GD150HFY120C8S

GD150HFY120C8S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD150HFY120C8S 1200V/150A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology Low switching loss 10μs short circuit capability Low inductance case VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 1/9 SN0A GD150HFY120C8S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Values 1200 ±20 291 150 300 1102 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 1200 150 300 Unit V A A Values 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 2/9 SN0A GD150HFY120C8S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=150A,VGE=15V, Tj=25oC IC=150A,VGE=15V, Tj=125oC IC=150A,VGE=15V, Tj=150oC IC=3.75mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=150A, RG=1.1Ω,VGE=±15V, Tj=25oC VCC=600V,IC=150A, RG=1.1Ω,VGE=±15V, Tj=125oC VCC=600V,IC=150A, RG=1.1Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2017 STARPOWER Semiconductor Ltd. Typ. 4/24/2017 6.0 6.8 V 1.0 mA 400 nA 2.5 10.5 Ω nF 0.60 nF 1.36 123 27 407 66 μC ns ns ns ns 5.35 mJ 11.0 mJ 139 32 495 116 ns ns ns ns 9.63 mJ 16.5 mJ 144 32 528 138 ns ns ns ns 10.7 mJ 17.6 mJ 600 A 3/9 SN0A GD150HFY120C8S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=150A,VGE=0V,Tj=25oC IF=150A,VGE=0V,Tj=125oC IF=150A,VGE=0V,Tj=150oC Min. Typ. 1.65 1.65 1.65 13.3 VR=600V,IF=150A, -di/dt=5800A/μs,VGE=-15V Tj=25oC VR=600V,IF=150A, -di/dt=5800A/μs,VGE=-15V Tj=125oC VR=600V,IF=150A, -di/dt=5800A/μs,VGE=-15V Tj=150oC Max. 2.10 Units V μC 209 A 6.65 mJ 23.8 μC 228 A 10.9 mJ 26.6 μC 238 A 12.8 mJ Module Characteristics TC=25oC unless otherwise noted Symbol RthJC RthCH M G Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 Weight of Module ©2017 STARPOWER Semiconductor Ltd. Min. Typ. Max. 0.136 0.313 0.132 0.304 0.046 2.5 3.0 4/24/2017 4/9 K/W K/W 5.0 5.0 200 Unit N.m g SN0A GD150HFY120C8S IGBT Module 300 300 250 250 200 200 IC [A] IC [A] VGE=15V 150 100 150 100 Tj=25℃ Tj=125℃ Tj=150℃ 50 50 0 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 5 Fig 1. IGBT Output Characteristics 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 35 35 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 30 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 30 25 25 VCC=600V RG=1.1Ω VGE=±15V 20 E [mJ] E [mJ] VCE=20V 15 10 20 15 10 5 VCC=600V IC=150A VGE=±15V 5 0 0 0 50 100 150 200 IC [A] 250 300 Fig 3. IGBT Switching Loss vs. IC ©2017 STARPOWER Semiconductor Ltd. 0 2 4 6 8 RG [Ω] 10 Fig 4. IGBT Switching Loss vs. RG 4/24/2017 5/9 SN0A 12 GD150HFY120C8S IGBT Module 1 350 Module 300 IGBT 250 ZthJC [K/W] IC [A] 0.1 200 150 0.01 100 RG=1.1Ω VGE=±15V Tj=150oC 50 i: 1 2 3 4 ri[K/W]: 0.0081 0.0448 0.0436 0.0395 0.01 0.02 0.05 0.1 τi[s]: 0 0 350 700 VCE [V] 1050 0.001 0.001 1400 Fig 5. RBSOA 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 300 18 Tj=25℃ Tj=125℃ Tj=150℃ 250 Erec Tj=125℃ Erec Tj=150℃ 15 12 E [mJ] 200 IF [A] 0.01 150 100 9 6 50 VCC=600V RG=1.1Ω VGE=-15V 3 0 0 0 0.5 1 1.5 VF [V] 2 2.5 Fig 7. Diode Forward Characteristics ©2017 STARPOWER Semiconductor Ltd. 0 50 100 150 200 IF [A] 250 Fig 8. Diode Switching Loss vs. IF 4/24/2017 6/9 SN0A 300 GD150HFY120C8S IGBT Module 1 13 Erec Tj=125℃ 12 Erec Tj=150℃ Diode ZthJC [K/W] E [mJ] 11 10 9 0.1 8 VCC=600V IF=150A VGE=-15V 7 i: 1 2 3 4 ri[K/W]: 0.0188 0.1033 0.1002 0.0907 0.01 0.02 0.05 0.1 τi[s]: 6 0 2 4 6 8 RG [Ω] 10 12 Fig 9. Diode Switching Loss vs. RG ©2017 STARPOWER Semiconductor Ltd. 0.01 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 4/24/2017 7/9 SN0A GD150HFY120C8S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 8/9 SN0A GD150HFY120C8S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2017 STARPOWER Semiconductor Ltd. 4/24/2017 9/9 SN0A