GD800HFY120C3S

GD800HFY120C3S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD800HFY120C3S 1200V/800A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    High Power Converters Motor Drivers AC Inverter Drives Equivalent Circuit Schematic ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 1/9 SN0A GD800HFY120C3S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=95oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 1203 800 1600 3836 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1200 800 1600 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 2/9 SN0A GD800HFY120C3S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=800A,VGE=15V, Tj=25oC IC=800A,VGE=15V, Tj=125oC IC=800A,VGE=15V, Tj=150oC IC=20.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=800A, RG=0.9Ω,VGE=±15V, Tj=25oC VCC=600V,IC=800A, RG=0.9Ω,VGE=±15V, Tj=125oC VCC=600V,IC=800A, RG=0.9Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V ©2017 STARPOWER Semiconductor Ltd. Typ. 4/24/2017 6.0 6.8 V 1.0 mA 400 nA 1.25 56.0 Ω nF 3.20 nF 7.4 257 96 628 103 μC ns ns ns ns 47 mJ 68 mJ 268 107 659 144 ns ns ns ns 71 mJ 103 mJ 278 118 680 155 ns ns ns ns 77 mJ 113 mJ 3200 A 3/9 SN0A GD800HFY120C3S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=800A,VGE=0V,Tj=25oC IF=800A,VGE=0V,Tj=125oC IF=800A,VGE=0V,Tj=150oC Min. VCC=600V,IF=800A, -di/dt=9500A/μs,VGE=±15V, Tj=25oC VCC=600V,IF=800A, -di/dt=9500A/μs,VGE=±15V, Tj=125oC VCC=600V,IF=800A, -di/dt=9500A/μs,VGE=±15V, Tj=150oC Typ. 1.70 1.65 1.65 76 Max. 2.15 Unit V μC 570 A 38.0 mJ 133 μC 760 A 73.2 mJ 152 μC 798 A 83.6 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 Weight of Module ©2017 STARPOWER Semiconductor Ltd. Min. Typ. 20 0.18 Max. 39.1 64.7 19.3 31.9 6.0 K/kW K/kW 1.8 8.0 4.25 2.1 10 5.75 1500 4/24/2017 Unit nH mΩ N.m g 4/9 SN0A GD800HFY120C3S IGBT Module 1600 1600 VGE=15V VCE=20V 1200 IC [A] IC [A] 1200 800 400 800 400 Tj=25℃ Tj=125℃ Tj=150℃ Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 4 Fig 1. IGBT Output Characteristics 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 900 300 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 250 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 800 700 VCC=600V RG=0.9Ω VGE=±15V 600 E [mJ] 200 E [mJ] 5 150 VCC=600V IC=800A VGE=±15V 500 400 300 100 200 50 100 0 0 0 400 800 IC [A] 1200 1600 Fig 3. IGBT Switching Loss vs. IC ©2017 STARPOWER Semiconductor Ltd. 0 2 4 6 RG [Ω] 8 Fig 4. IGBT Switching Loss vs. RG 4/24/2017 5/9 SN0A 10 GD800HFY120C3S IGBT Module 100 2000 IGBT Module 1600 ZthJC [K/kW] 10 IC [A] 1200 800 1 RG=0.9Ω VGE=±15V Tj=150oC 400 i: 1 2 3 4 ri[K/kW]: 16.4309 19.7011 2.2304 0.7376 τi[s]: 0.6897 0.0563 0.0300 0.0038 0 0 350 700 1050 VCE [V] 0.1 0.001 1400 Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 120 1600 Tj=25℃ Tj=125℃ Tj=150℃ Erec Tj=125℃ Erec Tj=150℃ 100 1200 E [mJ] IF [A] 80 800 60 40 400 VCC=600V RG=0.9Ω VGE=-15V 20 0 0 0 0.5 1 1.5 VF [V] 2 2.5 Fig 7. Diode Forward Characteristics ©2017 STARPOWER Semiconductor Ltd. 0 400 800 IF [A] 1200 Fig 8. Diode Switching Loss vs. IF 4/24/2017 6/9 SN0A 1600 GD800HFY120C3S IGBT Module 100 100 Erec Tj=125℃ Diode Erec Tj=150℃ ZthJC [K/kW] 80 E [mJ] 60 40 20 10 VCC=600V IF=800A VGE=-15V i: 1 2 3 4 ri[K/kW]: 27.1886 32.6001 3.6909 1.2204 τi[s]: 0.6897 0.0563 0.0300 0.0038 0 0 2 4 6 RG [Ω] 8 10 Fig 9. Diode Switching Loss vs. RG ©2017 STARPOWER Semiconductor Ltd. 1 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 4/24/2017 7/9 SN0A GD800HFY120C3S IGBT Module Circuit Schematic E1 C2 E1 G1 C2 C1 G2 E2 C1 E2 Package Dimensions Dimensions in Millimeters ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 8/9 SN0A GD800HFY120C3S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 9/9 SN0A