GD80TLQ120F1S

GD80TLQ120F1S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD80TLQ120F1S 1200V/80A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as solar power. Features        Low VCE(sat) Trench IGBT technology Low switching loss VCE(sat) with positive temperature coefficient High short circuit capability Maximum junction temperature 175oC Fast & soft reverse recovery anti-parallel FWD Isolated heatsink using DBC technology Typical Applications    Solar power UPS 3-level-application Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 1/14 preliminary GD80TLQ120F1S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted T1,T2 IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=90oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 110 80 160 450 Unit V V Value 1200 50 100 Unit V A A Value 600 ±20 93 75 150 231 Unit V V Value 600 60 120 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W D1,D2 Diode Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms T3,T4 IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=65oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC A A W D3,D4 Diode Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 2/14 preliminary GD80TLQ120F1S IGBT Module T1,T2 IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=80A,VGE=15V, Tj=25oC IC=80A,VGE=15V, Tj=125oC IC=80A,VGE=15V, Tj=150oC IC=2.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=350V,IC=56A, RG=4.0Ω,VGE=±15V, Tj=25oC VCC=350V,IC=56A, RG=4.0Ω,VGE=±15V, Tj=125oC VCC=350V,IC=56A, RG=4.0Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤1200V ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 Min. Typ. Max. 1.95 2.40 2.25 Unit V 2.30 5.2 6.0 6.8 V 1.0 mA 400 nA TBD TBD Ω nF TBD nF TBD 68 11 181 53 μC ns ns ns ns 0.41 mJ 1.41 mJ 69 14 226 65 ns ns ns ns 0.72 mJ 1.95 mJ 70 14 236 69 ns ns ns ns 0.86 mJ 2.35 mJ 375 A 3/14 preliminary GD80TLQ120F1S IGBT Module D1,D2 Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=50A,VGE=0V,Tj=25oC IF=50A,VGE=0V,Tj=125oC IF=50A,VGE=0V,Tj=150oC VR=350V,IF=56A, -di/dt=5000A/μs,VGE=-15V Tj=25oC VR=350V,IF=56A, -di/dt=5000A/μs,VGE=-15V Tj=125oC VR=350V,IF=56A, -di/dt=5000A/μs,VGE=-15V Tj=150oC ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 Min. Typ. 1.75 1.65 1.65 Max. 2.20 Unit V 5.2 μC 105 A 1.50 mJ 7.0 μC 114 A 2.10 mJ 8.1 μC 118 A 2.40 mJ 4/14 preliminary GD80TLQ120F1S IGBT Module T3,T4 IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=75A,VGE=15V, Tj=25oC IC=75A,VGE=15V, Tj=125oC IC=75A,VGE=15V, Tj=150oC IC=1.2mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=350V,IC=56A, RG=4.0Ω,VGE=±15V, Tj=25oC VCC=350V,IC=56A, RG=4.0Ω,VGE=±15V, Tj=125oC VCC=350V,IC=56A, RG=4.0Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=350V, VCEM≤600V ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 Min. Typ. