GD450HTY120C7S

GD450HTY120C7S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD450HTY120C7S 1200V/450A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 12/17/2016 1/9 SF0A GD450HTY120C7S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 680 450 900 2173 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1200 450 900 Unit V A A Value 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 12/17/2016 2/9 SF0A GD450HTY120C7S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=450A,VGE=15V, Tj=25oC IC=450A,VGE=15V, Tj=125oC IC=450A,VGE=15V, Tj=150oC IC=11.3mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=450A, RG=1.3Ω,VGE=±15V, Tj=25oC VCC=600V,IC=450A, RG=1.3Ω,VGE=±15V, Tj=125oC VCC=600V,IC=450A, RG=1.3Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. Typ. 12/17/2016 6.0 6.8 V 1.0 mA 400 nA 1.7 29.6 Ω nF 1.61 nF 3.32 203 64 491 79 μC ns ns ns ns 16.1 mJ 38.0 mJ 235 75 581 109 ns ns ns ns 27.8 mJ 55.5 mJ 235 75 621 119 ns ns ns ns 30.5 mJ 61.5 mJ 1800 A 3/9 SF0A GD450HTY120C7S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=450A,VGE=0V,Tj=25oC IF=450A,VGE=0V,Tj=125oC IF=450A,VGE=0V,Tj=150oC Min. Typ. 1.65 1.65 1.65 46 VCC=600V,IF=450A, -di/dt=6600A/μs,VGE=-15V, Tj=25oC VCC=600V,IF=450A, -di/dt=6600A/μs,VGE=-15V, Tj=125oC VCC=600V,IF=450A, -di/dt=6600A/μs,VGE=-15V, Tj=150oC Max. 2.10 Unit V μC 428 A 25.2 mJ 87 μC 523 A 46.1 mJ 100 μC 546 A 52.3 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω Typ. 5.0 -5 R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Min. Typ. 20 1.10 Max. 0.069 0.108 0.049 0.077 0.005 K/W K/W 3.0 3.0 12/17/2016 Unit nH mΩ 6.0 6.0 910 N.m g 4/9 SF0A GD450HTY120C7S IGBT Module 900 900 750 750 600 600 IC [A] IC [A] VGE=15V 450 300 450 300 150 150 Tj=25℃ Tj=125℃ Tj=150℃ 0 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 5 Fig 1. IGBT Output Characteristics 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 140 220 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 120 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 200 180 160 100 VCC=600V RG=1.3Ω VGE=±15V 80 60 140 E [mJ] E [mJ] VCE=20V 120 100 80 40 60 VCC=600V IC=450A VGE=±15V 40 20 20 0 0 0 150 300 450 600 750 900 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 3 6 9 RG [Ω] 12 Fig 4. IGBT Switching Loss vs. RG 12/17/2016 5/9 SF0A 15 GD450HTY120C7S IGBT Module 1000 0.1 900 IGBT Module 800 700 ZthJC [K/W] IC [A] 600 500 400 0.01 300 RG=1.3Ω VGE=±15V Tj=150oC 200 100 i: 1 2 3 4 ri[K/W]: 0.0039 0.0229 0.0221 0.0201 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.001 0.001 200 400 600 800 100012001400 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 900 80 Tj=25℃ Tj=125℃ Tj=150℃ 750 Erec Tj=125℃ 70 Erec Tj=150℃ 60 600 E [mJ] IF [A] 50 450 40 30 300 20 VCC=600V RG=1.3Ω VGE=-15V 150 10 0 0 0 0.4 0.8 1.2 1.6 VF [V] 2 2.4 Fig 7. Diode Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 150 300 450 600 IF [A] 750 Fig 8. Diode Switching Loss vs. IF 12/17/2016 6/9 SF0A 900 GD450HTY120C7S IGBT Module 1 60 Erec Tj=125℃ Erec Tj=150℃ 50 Diode 0.1 ZthJC [K/W] E [mJ] 40 30 0.01 20 VCC=600V IF=450A VGE=-15V 10 i: 1 2 3 4 ri[K/W]: 0.0064 0.0356 0.0346 0.0314 τi[s]: 0.01 0.02 0.05 0.1 0 0 2 4 6 8 RG [Ω] 10 12 14 Fig 9. Diode Switching Loss vs. RG 0.001 0.001 0.01 0.1 t [s] 1 Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 10 150 Fig 11. NTC Temperature Characteristic ©2016 STARPOWER Semiconductor Ltd. 12/17/2016 7/9 SF0A GD450HTY120C7S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 12/17/2016 8/9 SF0A GD450HTY120C7S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 12/17/2016 9/9 SF0A