DG50X07T2

DG50X07T2 IGBT Discrete DOSEMI IGBT DG50X07T2 650V/50A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features       Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 7/11/2019 1/9 Preliminary DG50X07T2 IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp limited by Tjmax Maximum Power Dissipation @ Tj=175oC Value 650 ±20 100 50 150 714 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current @ TC=25oC @ TC=100oC Diode Maximum Forward Current tp limited by Tjmax Value 650 100 50 150 Unit V Values 175 -40 to +150 -40 to +150 260 0.6 Unit o C o C o C o C N.m A A W Diode Symbol VRRM IF IFM A A Discrete Symbol Tjmax Tjop TSTG TS M Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s Mounting Torque, Screw M3 ©2019 STARPOWER Semiconductor Ltd. 7/11/2019 2/9 Preliminary DG50X07T2 IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=50A,VGE=15V, Tj=25oC IC=50A,VGE=15V, Tj=125oC IC=50A,VGE=15V, Tj=150oC IC=0.80mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=50A, RG=6.8Ω,VGE=±15V, Tj=25oC VCC=300V,IC=50A, RG=6.8Ω,VGE=±15V, Tj=125oC VCC=300V,IC=50A, RG=6.8Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150 oC,VCC=300V, VCEM≤650V ©2019 STARPOWER Semiconductor Ltd. 7/11/2019 Typ. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 0 5.80 Ω nF 0.11 nF 0.35 18 15 136 24 uC ns ns ns ns 0.32 mJ 0.96 mJ 18 18 152 32 ns ns ns ns 0.46 mJ 1.28 mJ 18 18 160 40 ns ns ns ns 0.51 mJ 1.36 mJ 250 A 3/9 Preliminary DG50X07T2 IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=50A,VGE=0V,Tj=25oC IF=50A,VGE=0V,Tj=125oC IF=50A,VGE=0V,Tj=150oC Min. Typ. 1.30 1.25 1.20 2.2 VR=300V,IF=50A, -di/dt=2420A/μs,VGE=-15V Tj=25oC VR=300V,IF=50A, -di/dt=2420A/μs,VGE=-15V Tj=125oC VR=300V,IF=50A, -di/dt=2420A/μs,VGE=-15V Tj=150oC Max. 1.75 Unit V μC 55 A 0.55 mJ 4.3 μC 66 A 1.10 mJ 4.8 μC 72 A 1.27 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RthJC RthJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2019 STARPOWER Semiconductor Ltd. