DG75X07T2L

DG75X07T2L IGBT Discrete DOSEMI IGBT DG75X07T2L 650V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features         Low VCE(sat) Trench IGBT technology 6μs short circuit capability Low switching loss Maximum junction temperature 175oC Low inductance case VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2021 STARPOWER Semiconductor Ltd. 6/18/2021 1/9 B01 DG75X07T2L IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp limited by Tjmax Maximum Power Dissipation @ Tj=175oC Value 650 ±20 ±25 90(1) 75 300 428 Unit V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current @ TC=25oC @ TC=75oC Diode Maximum Forward Current tp limited by Tjmax Value 650 90(1) 75 300 Unit V Values -40 to +175 -55 to +150 260 0.6 Unit o C o C o C N.m 2/9 B01 V A A W Diode Symbol VRRM IF IFM A A Discrete Symbol Tjop TSTG TS M Description Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s Mounting Torque, Screw M3 (1) Value limited by bondwire ©2021 STARPOWER Semiconductor Ltd. 6/18/2021 DG75X07T2L IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=75A,VGE=15V, Tj=25oC IC=75A,VGE=15V, Tj=125oC IC=75A,VGE=15V, Tj=150oC IC=1.20mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.50 1.95 1.60 Unit V 1.70 5.1 VCE=25V,f=100kHz, VGE=0V VGE=-15…+15V VCC=300V,IC=75A, RG=7.5Ω,VGE=±15V, LS=40nH,Tj=25oC VCC=300V,IC=75A, RG=7.5Ω,VGE=±15V, LS=40nH,Tj=150oC VCC=300V,IC=75A, RG=7.5Ω,VGE=±15V, LS=40nH,Tj=175oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2021 STARPOWER Semiconductor Ltd. Typ. 6/18/2021 5.8 6.5 V 40 μA 100 nA 0 8.69 Ω nF 0.17 nF 0.52 106 156 182 119 μC ns ns ns ns 3.94 mJ 1.29 mJ 110 152 189 166 ns ns ns ns 4.4 mJ 1.62 mJ 113 151 217 152 ns ns ns ns 4.82 mJ 1.77 mJ 375 A 3/9 B01 DG75X07T2L IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF trr Qr IRM Erec trr Qr IRM Erec trr Qr IRM Erec Parameter Diode Forward Voltage Diode Reverse Recovery Time Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Diode Reverse Recovery Time Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Diode Reverse Recovery Time Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=75A,VGE=0V,Tj=25oC IF=75A,VGE=0V,Tj=125oC IF=75A,VGE=0V,Tj=150oC Min. Typ. 1.60 1.65 1.70 VR=300V,IF=75A, -di/dt=350A/μs,VGE=-15V LS=40nH,Tj=25oC VR=300V,IF=75A, -di/dt=348A/μs,VGE=-15V LS=40nH,Tj=150oC VR=300V,IF=75A, -di/dt=335A/μs,VGE=-15V LS=40nH,Tj=175oC Max. 2.05 Unit V 168 ns 1.29 μC 12.4 A 0.19 mJ 224 ns 2.55 μC 17.4 A 0.41 mJ 251 ns 3.36 μC 21.4 A 0.54 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RthJC RthJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2021 STARPOWER Semiconductor Ltd. Min. Typ. Max. 0.350 0.600 40 6/18/2021 Unit K/W K/W 4/9 B01 DG75X07T2L IGBT Discrete 150 150 125 125 100 100 IC [A] IC [A] VGE=15V 75 50 VCE=20V 75 50 25 25 Tj=25℃ Tj=125℃ Tj=150℃ 0 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0.5 1 1.5 2 VCE [V] 2.5 3 Fig 1. IGBT-inverter Output Characteristics 20 5 10 11 12 Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ 10 8 E [mJ] E [mJ] 8 9 VGE [V] 12 VCC=300V RG=7.5Ω VGE=±15V 12 7 Fig 2. IGBT-inverter Transfer Characteristics Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ 16 6 6 8 VCC=300V IC=75A VGE=±15V 4 4 2 0 0 0 25 50 75 100 IC [A] 125 150 Fig 3. IGBT-inverter Switching Loss vs. IC ©2021 STARPOWER Semiconductor Ltd. 0 15 30 45 RG [Ω] 60 75 Fig 4. IGBT-inverter Switching Loss vs. RG 6/18/2021 5/9 B01 DG75X07T2L IGBT Discrete 350 300 0.1 single pulse ZthJC [K/W] IC [A] 250 200 150 0.01 D=0.01 D=0.02 D=0.05 D=0.1 100 0.001 D=0.2 RG=7.5Ω VGE=±15V Tj=175oC 50 D=0.5 i: 1 2 3 4 ri[K/W]: 0.1968 0.0733 0.0509 0.0290 τi[s]: 0.1155 0.0093 0.0008 0.0001 0 0 200 400 VCE [V] 600 0.0001 0.000001 800 0.0001 0.01 1 t [s] Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance 150 0.8 Tj=25℃ Tj=125℃ Tj=150℃ 125 Erec Tj=150℃ Erec Tj=175℃ 0.6 E [mJ] IF [A] 100 75 0.4 50 0.2 VCC=300V RG=7.5Ω VGE=-15V 25 0 0 0 0.5 1 1.5 VF [V] 2 2.5 Fig 7. Diode-inverter Forward Characteristics ©2021 STARPOWER Semiconductor Ltd. 0 25 50 75 100 IF [A] 125 150 Fig 8. Diode-inverter Switching Loss vs. IF 6/18/2021 6/9 B01 DG75X07T2L IGBT Discrete 0.6 Erec Tj=150℃ Erec Tj=175℃ 0.5 0.1 ZthJC [K/W] E [mJ] 0.4 0.3 single pulse D=0.01 D=0.02 D=0.05 0.01 0.2 D=0.1 D=0.2 VCC=300V IF=75A VGE=-15V 0.1 D=0.5 i: 1 2 3 4 5 ri[K/W]: 0.1844 0.1679 0.1260 0.0817 0.0400 τi[s]: 0.1104 0.0155 0.0012 0.0001 0.000008 0 0 15 30 45 RG [Ω] 60 75 Fig 9. Diode-inverter Switching Loss vs. RG ©2021 STARPOWER Semiconductor Ltd. 0.001 0.000001 0.0001 0.01 1 t [s] Fig 10. Diode-inverter Transient Thermal Impedance 6/18/2021 7/9 B01 DG75X07T2L IGBT Discrete Circuit Schematic 2 1 3 Package Dimensions Dimensions in Millimeters ©2021 STARPOWER Semiconductor Ltd. 6/18/2021 8/9 B01 DG75X07T2L IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2021 STARPOWER Semiconductor Ltd. 6/18/2021 9/9 B01