GD600HFY120P1S

GD600HFY120P1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD600HFY120P1S 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electric vehicle and solar power. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Isolated copper baseplate using DBC technology High power and thermal cycling capability Typical Applications    High Power Converter Solar Power Hybrid and Electric Vehicle Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 4/21/2016 1/10 SN0A GD600HFY120P1S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 951 600 1200 3.1 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1200 600 1200 Unit V A A Value 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A kW Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 4/21/2016 2/10 SN0A GD600HFY120P1S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=600A,VGE=15V, Tj=25oC IC=600A,VGE=15V, Tj=125oC IC=600A,VGE=15V, Tj=150oC IC=15.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 VCC=600V,IC=600A, RG=1.8Ω,VGE=±15V, Tj=25oC VCC=600V,IC=600A, RG=1.8Ω,VGE=±15V, Tj=125oC VCC=600V,IC=600A, RG=1.8Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. Typ. 4/21/2016 6.0 6.8 V 1.0 mA 400 nA 1.3 257 96 721 155 Ω ns ns ns ns 52.4 mJ 54.6 mJ 310 107 824 165 ns ns ns ns 65.3 mJ 75.2 mJ 332 107 876 175 ns ns ns ns 69.6 mJ 84.5 mJ 2400 A 3/10 SN0A GD600HFY120P1S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=600A,VGE=0V,Tj=25oC IF=600A,VGE=0V,Tj=125oC IF=600A,VGE=0V,Tj=150oC Min. VCC=600V,IF=600A, -di/dt=4800A/μs,VGE=-15V, Tj=25oC VCC=600V,IF=600A, -di/dt=4800A/μs,VGE=-15V, Tj=125oC VCC=600V,IF=600A, -di/dt=4800A/μs,VGE=-15V, Tj=150oC Typ. 1.65 1.65 1.65 54 Max. 2.10 Unit V μC 375 A 29.5 mJ 105 μC 428 A 42.8 mJ 119 μC 470 A 54.2 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω Max. -5 R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] ©2016 STARPOWER Semiconductor Ltd. Typ. 5.0 4/21/2016 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K 4/10 SN0A GD600HFY120P1S IGBT Module Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M5 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Min. Typ. 18 0.30 Max. 47.8 81.8 14.4 24.4 4.5 K/kW K/kW 1.8 8.0 3.0 2.1 10 6.0 825 4/21/2016 Unit nH mΩ N.m g 5/10 SN0A GD600HFY120P1S IGBT Module 1200 1200 1000 1000 800 800 IC [A] IC [A] VGE=15V 600 400 VCE=20V 600 400 200 200 Tj=25℃ Tj=125℃ Tj=150℃ 0 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 5 Fig 1. IGBT Output Characteristics 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 275 350 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 250 225 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 300 200 250 E [mJ] E [mJ] 175 150 125 200 150 100 100 75 VCC=600V RG=1.8Ω VGE=±15V 50 25 0 VCC=600V IC=600A VGE=±15V 50 0 0 200 400 600 800 1000 1200 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 3 6 9 12 RG [Ω] 15 Fig 4. IGBT Switching Loss vs. RG 4/21/2016 6/10 SN0A 18 GD600HFY120P1S IGBT Module 100 1400 Module IGBT 1200 ZthJC [K/kW] IC [A] 1000 800 600 10 400 RG=1.8Ω VGE=±15V Tj=150oC 200 i: 1 2 3 ri[K/kW]: 1.7 9.9 32.4 0.0008 0.013 0.05 τi[s]: 0 0 1 0.001 200 400 600 800 100012001400 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 4 3.8 0.6 1 10 Fig 6. IGBT Transient Thermal Impedance 1200 70 Tj=25℃ Tj=125℃ Tj=150℃ 1000 Erec Tj=125℃ 60 Erec Tj=150℃ 50 E [mJ] IF [A] 800 600 40 30 400 20 200 VCC=600V RG=1.8Ω VGE=-15V 10 0 0 0 0.4 0.8 1.2 1.6 VF [V] 2 2.4 Fig 7. Diode Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 200 400 600 800 1000 1200 IF [A] Fig 8. Diode Switching Loss vs. IF 4/21/2016 7/10 SN0A GD600HFY120P1S IGBT Module 100 60 Erec Tj=125℃ Diode Erec Tj=150℃ 50 ZthJC [K/kW] E [mJ] 40 30 10 20 VCC=600V IF=600A VGE=-15V 10 i: 1 2 3 ri[K/kW]: 6.8 19.2 54.2 0.0008 0.013 0.05 τi[s]: 0 0 3 6 9 12 RG [Ω] 15 18 Fig 9. Diode Switching Loss vs. RG 1 0.001 0.01 0.1 t [s] 1 R [kΩ] 10 1 0.1 30 60 90 o TC [ C] 120 10 Fig 10. Diode Transient Thermal Impedance 100 0 4 1.6 0.6 150 Fig 11. NTC Temperature Characteristic ©2016 STARPOWER Semiconductor Ltd. 4/21/2016 8/10 SN0A GD600HFY120P1S IGBT Module Circuit Schematic 9 5 6 4 3 8 7 1 2 10 Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 4/21/2016 9/10 SN0A GD600HFY120P1S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 4/21/2016 10/10 SN0A