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 5.8 6.4 V 1.0 mA 400 nA / 4.62 Ω nF 0.14 nF 0.80 84 10 180 87 μC ns ns ns ns 0.53 mJ 1.86 mJ 85 11 200 100 ns ns ns ns 0.66 mJ 2.20 mJ 86 12 208 105 ns ns ns ns 0.75 mJ 2.50 mJ 380 A 5/14 preliminary GD80TLQ120F1S IGBT Module D3,D4 Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=60A,VGE=0V,Tj=25oC IF=60A,VGE=0V,Tj=125oC IF=60A,VGE=0V,Tj=150oC Min. Typ. 1.50 1.40 1.40 VR=350V,IF=56A, -di/dt=4000A/μs,VGE=-15V Tj=25oC VR=350V,IF=56A, -di/dt=4000A/μs,VGE=-15V Tj=125oC VR=350V,IF=56A, -di/dt=4000A/μs,VGE=-15V Tj=150oC Max. 1.95 Unit V 1.4 μC 38 A 0.20 mJ 2.7 μC 45 A 0.50 mJ 3.1 μC 50 A 0.60 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value Test Conditions Min. TC=100oC,R100=1486.1Ω Typ. 22.0 -5 Max. 5 200 R2=R25exp[B25/50(1/T21/(298.15K))] 4000 Unit kΩ % mW K Module Characteristics TC=25oC unless otherwise noted Symbol RthJC RthCH M G Parameter Junction-to-Case (per T1,T2 IGBT) Junction-to-Case (per D1,D2 Diode) Junction-to-Case (per T3,T4 IGBT) Junction-to-Case (per D3,D4 Diode) Case-to-Heatsink (per T1,T2 IGBT) Case-to-Heatsink (per D1,D2 Diode) Case-to-Heatsink (per T3,T4 IGBT) Case-to-Heatsink (per D3,D4 Diode) Case-to-Heatsink (per Module) Mounting Torque, Screw M4 Weight of Module ©2018 STARPOWER Semiconductor Ltd. Min. Typ. 0.303 0.764 0.590 0.860 0.158 0.399 0.309 0.450 0.035 2.0 6/14 Unit K/W K/W 2.2 26 9/13/2018 Max. 0.333 0.840 0.649 0.946 N.m g preliminary GD80TLQ120F1S IGBT Module 160 160 VGE=15V 140 120 120 25oC 80 25oC 100 IC [A] 100 IC [A] VCE=20V 140 150oC 150oC 80 60 60 40 40 20 20 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 4 5 Fig 1. T1,T2 IGBT Output Characteristics 6 7 8 9 10 11 12 13 14 VGE [V] Fig 2. T1,T2 IGBT Transfer Characteristics 4 5 VCC=350V RG=4.0Ω VGE=±15V Tj=150oC 4 VCC=350V IC=56A VGE=±15V Tj=150oC 3.5 3 Eon 2.5 E [mJ] E [mJ] 3 Eoff 2 2 Eoff 1.5 1 1 Eon 0 0.5 0 0 20 40 60 80 100 120 140 160 IC [A] Fig 3. T1,T2 IGBT Switching Loss vs. IC ©2018 STARPOWER Semiconductor Ltd. 0 5 10 15 20 25 30 35 40 RG [Ω] Fig 4. T1,T2 IGBT Switching Loss vs. RG 9/13/2018 7/14 preliminary GD80TLQ120F1S IGBT Module 180 1 Module 160 IGBT 140 ZthJH [K/W] IC [A] 120 100 80 0.1 60 RG=4.0Ω VGE=±15V Tj=150oC 40 20 i: 1 2 3 4 ri[K/W]: 0.0316 0.0616 0.1887 0.1791 0.0005 0.005 0.05 0.2 τi[s]: 0 0 350 700 VCE [V] 1050 0.01 0.001 1400 Fig 5. T1,T2 RBSOA 4.5 140 4 10 Erec 3 25oC 150oC 60 E [mJ] IF [A] 1 3.5 120 80 0.1 t [s] Fig 6. T1,T2 IGBT Transient Thermal Impedance 160 100 0.01 2.5 2 1.5 40 VCC=350V RG=4.0Ω VGE=-15V