1221 0.1184 0.1073 0.01 0.02 0.05 0.1 τi[s]: 1.5 1 0 15 30 45 60 75 0.01 0.001 0.01 RG [Ω] 0.1 1 t [s] Fig 9. Diode Switching Loss vs. RG Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 10 120 150 TC [℃] Fig 11. NTC Temperature Characteristic ©2013 STARPOWER Semiconductor Ltd. 4/26/2013 7/9 Rev.A GD75HHU120C5S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2013 STARPOWER Semiconductor Ltd. 4/26/2013 8/9 Rev.A GD75HHU120C5S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2013 STARPOWER Semiconductor Ltd. 4/26/2013 9/9 Rev.A