GD450HFX65C6S

GD450HFX65C6S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD450HFX65C6S 650V/450A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as inverters and UPS. Features        Low VCE(sat) Trench IGBT technology VCE(sat) with positive temperature coefficient 6μs short circuit capability Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2018 TARPOWER Semiconductor Ltd. 5/9/2018 1/10 Preliminary GD450HFX65C6S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=55oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Values 650 ±20 536 450 900 1190 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 650 450 900 Unit V A A Values 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2018 TARPOWER Semiconductor Ltd. 5/9/2018 2/10 Preliminary GD450HFX65C6S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=450A,VGE=15V, Tj=25oC IC=450A,VGE=15V, Tj=125oC IC=450A,VGE=15V, Tj=150oC IC=7.20mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=450A, RG=1.5Ω,VGE=±15V, Tj=25oC VCC=300V,IC=450A, RG=1.5Ω,VGE=±15V, Tj=125oC VCC=300V,IC=450A, RG=1.5Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2018 TARPOWER Semiconductor Ltd. 5/9/2018 Min. Typ. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 0.67 52.2 Ω nF 1.03 nF 3.12 75 65 376 56 μC ns ns ns ns 4.95 mJ 12.0 mJ 80 70 400 76 ns ns ns ns 6.30 mJ 14.0 mJ 85 75 400 80 ns ns ns ns 6.90 mJ 14.8 mJ 2250 A 3/10 Preliminary GD450HFX65C6S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IC=450A,VGE=0V,Tj=25oC IC=450A,VGE=0V,Tj=125oC IC=450A,VGE=0V,Tj=150oC Min. VR=300V,IF=450A, -di/dt=5900A/μs,VGE=-15V Tj=25oC VR=300V,IF=450A, -di/dt=5900A/μs,VGE=-15V Tj=125oC VR=300V,IF=450A, -di/dt=5900A/μs,VGE=-15V Tj=150oC Typ. 1.55 1.50 1.45 Max. 2.00 Unit V 16.5 μC 230 A 3.75 mJ 30.0 μC 290 A 7.50 mJ 35.0 μC 310 A 9.00 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions TC=100oC,R100=493.3Ω R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] ©2018 TARPOWER Semiconductor Ltd. 5/9/2018 Min. Typ. 5.0 -5 Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K 4/10 Preliminary GD450HFX65C6S IGBT Module Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 Weight of Module ©2018 TARPOWER Semiconductor Ltd. Min. Typ. 20 1.10 Max. 0.116 0.217 0.028 0.052 0.009 3.0 3.0 5/9/2018 Unit nH mΩ K/W K/W 6.0 6.0 N.m 350 g 5/10 Preliminary GD450HFX65C6S IGBT Module 900 900 750 750 600 600 IC [A] IC [A] VGE=15V 450 300 450 300 Tj=25℃ Tj=125℃ Tj=150℃ 150 150 0 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCE [V] 5 Fig 1. IGBT Output Characteristics 6 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT Transfer Characteristics 120 40 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 30 VCC=300V IC=450A VGE=±15V 80 VCC=300V RG=1.5Ω VGE=±15V 20 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 100 E [mJ] E [mJ] VCE=20V 60 40 10 20 0 0 0 150 300 450 600 IC [A] 750 900 Fig 3. IGBT Switching Loss vs. IC ©2018 TARPOWER Semiconductor Ltd. 0 2 4 6 8 10 12 14 16 RG [Ω] Fig 4. IGBT Switching Loss vs. RG 5/9/2018 6/10 Preliminary GD450HFX65C6S IGBT Module 1 1000 900 Module 800 IGBT 700 0.1 ZthJC [K/W] IC [A] 600 500 400 0.01 300 RG=1.5Ω VGE=±15V Tj=150oC 200 100 i: 1 2 3 4 ri[K/W]: 0.0069 0.0383 0.0372 0.0336 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.001 0.001 100 200 300 400 500 600 700 VCE [V] Fig 5. RBSOA 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 900 14.0 Tj=25℃ Tj=125℃ Tj=150℃ 750 Erec Tj=125℃ Erec Tj=150℃ 12.0 10.0 E [mJ] 600 IF [A] 0.01 450 8.0 6.0 300 4.0 150 VCC=300V RG=1.5Ω VGE=-15V 2.0 0 0.0 0 0.5 1 VF [V] 1.5 2 Fig 7. Diode Forward Characteristics ©2018 TARPOWER Semiconductor Ltd. 0 150 300 450 600 750 900 IF [A] Fig 8. Diode Switching Loss vs. IF 5/9/2018 7/10 Preliminary GD450HFX65C6S IGBT Module 1 10 Erec Tj=125℃ Erec Tj=150℃ Diode 8 0.1 E [mJ] ZthJC [K/W] 6 4 0.01 2 VCC=300V IF=450A VGE=-15V i: 1 2 3 4 ri[K/W]: 0.0131 0.0718 0.0692 0.0629 0.01 0.02 0.05 0.1 τi[s]: 0 0 2 4 6 8 10 12 14 16 RG [Ω] Fig 9. Diode Switching Loss vs. RG 0.001 0.001 0.01 0.1 t [s] 1 Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 10 150 Fig 11. NTC Temperature Characteristic ©2018 TARPOWER Semiconductor Ltd. 5/9/2018 8/10 Preliminary GD450HFX65C6S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters 9 8 6 7 5 4 10 11 3 1 2 A B ©2018 TARPOWER Semiconductor Ltd. 5/9/2018 9/10 Preliminary GD450HFX65C6S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2018 TARPOWER Semiconductor Ltd. 5/9/2018 10/10 Preliminary