GD50HFU120C1S

GD50HFU120C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD50HFU120C1S Molding Type Module 1200V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. Features         NPT IGBT technology 10μs short circuit capability Low switching losses Rugged with ultrafast performance VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications    Switching mode power supplies Inductive heating Electronic welder ©2011 STARPOWER Semiconductor Ltd. 11/8/2011 1/9 Rev.C GD50HFU120C1S IGBT Module Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol VCES VGES IC ICM IF IFM PD Tjmax TSTG VISO Mounting Torque Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=80℃ Pulsed Collector Current tp=1ms Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Maximum Power Dissipation @ Tj=150℃ Maximum Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Power Terminal Screw:M5 Mounting Screw:M6 GD50HFU120C1S 1200 ±20 78 50 100 50 100 414 150 -40 to +125 2500 2.5 to 5.0 3.0 to 5.0 Units V V A A A A W ℃ ℃ V N.m Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol V(BR)CES ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Test Conditions Min. Typ. Max. 1200 Tj=25℃ Units V VCE=VCES,VGE=0V, Tj=25℃ VGE=VGES,VCE=0V, Tj=25℃ 5.0 mA 400 nA On Characteristics Symbol VGE(th) VCE(sat) Parameter Gate-Emitter Threshold Vol tage Collector to Emitter Saturation Voltage Test Conditions IC=0.5mA,VCE=VGE, Tj=25℃ IC=50A,VGE=15V, Tj=25℃ IC=50A,VGE=15V, Tj=125℃ ©2011 STARPOWER Semiconductor Ltd. Min. Typ. Max. Units 4.4 5.2 6.0 V 3.15 3.60 11/8/2011 V 3.50 2/9 Rev.C GD50HFU120C1S IGBT Module Switching Characteristics Symbol td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance ISC SC Data LCE Stray Inductance Module Lead Resistance, Terminal To Chip RCC’+EE’ Test Conditions Min. VCC=600V,IC=50A, RG=13Ω,VGE=±15V, Tj=25℃ VCC=600V,IC=50A, RG=13Ω,VGE=±15V, Tj=125℃ VCE=30V,f=1MHz, VGE=0V tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V Typ. 262 52 272 116 Max. Units ns ns ns ns 4.69 mJ 1.89 mJ 276 53 290 146 ns ns ns ns 5.92 mJ 2.69 mJ 4.23 0.38 nF nF 0.15 nF 450 A 30 nH mΩ 0.75 Electrical Characteristics of Diode TC=25℃ unless otherwise noted Symbol VF Qr IRM Erec Parameter Diode Forward Vol tage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions Tj=25℃ IF=50A Tj=125℃ Tj=25℃ Tj=125℃ IF=50A, Tj=25℃ VR=600V, RG=13Ω, Tj=125℃ VGE=-15V Tj=25℃ Tj=125℃ ©2011 STARPOWER Semiconductor Ltd. Min. 11/8/2011 Typ. 1.82 1.95 4.3 8.4 49 59 2.12 3.64 3/9 Max. 2.25 Units V μC A mJ Rev.C GD50HFU120C1S IGBT Module Thermal Characteristics Symbol RθJC RθJC RθCS G Parameter Junction-to-Case (per IGBT) Junction-to-Case (per diode) Case-to-Sink (Conductive grease applied) Weight of Module ©2011 STARPOWER Semiconductor Ltd. Typ. Max. 0.310 0.524 0.05 150 11/8/2011 4/9 Units K/W K/W K/W g Rev.C GD50HFU120C1S IGBT Module 100 100 VGE=15V 90 80 80 70 70 25℃ 60 IC [A] 60 IC [A] VCE=20V 90 50 40 125℃ 50 25℃ 40 125℃ 30 30 20 20 10 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5 6 7 8 VCE [V] 9 10 11 VGE [V] Fig 1. IGBT Output Characteristic Fig 2. IGBT Transfer Characteristic 18 25 VCC=600V RG=13Ω VGE=±15V Tj=125℃ 16 14 VCC=600V IC=50A VGE=±15V Tj=125℃ 20 15 10 E [mJ] E [mJ] 12 EON 8 EON 10 6 4 5 2 EOFF EOFF 0 0 0 20 40 60 80 100 0 20 ©2011 STARPOWER Semiconductor Ltd. 60 80 100 120 140 RG [Ω] IC [A] Fig 3. IGBT Switching Loss vs. IC 40 Fig 4. IGBT Switching Loss vs. RG 11/8/2011 5/9 Rev.C GD50HFU120C1S IGBT Module 120 1 IGBT Module 100 0.1 ZthJC [K/W] IC [A] 80 60 40 0.01 RG=13Ω VGE=±15V Tj=125℃ 20 i: 1 2 3 4 ri[K/W]: 0.0186 0.1023 0.0992 0.0899 0.01 0.02 0.05 0.1 τi[s]: 0 0 350 700 1050 0.001 0.001 1400 0.01 0.1 VCE [V] 1 10 t [s] Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance 100 6 90 5 80 70 4 50 E [mJ] IF [A] EREC 25℃ 60 125℃ 3 40 2 30 20 VCC=600V RG=13Ω VGE=-15V Tj=125℃ 1 10 0 0 0 0.5 1 1.5 2 2.5 3 0 20 VF [V] Fig 7. Diode Forward Characteristic ©2011 STARPOWER Semiconductor Ltd. 40 60 80 IF [A] Fig 8. Diode Switching Loss vs. IF 11/8/2011 6/9 Rev.C 100 GD50HFU120C1S IGBT Module 4 1 VCC=600V IF=50A VGE=-15V Tj=125℃ 3.5 Diode EREC 2.5 ZthJC [K/W] E [mJ] 3 0.1 2 1.5 i: 1 2 3 4 ri[K/W]: 0.0314 0.1729 0.1677 0.1520 0.01 0.02 0.05 0.1 τi[s]: 1 0 20 40 60 80 100 120 140 0.01 0.001 0.01 RG [Ω] Fig 9. Diode Switching Loss vs. RG ©2011 STARPOWER Semiconductor Ltd. 0.1 1 10 t [s] Fig 10. Diode Transient Thermal Impedance 11/8/2011 7/9 Rev.C GD50HFU120C1S IGBT Module Package Dimension Dimensions in Millimeters ©2011 STARPOWER Semiconductor Ltd. 11/8/2011 8/9 Rev.C GD50HFU120C1S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2011 STARPOWER Semiconductor Ltd. 11/8/2011 9/9 Rev.C