GD75HFU120C1S

GD75HFU120C1S IGBT Module STARPOWER IGBT SEMICONDUCTORTM GD75HFU120C1S Molding Type Module 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS and SMPS. Features        Low VCE(sat) NPT IGBT technology Low switching losses 10μs short circuit capability VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications    UPS Switching mode power supplies Electronic welders ©2011 STARPOWER Semiconductor Ltd. 2/25/2011 1/9 Rev.D GD75HFU120C1S IGBT Module Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol Description GD75HFU120C1S Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ TC=25℃ @ TC=80℃ 150 ICM(1) Pulsed Collector Current tp=1ms 150 A IF Diode Continuous Forward Current 75 A IFM Diode Maximum Forward Current 150 A PD Maximum Power Dissipation 658 W Tj Maximum Junction Temperature 150 ℃ TSTG Storage Temperature Range -40 to +125 ℃ VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V Mounting Torque Power Terminal Screw:M5 Mounting Screw:M6 2.5 to 5.0 3.0 to 5.0 N.m A 75 @ Tj=150℃ Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)CES Collector-Emitter Breakdown Voltage Tj=25℃ ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25℃ 5.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25℃ 400 nA 1200 V On Characteristics Symbol VGE(th) VCE(sat) Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage ©2011 STARPOWER Semiconductor Ltd. Test Conditions Min. Typ. Max. Units IC=750μA,VCE=VGE, Tj=25℃ 4.4 5.2 6.0 V IC=75A,VGE=15V, Tj=25℃ 3.10 3.60 IC=75A,VGE=15V, Tj=125℃ 3.45 2/25/2011 V 2/9 Rev.D GD75HFU120C1S IGBT Module Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units td(on) Turn-On Delay Time 286 ns tr Rise Time 53 ns td(off) Turn-Off Delay Time 304 ns tf Fall Time 103 ns Eon Turn-On Switching Loss 4.16 mJ Eoff Turn-Off Switching Loss 2.17 mJ td(on) Turn-On Delay Time 297 ns tr Rise Time 56 ns td(off) Turn-Off Delay Time 321 ns tf Fall Time 136 ns Eon Turn-On Switching Loss 5.82 mJ Eoff Turn-Off Switching Loss 3.44 mJ Cies Input Capacitance 6.40 nF Coes Output Capacitance 0.57 nF Cres Reverse Transfer Capacitance 0.23 nF 300 A VCC=600V,IC=75A, RG=7.5Ω,VGE=±15V, Tj=25℃ VCC=600V,IC=75A, RG=7.5Ω,VGE=±15V, Tj=125℃ VCE=30V,f=1MHz, VGE=0V tSC≤10μs,VGE=15V, Tj=125℃,VCC=600V, VCEM≤1200V ISC SC Data LCE Stray Inductance RCC’+EE’ Module Lead Resistance, Terminal to Chip 30 0.75 TC=25℃ nH mΩ Electrical Characteristics of DIODE TC=25℃ unless otherwise noted Symbol Parameter VF Diode Forward Voltage Qr Recovered Charge IRM Peak Reverse Recovery Current Erec Reverse Recovery Energy Test Conditions IF=75A IF=75A, VR=600 V, di/dt=-1550A/μs, VGE=-15V ©2011 STARPOWER Semiconductor Ltd. Typ. Max. Tj=25℃ 1.78 2.18 Tj=125℃ 1.85 Tj=25℃ 3.6 Tj=125℃ 7.9 Tj=25℃ 63 Tj=125℃ 73 Tj=25℃ 2.21 Tj=125℃ 4.48 2/25/2011 Min. 3/9 Units V μC A mJ Rev.D GD75HFU120C1S IGBT Module Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case (per IGBT) 0.19 K/W RθJC Junction-to-Case (per DIODE) 0.49 K/W RθCS Case-to-Sink (Conductive grease applied) 0.05 K/W Weight Weight of Module 150 g ©2011 STARPOWER Semiconductor Ltd. 2/25/2011 4/9 Rev.D GD75HFU120C1S IGBT Module Fig 1. IGBT Typical Output Characteristics Fig 2. IGBT Typical Transfer Characteristics Fig 3. IGBT Switching Loss vs. IC ©2011 STARPOWER Semiconductor Ltd. Fig 4. IGBT Switching Loss vs. RG 2/25/2011 5/9 Rev.D GD75HFU120C1S Fig 5. RBSOA IGBT Module Fig 6. IGBT Transient Thermal Impedance Fig 7. Diode Typical Forward Characteristics ©2011 STARPOWER Semiconductor Ltd. Fig 8. Diode Switching Loss vs. IF 2/25/2011 6/9 Rev.D GD75HFU120C1S Fig 9. Diode Switching Loss vs. RG ©2011 STARPOWER Semiconductor Ltd. IGBT Module Fig 10. Diode Transient Thermal Impedance 2/25/2011 7/9 Rev.D GD75HFU120C1S IGBT Module Package Dimension Dimensions in Millimeters ©2011 STARPOWER Semiconductor Ltd. 2/25/2011 8/9 Rev.D GD75HFU120C1S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2011 STARPOWER Semiconductor Ltd. 2/25/2011 9/9 Rev.D