GD150HFU120C2S

GD150HFU120C2S IGBT Module STARPOWER IGBT SEMICONDUCTORTM GD150HFU120C2S Molding Type Module 1200V/150A 2 in one-package General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. Features         NPT IGBT technology 10μs short circuit capability Low switching losses Rugged with ultrafast performance VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications    Switching mode power supplies Inductive heating Electronic welder ©2014 STARPOWER Semiconductor Ltd. 11/17/2014 1/9 Rev.C GD150HFU120C2S IGBT Module Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol Description GD150HFU120C2S Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ TC=25℃ @ TC=80℃ 280 150 A ICM(1) Pulsed Collector Current tp=1ms 300 A IF Diode Continuous Forward Current 150 A IFM(1) Diode Maximum Forward Current 300 A PD Maximum power Dissipation @ Tj=150℃ 1147 W Tj Maximum Junction Temperature 150 ℃ TSTG Storage Temperature Range -40 to +125 ℃ VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V Power Terminal Screw:M6 2.5 to 5.0 N.m Mounting Screw:M6 3.0 to 6.0 N.m Mounting Torque Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)CES Collector-Emitter Breakdown Voltage Tj=25℃ ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25℃ 5.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25℃ 400 nA 1200 V On Characteristics Symbol Parameter VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage ©2014 STARPOWER Semiconductor Ltd. Test Conditions Min. Typ. Max. Units IC=1.5mA,VCE=VGE, Tj=25℃ 4.4 5.2 6.0 V IC=150A,VGE=15V, Tj=25℃ 3.10 3.60 IC=150A,VGE=15V, Tj=125℃ 3.45 11/17/2014 V 2/9 Rev.C GD150HFU120C2S IGBT Module Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units td(on) Turn-On Delay Time 612 ns tr Rise Time 116 ns td(off) Turn-Off Delay Time 546 ns tf Fall Time 125 ns Eon Turn-On Switching Loss 14.7 mJ Eoff Turn-Off Switching Loss 8.9 mJ td(on) Turn-On Delay Time 609 ns tr Rise Time 116 ns td(off) Turn-Off Delay Time 564 ns tf Fall Time 148 ns Eon Turn-On Switching Loss 17.5 mJ Eoff Turn-Off Switching Loss 11.0 mJ Cies Input Capacitance 12.7 nF Coes Output Capacitance 1.14 nF Cres Reverse Transfer Capacitance 0.46 nF 1400 A 2.4 Ω VCC=600V,IC=150A, RG=6.8Ω,VGE=±15V, L=200nH,Tj=25℃ VCC=600V,IC=150A, RG=6.8Ω,VGE=±15V, L=200nH,Tj=125℃ VCE=30V,f=1MHz, VGE=0V TP≤10μs,VGE=15V, Tj=25℃,VCC=600V, VCEM≤1200V ISC SC Data RGint Internal Gate Resistance LCE Stray Inductance RCC’+EE’ Module Lead Resistance, Terminal To Chip 18 0.32 TC=25℃ nH mΩ Electrical Characteristics of DIODE TC=25℃ unless otherwise noted Symbol Parameter VF Diode Forward Voltage Qr Recovered Charge IRM Peak Reverse Recovery Current Erec Reverse Recovery Energy Test Conditions IF=150A IF=150A, VR=600V, di/dt=-1500A/μs, VGE=-15V ©2014 STARPOWER Semiconductor Ltd. Typ. Max. Tj=25℃ 1.75 2.15 Tj=125℃ 1.80 Tj=25℃ 8.2 Tj=125℃ 19.1 Tj=25℃ 85 Tj=125℃ 125 Tj=25℃ 4.2 Tj=125℃ 8.4 11/17/2014 Min. 3/9 Units V μC A mJ Rev.C GD150HFU120C2S IGBT Module Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (per IGBT) 0.109 K/W RθJC Junction-to-Case (per DIODE) 0.180 K/W RθCS Case-to-Sink (Conductive grease applied) G Weight of Module ©2014 STARPOWER Semiconductor Ltd. 11/17/2014 0.035 K/W 300 g 4/9 Rev.C GD150HFU120C2S IGBT Module Fig 1. IGBT Typical Output Characteristics Fig 2. IGBT Typical Transfer Characteristics Fig 3. IGBT Switching Loss vs. IC ©2014 STARPOWER Semiconductor Ltd. Fig 4. IGBT Switching Loss vs. RG 11/17/2014 5/9 Rev.C GD150HFU120C2S Fig 5. RBSOA IGBT Module Fig 6. IGBT Transient Thermal Impedance Fig 7. Diode Typical Forward Characteristics ©2014 STARPOWER Semiconductor Ltd. Fig 8. Diode Switching Loss vs. IF 11/17/2014 6/9 Rev.C GD150HFU120C2S Fig 9. Diode Switching Loss vs. RG ©2014 STARPOWER Semiconductor Ltd. IGBT Module Fig 10. Diode Transient Thermal Impedance 11/17/2014 7/9 Rev.C GD150HFU120C2S IGBT Module Package Dimension Dimensions in Millimeters ©2014 STARPOWER Semiconductor Ltd. 11/17/2014 8/9 Rev.C GD150HFU120C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2014 STARPOWER Semiconductor Ltd. 11/17/2014 9/9 Rev.C