GD3600SGY120C4S

GD3600SGY120C4S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD3600SGY120C4S 1200V/3600A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 6/19/2019 1/9 Preliminary GD3600SGY120C4S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=60oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 4302 3600 7200 11.90 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1200 3600 7200 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A kW Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2019 STARPOWER Semiconductor Ltd. 6/19/2019 2/9 Preliminary GD3600SGY120C4S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=3600A,VGE=15V, Tj=25oC IC=3600A,VGE=15V, Tj=125oC IC=3600A,VGE=15V, Tj=150oC IC=90.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=3600A, RGon=1.3Ω, RGoff=0.22Ω, VGE=±15V,Tj=25oC VCC=600V,IC=3600A, RGon=1.3Ω, RGoff=0.22Ω, VGE=±15V,Tj=125oC VCC=600V,IC=3600A, RGon=1.3Ω, RGoff=0.22Ω, VGE=±15V,Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V ©2019 STARPOWER Semiconductor Ltd. 6/19/2019 Min. Typ. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 6.0 6.8 V 1.0 mA 400 nA 0.31 252 Ω nF 14.4 nF 31.2 471 460 1185 237 μC ns ns ns ns 519 mJ 834 mJ 492 460 1288 258 ns ns ns ns 637 mJ 922 mJ 492 460 1339 258 ns ns ns ns 685 mJ 953 mJ 14.4 kA 3/9 Preliminary GD3600SGY120C4S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=3600A,VGE=0V,Tj=25oC IF=3600A,VGE=0V,Tj=125oC IF=3600A,VGE=0V,Tj=150oC Min. VCC=600V,IF=3600A, -di/dt=6935A/μs,VGE=±15V, Tj=25oC VCC=600V,IF=3600A, -di/dt=6935A/μs,VGE=±15V, Tj=125oC VCC=600V,IF=3600A, -di/dt=6935A/μs,VGE=±15V, Tj=150oC Typ. 1.65 1.65 1.65 266 Max. 2.10 Unit V μC 879 A 124 mJ 551 μC 1425 A 247 mJ 618 μC 1473 A 285 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Min. Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M6 Weight of Module ©2019 STARPOWER Semiconductor Ltd. Typ. 6.0 0.12 Max. 12.7 19.7 6.5 10.2 4.0 1.8 8.0 4.25 6/19/2019 4/9 K/kW K/kW 2.1 10 5.75 2300 Unit nH mΩ N.m g Preliminary GD3600SGY120C4S IGBT Module 7200 7200 6000 6000 4800 4800 IC [A] IC [A] VGE=15V 3600 2400 3600 2400 1200 1200 Tj=25℃ Tj=125℃ Tj=150℃ 0 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 5 Fig 1. IGBT Output Characteristics 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 3200 8000 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 2400 VCC=600V RGon=1.3Ω RGoff=0.22Ω VGE=±15V 2000 1600 6000 5000 4000 1200 3000 800 2000 400 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 7000 E [mJ] 2800 E [mJ] VCE=20V VCC=600V IC=3600A VGE=±15V 1000 0 0 0 1200 2400 3600 4800 6000 7200 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 2 4 6 8 RG [Ω] 10 12 Fig 4. IGBT Switching Loss vs. RG 6/19/2019 5/9 Preliminary 14 GD3600SGY120C4S IGBT Module 100 8400 Module 7200 IGBT 6000 ZthJC [K/kW] IC [A] 10 4800 3600 1 2400 RGoff=0.22Ω VGE=±15V Tj=150oC 1200 i: 1 2 3 4 ri[K/kW]: 5.3369 6.3991 0.7245 0.2395 τi[s]: 0.6897 0.0563 0.0300 0.0038 0 0 0.1 0.001 200 400 600 800 100012001400 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 400 7200 Tj=25℃ Tj=125℃ Tj=150℃ 6000 Erec Tj=125℃ 350 Erec Tj=150℃ 300 250 E [mJ] IF [A] 4800 3600 200 150 2400 100 1200 VCC=600V RGon=1.3Ω VGE=-15V 50 0 0 0 0.4 0.8 1.2 1.6 VF [V] 2 2.4 Fig 7. Diode Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 1200 2400 3600 4800 6000 7200 IF [A] Fig 8. Diode Switching Loss vs. IF 6/19/2019 6/9 Preliminary GD3600SGY120C4S IGBT Module 100 300 Erec Tj=125℃ Erec Tj=150℃ 250 Diode 10 ZthJC [K/kW] E [mJ] 200 150 1 100 VCC=600V IF=3600A VGE=-15V 50 i: 1 ri[K/kW]: 8.2783 τi[s]: 0.6897 0 0 3 6 9 RG [Ω] 12 15 Fig 9. Diode Switching Loss vs. RG ©2019 STARPOWER Semiconductor Ltd. 0.1 0.001 0.01 2 3 4 9.9263 1.1237 0.3717 0.0563 0.0300 0.0038 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 6/19/2019 7/9 Preliminary GD3600SGY120C4S IGBT Module Circuit Schematic 3 2 1 9 7 5 8 6 4 Package Dimensions Dimensions in Millimeters ©2019 STARPOWER Semiconductor Ltd. 6/19/2019 8/9 Preliminary GD3600SGY120C4S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 6/19/2019 9/9 Preliminary