DG30X07T2

DG30X07T2 IGBT Discrete DOSEMI IGBT DG30X07T2 650V/30A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Fast IGBT technology 6μs short circuit capability Low switching loss Maximum junction temperature 175oC VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2021 STARPOWER Semiconductor Ltd. 2/15/2021 1/9 B01 DG30X07T2 IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=125oC Pulsed Collector Current tp limited by Tjmax Maximum Power Dissipation @ Tj=175oC Values 650 ±20 60 30 90 208 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp limited by Tjmax Values 650 30 90 Unit V A A Values -40 to +175 -55 to +150 260 0.6 Unit o C o C o C N.m A A W Diode Symbol VRRM IF IFM Discrete Symbol Tjop TSTG TS M Description Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s Mounting Torque, Screw M3 ©2021 STARPOWER Semiconductor Ltd. 2/15/2021 2/9 B01 DG30X07T2 IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=30A,VGE=15V, Tj=25oC IC=30A,VGE=15V, Tj=150oC IC=30A,VGE=15V, Tj=175oC IC=0.48mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.50 1.95 1.80 Unit V 1.80 5.1 VCE=25V,f=100kHz, VGE=0V VGE=-15…+15V VCC=400V,IC=30A, RG=15Ω,VGE=±15V, Tj=25oC VCC=400V,IC=30A, RG=15Ω,VGE=±15V, Tj=150oC VCC=400V,IC=30A, RG=15Ω,VGE=±15V, Tj=175oC tP≤6μs,VGE=15V, Tj=150 oC,VCC=400V, VCEM≤650V ©2021 STARPOWER Semiconductor Ltd. Typ. 2/15/2021 5.8 6.5 V 100 uA 100 nA 0 3.35 Ω nF 0.08 nF 0.22 34 70 108 145 uC ns ns ns ns 1.34 mJ 0.65 mJ 31 68 108 193 ns ns ns ns 1.48 mJ 0.83 mJ 32 68 113 193 ns ns ns ns 1.67 mJ 0.86 mJ 200 A 3/9 B01 DG30X07T2 IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=30A,VGE=0V,Tj=25oC IF=30A,VGE=0V,Tj=150oC IF=30A,VGE=0V,Tj=175oC Min. Typ. 1.70 1.70 1.65 0.60 VR=400V,IF=30A, -di/dt=317A/μs,VGE=-15V Tj=25oC VR=400V,IF=30A, -di/dt=315A/μs,VGE=-15V Tj=150oC VR=400V,IF=30A, -di/dt=311A/μs,VGE=-15V Tj=175oC Max. 2.15 Unit V μC 7.20 A 0.12 mJ 1.15 μC 9.90 A 0.25 mJ 1.39 μC 11.4 A 0.30 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RthJC RthJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2021 STARPOWER Semiconductor Ltd. Min. Typ. Max. 0.720 1.050 40 2/15/2021 Unit K/W K/W 4/9 B01 DG30X07T2 IGBT Discrete 60 60 50 50 40 40 IC [A] IC [A] VGE=15V 30 20 30 20 10 10 Tj=25℃ Tj=150℃ Tj=175℃ 0 Tj=25℃ Tj=150℃ Tj=175℃ 0 0 0.5 1 1.5 2 VCE [V] 2.5 3 Fig 1. IGBT-inverter Output Characteristics 5 5 Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ 5 4 8 9 VGE [V] 10 11 12 VCC=400V IC=30A VGE=±15V 3 E [mJ] 3 7 Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ 4 VCC=400V RG=15Ω VGE=±15V 6 Fig 2. IGBT-inverter Transfer Characteristics 6 E [mJ] VCE=20V 2 2 1 1 0 0 0 10 20 30 40 IC [A] 50 60 Fig 3. IGBT-inverter Switching Loss vs. IC ©2021 STARPOWER Semiconductor Ltd. 0 30 60 90 RG [Ω] 120 150 Fig 4. IGBT-inverter Switching Loss vs. RG 2/15/2021 5/9 B01 DG30X07T2 IGBT Discrete 100 1 80 0.1 IC [A] ZthJC [K/W] 60 40 single pulse D=0.01 D=0.02 D=0.05 0.01 D=0.1 D=0.2 RG=15Ω VGE=±15V Tj=175oC 20 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0792 0.2435 0.2494 0.1479 τi[s]: 0.1730 0.0275 0.0026 0.0003 0 0 0.001 0.000001 100 200 300 400 500 600 700 VCE [V] Fig 5. IGBT-inverter RBSOA 0.0001 0.01 1 t [s] Fig 6. IGBT-inverter Transient Thermal Impedance 60 0.5 Tj=25℃ Tj=150℃ Tj=175℃ 50 Erec Tj=150℃ Erec Tj=175℃ 0.4 40 E [mJ] IF [A] 0.3 30 0.2 20 VCC=400V RG=15Ω VGE=-15V 0.1 10 0 0 0 0.5 1 1.5 VF [V] 2 2.5 Fig 7. Diode-inverter Forward Characteristics ©2021 STARPOWER Semiconductor Ltd. 0 6 12 18 24 30 36 42 48 54 60 IF [A] Fig 8. Diode-inverter Switching Loss vs. IF 2/15/2021 6/9 B01 DG30X07T2 IGBT Discrete 0.4 Erec Tj=150℃ 1 Erec Tj=175℃ ZthJC [K/W] E [mJ] 0.3 0.2 0.1 single pulse D=0.01 D=0.02 D=0.05 D=0.1 0.01 D=0.2 0.1 VCC=400V IF=30A VGE=-15V D=0.5 i: 1 2 3 4 ri[K/W]: 0.2528 0.3350 0.3048 0.1573 τi[s]: 0.0730 0.0081 0.0011 0.0002 0 0 30 60 90 RG [Ω] 120 150 Fig 9. Diode-inverter Switching Loss vs. RG ©2021 STARPOWER Semiconductor Ltd. 0.001 0.000001 0.0001 0.01 1 t [s] Fig 10. Diode-inverter Transient Thermal Impedance 2/15/2021 7/9 B01 DG30X07T2 IGBT Discrete Circuit Schematic 2 1 3 Package Dimensions Dimensions in Millimeters ©2021 STARPOWER Semiconductor Ltd. 2/15/2021 8/9 B01 DG30X07T2 IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2021 STARPOWER Semiconductor Ltd. 2/15/2021 9/9 B01