DG50X12T2

DG50X12T2 IGBT Discrete DOSEMI IGBT DG50X12T2 1200V/50A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features       Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2020 STARPOWER Semiconductor Ltd. 8/5/2020 1/9 Preliminary DG50X12T2 IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=134oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 100 50 200 1049 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 1200 50 200 Unit V A A Values -40 to +175 -55 to +150 260 Unit o C o C o C A A W Diode Symbol VRRM IF IFM Discrete Symbol Tjop TSTG TS Description Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s ©2020 STARPOWER Semiconductor Ltd. 8/5/2020 2/9 Preliminary DG50X12T2 IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=50A,VGE=15V, Tj=25oC IC=50A,VGE=15V, Tj=125oC IC=50A,VGE=15V, Tj=150oC IC=1.80mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=50A, RG=15Ω,VGE=±15V, Tj=25oC VCC=600V,IC=50A, RG=15Ω,VGE=±15V, Tj=125oC VCC=600V,IC=50A, RG=15Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2020 STARPOWER Semiconductor Ltd. 8/5/2020 Min. Typ. Max. 1.75 2.20 2.00 Unit V 2.05 5.6 6.2 6.8 V 5.0 mA 400 nA 0 4.66 Ω nF 0.13 nF 0.35 137 26 323 78 μC ns ns ns ns 4.88 mJ 2.74 mJ 146 34 421 147 ns ns ns ns 6.59 mJ 4.21 mJ 146 34 441 166 ns ns ns ns 7.19 mJ 4.69 mJ 200 A 3/9 Preliminary DG50X12T2 IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=50A,VGE=0V,Tj=25oC IF=50A,VGE=0V,Tj=125oC IF=50A,VGE=0V,Tj=150oC Min. Typ. 1.85 1.90 1.95 6.3 VR=600V,IF=50A, -di/dt=1400A/μs,VGE=-15V Tj=25oC VR=600V,IF=50A, -di/dt=1400A/μs,VGE=-15V Tj=125oC VR=600V,IF=50A, -di/dt=1400A/μs,VGE=-15V Tj=150oC Max. 2.30 Unit V μC 62 A 1.67 mJ 10.1 μC 69 A 2.94 mJ 11.5 μC 72 A 3.63 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RthJC RthJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2020 STARPOWER Semiconductor Ltd. Min. 8/5/2020 Typ. Max. 0.143 0.247 Unit K/W 40 K/W 4/9 Preliminary DG50X12T2 IGBT Discrete 100 100 90 VGE=15V 80 80 70 70 60 60 IC [A] IC [A] 90 50 50 40 40 30 30 20 20 Tj=25℃ Tj=125℃ Tj=150℃ 10 VCE=20V Tj=25℃ Tj=125℃ Tj=150℃ 10 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 Fig 1. IGBT-inverter Output Characteristics 5 28 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 25 24 15 E [mJ] VCC=600V RG=15Ω VGE=±15V 8 9 10 11 12 13 VGE [V] Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 20 20 7 Fig 2. IGBT-inverter Transfer Characteristics 30 E [mJ] 6 VCC=600V IC=50A VGE=±15V 16 12 10 8 5 4 0 0 0 20 40 60 IC [A] 80 100 Fig 3. IGBT-inverter Switching Loss vs. IC ©2020 STARPOWER Semiconductor Ltd. 0 30 60 90 RG [Ω] 120 150 Fig 4. IGBT-inverter Switching Loss vs. RG 8/5/2020 5/9 Preliminary DG50X12T2 IGBT Discrete 110 1 100 Module 90 80 IGBT ZthJC [K/W] IC [A] 70 60 50 0.1 40 30 RG=15Ω VGE=±15V Tj=150oC 20 10 i: 1 2 3 4 5 ri[K/W]: 0.0173 0.0460 0.0779 0.0016 0.0002 τi[s]: 0.0004 0.0027 0.0199 0.5249 12.3916 0 0 350 700 VCE [V] 1050 Fig 5. IGBT-inverter RBSOA 100 0.01 0.001 1400 0.1 t [s] 1 10 Fig 6. IGBT-inverter Transient Thermal Impedance 5 Tj=25℃ Tj=125℃ Tj=150℃ 90 0.01 Erec Tj=125℃ 80 Erec Tj=150℃ 4 70 3 E [mJ] IF [A] 60 50 40 2 30 20 VCC=600V RG=15Ω VGE=-15V 1 10 0 0 0 0.5 1 1.5 2 VF [V] 2.5 3 Fig 7. Diode-inverter Forward Characteristics ©2020 STARPOWER Semiconductor Ltd. 0 20 40 60 IF [A] 80 100 Fig 8. Diode-inverter Switching Loss vs. IF 8/5/2020 6/9 Preliminary DG50X12T2 IGBT Discrete 4 1 Erec Tj=125℃ Erec Tj=150℃ 3.5 Diode ZthJC [K/W] E [mJ] 3 2.5 0.1 2 VCC=600V IF=50A VGE=-15V 1.5 i: 1 2 3 4 5 ri[K/W]: 0.0350 0.0962 0.1124 0.0032 0.0002 τi[s]: 0.0004 0.0027 0.0165 0.3745 11.6917 1 0 30 60 90 RG [Ω] 120 150 Fig 9. Diode-inverter Switching Loss vs. RG ©2020 STARPOWER Semiconductor Ltd. 0.01 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode-inverter Transient Thermal Impedance 8/5/2020 7/9 Preliminary DG50X12T2 IGBT Discrete Circuit Schematic Package Dimensions Dimensions in Millimeters ©2020 STARPOWER Semiconductor Ltd. 8/5/2020 8/9 Preliminary DG50X12T2 IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2020 STARPOWER Semiconductor Ltd. 8/5/2020 9/9 Preliminary