GD100PIX65C6S

GD100PIX65C6S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD100PIX65C6S 650V/100A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd. 3/17/2018 1/13 Preliminary GD100PIX65C6S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT-inverter Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=70oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 650 ±20 130 100 200 331 Unit V V Value 650 100 200 Unit V A A Value 1600 100 1100 6050 Unit V A A A2s Value 650 ±20 77 50 100 208 Unit V V Value 650 30 60 Unit V A A Value 175 150 -40 to +150 -40 to +125 2500 Unit A A W Diode-inverter Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Diode-rectifier Symbol VRRM IO IFSM I2t Description Repetitive Peak Reverse Voltage Average Output Current 50Hz/60Hz,sine wave Surge Forward Current VR=0V,tp=10ms,Tj=45oC I2t-value,VR=0V,tp=10ms,Tj=45oC IGBT-brake Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=90oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC A A W Diode-brake Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature(inverter,brake) Maximum Junction Temperature (rectifier) Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2018 STARPOWER Semiconductor Ltd. 3/17/2018 2/13 o C o C C V o Preliminary GD100PIX65C6S IGBT Module IGBT-inverter Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=100A,VGE=15V, Tj=25oC IC=100A,VGE=15V, Tj=125oC IC=100A,VGE=15V, Tj=150oC IC=1.60mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=100A, RG=3.3Ω,VGE=±15V, Tj=25oC VCC=300V,IC=100A, RG=3.3Ω,VGE=±15V, Tj=125oC VCC=300V,IC=100A, RG=3.3Ω,VGE=±15V, Tj=150oC Min. Typ. Max. 1.45 1.90 1.60 3/17/2018 V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 2.0 11.6 Ω nF 0.23 nF 0.69 40 20 192 40 μC ns ns ns ns 0.44 mJ 2.00 mJ 48 24 208 52 ns ns ns ns 0.68 mJ 2.68 mJ 52 24 216 60 ns ns ns ns 0.78 mJ 2.80 mJ 500 A tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2018 STARPOWER Semiconductor Ltd. Unit 3/13 Preliminary GD100PIX65C6S IGBT Module Diode-inverter Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=100A,VGE=0V,Tj=25oC IF=100A,VGE=0V,Tj=125oC IF=100A,VGE=0V,Tj=150oC Min. Typ. 1.55 1.50 1.45 Max. 2.00 Unit V 4.6 μC 99 A 1.32 mJ 8.6 μC 121 A 2.37 mJ 9.9 μC 127 A 2.64 mJ VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=25oC VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=125oC VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=150oC Diode-rectifier Characteristics TC=25oC unless otherwise noted Symbol VF IR Parameter Diode Forward Voltage Reverse Current Test Conditions Min. o IF=100A,VGE=0V,Tj=150 C Typ. 1.17 o Tj=150 C,VR=1600V ©2018 STARPOWER Semiconductor Ltd. 3/17/2018 Max. V 2.0 4/13 Unit mA Preliminary GD100PIX65C6S IGBT Module IGBT-brake Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=50A,VGE=15V, Tj=25oC IC=50A,VGE=15V, Tj=125oC IC=50A,VGE=15V, Tj=150oC IC=0.80mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=50A, RG=6.8Ω,VGE=±15V, Tj=25oC VCC=300V,IC=50A, RG=6.8Ω,VGE=±15V, Tj=125oC VCC=300V,IC=50A, RG=6.8Ω,VGE=±15V, Tj=150oC Min. Typ. Max. 1.45 1.90 1.60 3/17/2018 V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 0 5.80 Ω nF 0.11 nF 0.35 18 15 136 24 uC ns ns ns ns 0.32 mJ 0.96 mJ 18 18 152 32 ns ns ns ns 0.46 mJ 1.28 mJ 18 18 160 40 ns ns ns ns 0.51 mJ 1.36 mJ 250 A tP≤6μs,VGE=15V, Tj=150 oC,VCC=360V, VCEM≤650V ©2018 STARPOWER Semiconductor Ltd. Unit 5/13 Preliminary GD100PIX65C6S IGBT Module Diode-brake Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IC=30A,VGE=0V,Tj=25oC IC=30A,VGE=0V,Tj=125oC IC=30A,VGE=0V,Tj=150oC Min. VR=300V,IF=30A, -di/dt=2100A/μs,VGE=-15V Tj=25oC VR=300V,IF=30A, -di/dt=2100A/μs,VGE=-15V Tj=125oC VR=300V,IF=30A, -di/dt=2100A/μs,VGE=-15V Tj=150oC Typ. 1.60 1.55 1.50 1.3 Max. 2.05 Units V μC 