GD400SGU120C2S

GD400SGU120C2S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD400SGU120C2S 1200V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features        NPT IGBT technology 10μs short circuit capability Low switching losses VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Switching mode power supply Inductive heating Electronic welder Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 11/30/2016 1/9 DX0A GD400SGU120C2S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=70oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=150oC Value 1200 ±20 549 400 800 2659 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1200 400 800 Unit V A A Value 150 -40 to +125 -40 to +125 2500 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 11/30/2016 2/9 DX0A GD400SGU120C2S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=400A,VGE=15V, Tj=25oC IC=400A,VGE=15V, Tj=125oC IC=16.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 2.90 3.35 Unit V 3.60 4.5 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=400A, RG=2.2Ω,VGE=±15V, Tj=25oC VCC=600V,IC=400A, RG=2.2Ω,VGE=±15V, Tj=125oC tP≤10μs,VGE=15V, Tj=125oC,VCC=900V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. Typ. 11/30/2016 5.5 6.5 V 5.0 mA 400 nA 0.6 26.0 Ω nF 1.70 nF 4.2 76 57 529 73 μC ns ns ns ns 5.2 mJ 23.2 mJ 81 62 567 81 ns ns ns ns 9.9 mJ 31.7 mJ 2800 A 3/9 DX0A GD400SGU120C2S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=400A,VGE=0V,Tj=25oC IF=400A,VGE=0V,Tj=125oC Min. Typ. 1.96 1.98 24.9 VR=600V,IF=400A, -di/dt=6000A/μs,VGE=-15V Tj=25oC VR=600V,IF=400A, -di/dt=6000A/μs,VGE=-15V Tj=125oC Max. 2.31 Unit V μC 317 A 16.0 mJ 35.5 μC 391 A 21.4 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Min. Typ. Max. 20 0.18 0.047 0.100 0.015 0.031 0.010 K/W K/W 2.5 3.0 11/30/2016 Unit nH mΩ 5.0 5.0 300 N.m g 4/9 DX0A GD400SGU120C2S IGBT Module 800 800 VGE=15V 700 600 600 500 500 25oC IC [A] IC [A] VCE=20V 700 400 125oC 300 400 125oC 300 200 200 100 100 0 25oC 0 0 1 2 3 4 5 6 6 7 8 9 VGE [V] VCE [V] Fig 1. IGBT Output Characteristics 10 11 Fig 2. IGBT Transfer Characteristics 200 80 VCC=600V RG=2.2Ω VGE=±15V Tj=125oC 60 VCC=600V IC=400A VGE=±15V Tj=125oC 160 40 E [mJ] E [mJ] 120 Eon Eon 80 20 40 Eoff Eoff 0 0 0 200 400 IC [A] 600 800 Fig 3. IGBT Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 3 6 9 12 15 18 21 24 RG [Ω] Fig 4. IGBT Switching Loss vs. RG 11/30/2016 5/9 DX0A GD400SGU120C2S IGBT Module 0.1 1000 IGBT Module 800 IC [A] ZthJC [K/W] 600 400 0.01 RG=2.2Ω VGE=±15V Tj=125oC 200 i: 1 2 3 4 ri[K/W]: 0.0029 0.0154 0.0150 0.0137 τi[s]: 0.01 0.02 0.05 0.1 0 0 350 700 1050 VCE [V] 0.001 0.001 1400 Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 800 24 700 20 600 E [mJ] IF [A] Erec 16 500 400 300 12 8 125oC VCC=600V RG=2.2Ω VGE=-15V Tj=125oC 200 25oC 4 100 0 0 0 0.5 1 1.5 2 VF [V] 2.5 3 Fig 7. Diode Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 200 400 IF [A] 600 Fig 8. Diode Switching Loss vs. IF 11/30/2016 6/9 DX0A 800 GD400SGU120C2S IGBT Module 1 24 20 Diode 0.1 E [mJ] Erec 12 ZthJC [K/W] 16 0.01 8 VCC=600V IF=400A VGE=-15V Tj=125oC 4 i: 1 2 3 4 ri[K/W]: 0.0061 0.0330 0.0319 0.0290 τi[s]: 0.01 0.02 0.05 0.1 0 0 3 6 9 12 15 18 21 24 RG [Ω] Fig 9. Diode Switching Loss vs. RG ©2016 STARPOWER Semiconductor Ltd. 0.001 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 11/30/2016 7/9 DX0A GD400SGU120C2S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 11/30/2016 8/9 DX0A GD400SGU120C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 11/30/2016 9/9 DX0A