GD225HFX170C6S

GD225HFX170C6S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD225HFX170C6S 1700V/225A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 1/9 preliminary GD225HFX170C6S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1700 ±20 396 225 450 1530 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1700 225 450 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 2/9 preliminary GD225HFX170C6S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=225A,VGE=15V, Tj=25oC IC=225A,VGE=15V, Tj=125oC IC=225A,VGE=15V, Tj=150oC IC=9.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=900V,IC=225A, RGon=3.3Ω,RGoff=6.2Ω, VGE=±15V, Tj=25oC VCC=900V,IC=225A, RGon=3.3Ω,RGoff=6.2Ω, VGE=±15V, Tj=125oC VCC=900V,IC=225A, RGon=3.3Ω,RGoff=6.2Ω, VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 Typ. Max. 1.85 2.20 2.25 Unit V 2.35 5.6 6.2 6.8 V 5.0 mA 400 nA 2.8 27.1 Ω nF 0.66 nF 2.12 187 76 587 350 μC ns ns ns ns 56.1 mJ 52.3 mJ 200 85 693 662 ns ns ns ns 75.9 mJ 80.9 mJ 208 90 704 744 ns ns ns ns 82.8 mJ 87.7 mJ 900 A 3/9 preliminary GD225HFX170C6S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=225A,VGE=0V,Tj=25oC IF=225A,VGE=0V,Tj=125oC IF=225A,VGE=0V,Tj=150oC Min. Typ. 1.80 1.90 1.95 63.0 VR=900V,IF=225A, -di/dt=3565A/μs,VGE=-15V Tj=25oC VR=900V,IF=225A, -di/dt=3565A/μs,VGE=-15V Tj=125oC VR=900V,IF=225A, -di/dt=3565A/μs,VGE=-15V Tj=150oC Max. 2.25 Units V μC 352 A 37.4 mJ 107 μC 394 A 71.0 mJ 121 μC 385 A 82.8 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω Typ. 5.0 -5 R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 Weight of Module ©2019 STARPOWER Semiconductor Ltd. Min. Typ. 20 1.10 Max. 0.098 0.158 0.029 0.047 0.009 3.0 3.0 1/29/2019 4/9 K/W K/W 6.0 6.0 350 Unit nH mΩ N.m g preliminary GD225HFX170C6S IGBT Module 450 450 VGE=15V 400 350 350 300 300 250 250 IC [A] IC [A] 400 200 150 VCE=20V 200 150 100 100 Tj=25℃ Tj=125℃ 50 Tj=25℃ Tj=125℃ Tj=150℃ 50 Tj=150℃ 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 4 5 Fig 1. IGBT Output Characteristics 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT Transfer Characteristics 400 350 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 300 300 VCC=900V RGon=3.3Ω RGoff=6.2Ω VGE=±15V 250 E [mJ] 200 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 350 250 E [mJ] 6 150 200 150 100 100 50 VCC=900V IC=225A VGE=±15V 50 0 0 0 90 180 270 IC [A] 360 450 Fig 3. IGBT Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 10 20 30 40 RG [Ω] 50 60 Fig 4. IGBT Switching Loss vs. RG 1/29/2019 5/9 preliminary 70 GD225HFX170C6S IGBT Module 0.1 500 IGBT Module 400 IC [A] ZthJC [K/W] 300 200 0.01 RGoff=6.2Ω VGE=±15V Tj=150oC 100 i: 1 2 3 4 ri[K/W]: 0.0056 0.0325 0.0314 0.0285 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.001 0.001 300 600 900 1200 1500 1800 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 450 120 Tj=25℃ Tj=125℃ Tj=150℃ 400 Erec Tj=125℃ Erec Tj=150℃ 100 350 80 250 E [mJ] IF [A] 300 200 150 60 40 100 VCC=900V RGon=3.3Ω VGE=±15V 20 50 0 0 0.0 0.5 1.0 1.5 2.0 VF [V] 2.5 3.0 Fig 7. Diode Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 90 180 270 IF [A] 360 Fig 8. Diode Switching Loss vs. IF 1/29/2019 6/9 preliminary 450 GD225HFX170C6S IGBT Module 1 100 Erec Tj=125℃ Erec Tj=150℃ Diode 80 0.1 E [mJ] ZthJC [K/W] 60 40 0.01 20 VCC=900V IF=225A VGE=-15V i: 1 2 3 4 ri[K/W]: 0.0093 0.0519 0.0507 0.0461 τi[s]: 0.01 0.02 0.05 0.1 0 0 5 10 15 20 RG [Ω] 25 30 35 Fig 9. Diode Switching Loss vs. RG 0.001 0.001 0.01 0.1 t [s] 1 Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 10 150 Fig 11. NTC Temperature Characteristic ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 7/9 preliminary GD225HFX170C6S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters 9 8 6 7 5 4 10 11 3 1 2 A B ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 8/9 preliminary GD225HFX170C6S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 1/29/2019 9/9 preliminary