44 A 0.35 mJ 2.3 μC 48 A 0.55 mJ 2.7 μC 49 A 0.65 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions TC=100 oC,R100=493.3Ω R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] ©2018 STARPOWER Semiconductor Ltd. 3/17/2018 Min. Typ. 5.0 -5 Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K 6/13 Preliminary GD100PIX65C6S IGBT Module Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RAA’+CC’ RthJC RthCH M G Parameter Min. Stray Inductance Module Lead Resistance,Terminal to Chip Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake) Junction-to-Case (per Diode-brake) Case-to-Sink (per IGBT-inverter) Case-to-Sink (per Diode-inverter) Case-to-Sink (per Diode-rectifier) Case-to-Sink (per IGBT-brake) Case-to-Sink (per Diode-brake) Case-to-Sink (per per Module) Mounting Torque, Screw:M5 Weight of Module ©2018 STARPOWER Semiconductor Ltd. Typ. 60 4.00 2.00 Max. mΩ 0.452 0.768 0.536 0.719 1.133 0.141 0.239 0.167 0.224 0.352 0.009 3.0 3/17/2018 7/13 K/W K/W 6.0 300 Unit nH N.m g Preliminary GD100PIX65C6S IGBT Module 200 200 VGE=15V VCE=20V 120 120 IC [A] 160 IC [A] 160 80 80 40 40 Tj=25℃ Tj=25℃ Tj=125℃ Tj=150℃ Tj=125℃ Tj=150℃ 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCE [V] Fig 1. IGBT-inverter Output Characteristics 5 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT-inverter Transfer Characteristics 8 6 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 5 4 6 VCC=300V RG=3.3Ω VGE=±15V 3 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 7 5 E [mJ] E [mJ] 6 4 3 2 2 1 VCC=300V IC=100A VGE=±15V 1 0 0 0 40 80 120 IC [A] 160 200 Fig 3. IGBT-inverter Switching Loss vs. IC ©2018 STARPOWER Semiconductor Ltd. 0 5 10 15 20 RG [Ω] 25 30 35 Fig 4. IGBT-inverter Switching Loss vs. RG 3/17/2018 8/13 Preliminary GD100PIX65C6S IGBT Module 1 240 IGBT Module 200 ZthJC [K/W] IC [A] 160 120 0.1 80 RG=3.3Ω VGE=±15V Tj=150oC 40 i: 1 2 3 4 ri[K/W]: 0.0270 0.1491 0.1448 0.1311 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.01 0.001 100 200 300 400 500 600 700 VCE [V] Fig 5. IGBT-inverter RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT-inverter Transient Thermal Impedance 5 200 Tj=25℃ Tj=125℃ Tj=150℃ 160 Erec,Tj=125℃ 4 Erec,Tj=150℃ 4 3 IF [A] E [mJ] 120 3 2 80 2 1 40 VCC=300V RG=3.3Ω VGE=-15V 1 0 0 0 0.4 0.8 1.2 VF [V] 1.6 2 Fig 7. Diode-inverter Forward Characteristics ©2018 STARPOWER Semiconductor Ltd. 0 40 80 120 IF [A] 160 200 Fig 8. Diode-inverter Switching Loss vs. IF 3/17/2018 9/13 Preliminary GD100PIX65C6S IGBT Module 1 4 Erec,Tj=125℃ 3 Diode Erec,Tj=150℃ ZthJC [K/W] E [mJ] 3 2 2 0.1 1 VCC=300V IF=100A VGE=-15V 1 i: 1 2 3 4 ri[K/W]: 0.0460 0.2534 0.2459 0.2227 0.01 0.02 0.05 0.1 τi[s]: 0 0 5 10 15 20 RG [Ω] 25 30 0.01 0.001 35 Fig 9. Diode-inverter Switching Loss vs. RG 0.1 t [s] 1 10 Fig 10. Diode-inverter Transient Thermal Impedance 200 100 Tj=25℃ 175 0.01 90 VGE=15V Tj=150℃ 80 150 70 60 IC [A] IF [A] 125 100 50 40 75 30 50 20 25 Tj=25℃ Tj=125℃ Tj=150℃ 10 0 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 VF [V] Fig 11. Diode-rectifier Forward Characteristics ©2018 STARPOWER Semiconductor Ltd. 0 0.5 1 1.5 2 VCE [V] 2.5 3 Fig 12. IGBT-brake-chopper Output Characteristics 3/17/2018 10/13 Preliminary GD100PIX65C6S IGBT Module 100 60 Tj=25℃ Tj=125℃ Tj=150℃ 50 10 R [kΩ] IF [A] 40 30 1 20 10 0 0.1 0 0.5 1 1.5 VF [V] 2 2.5 Fig 13. Diode-brake-chopper Forward Characteristics ©2018 STARPOWER Semiconductor Ltd. 0 30 60 90 TC [oC] 120 Fig 14. NTC Temperature Characteristic 3/17/2018 11/13 Preliminary 150 GD100PIX65C6S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2018 STARPOWER Semiconductor Ltd. 3/17/2018 12/13 Preliminary GD100PIX65C6S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2018 STARPOWER Semiconductor Ltd. 3/17/2018 13/13 Preliminary