Tj=150oC 1 20 0.5 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 VF [V] Fig 7. D1,D2 Diode Forward Characteristics ©2018 STARPOWER Semiconductor Ltd. 0 20 40 60 80 100 120 140 160 IF [A] Fig 8. D1,D2 Diode Switching Loss vs. IF 9/13/2018 8/14 preliminary GD80TLQ120F1S IGBT Module 10 2.5 2.4 Erec E [mJ] ZthJH [K/W] 2.3 2.2 Diode 1 VCC=350V IF=56A VGE=-15V Tj=150oC 2.1 i: 1 2 3 4 ri[K/W]: 0.0797 0.1553 0.4760 0.4520 0.0005 0.005 0.05 0.2 τi[s]: 2 0 5 0.1 0.001 10 15 20 25 30 35 40 RG [Ω] Fig 9. D1,D2 Diode Switching Loss vs. RG 0.01 0.1 t [s] 1 10 Fig 10. D1,D2 Diode Transient Thermal Impedance 150 150 VGE=15V 125 100 100 25oC 75 IC [A] IC [A] VCE=20V 125 150oC 75 150oC 50 50 25 25 0 25oC 0 0 0.5 1 1.5 2 VCE [V] 2.5 3 Fig 11. T3,T4 IGBT Output Characteristics ©2018 STARPOWER Semiconductor Ltd. 6 7 8 9 10 VGE [V] 11 12 Fig 12. T3,T4 IGBT Transfer Characteristics 9/13/2018 9/14 preliminary GD80TLQ120F1S IGBT Module 4.5 5 VCC=350V RG=4.0Ω VGE=±15V Tj=150oC 4 3.5 VCC=350V IC=56A VGE=±15V Tj=150oC 4.5 4 3.5 3 Eon E [mJ] E [mJ] 3 2.5 Eoff 2 2.5 Eoff 2 1.5 1.5 1 1 Eon 0.5 0.5 0 0 0 25 50 75 100 IC [A] 125 150 0 Fig 13. T3,T4 IGBT Switching Loss vs. IC 5 10 15 20 25 30 35 40 RG [Ω] Fig 14. T3,T4 IGBT Switching Loss vs. RG 160 1 140 IGBT Module 120 ZthJH [K/W] IC [A] 100 80 60 0.1 RG=4.0Ω VGE=±15V Tj=150oC 40 20 0 0 100 200 300 400 500 600 700 VCE [V] Fig 15. T3,T4 RBSOA ©2018 STARPOWER Semiconductor Ltd. i: 1 2 3 4 ri[K/W]: 0.0616 0.1200 0.3681 0.3493 τi[s]: 0.0005 0.005 0.05 0.2 0.01 0.001 0.01 0.1 t [s] 1 10 Fig 16. T3,T4 IGBT Transient Thermal Impedance 9/13/2018 10/14 preliminary GD80TLQ120F1S IGBT Module 1 150 125 VCC=350V RG=4.0Ω VGE=-15V Tj=150oC 0.8 100 E [mJ] IF [A] 0.6 150oC 75 Erec 0.4 25oC 50 0.2 25 0 0 0 0.5 1 VF [V] 1.5 0 2 Fig 17. D3,D4 Diode Forward Characteristics 25 50 75 100 IF [A] 125 150 Fig 18. D3,D4 Diode Switching Loss vs. IF 10 0.7 0.6 Diode Erec 0.5 ZthJH [K/W] E [mJ] 1 0.4 0.3 VCC=350V IF=56A VGE=-15V Tj=150oC 0.2 0.1 0 0 5 10 15 20 25 30 35 40 RG [Ω] Fig 19. D3,D4 Diode Switching Loss vs. RG ©2018 STARPOWER Semiconductor Ltd. 0.1 i: 1 2 3 4 ri[K/W]: 0.0899 0.1749 0.5363 0.5089 τi[s]: 0.0005 0.005 0.05 0.2 0.01 0.001 0.01 0.1 t [s] 1 10 Fig 20. D3,D4 Diode Transient Thermal Impedance 9/13/2018 11/14 preliminary GD80TLQ120F1S IGBT Module 100 R [kΩ] 10 1 0.1 0 30 60 90 TC [oC] 120 150 Fig 21. NTC Temperature Characteristic ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 12/14 preliminary GD80TLQ120F1S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 13/14 preliminary GD80TLQ120F1S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2018 STARPOWER Semiconductor Ltd. 9/13/2018 14/14 preliminary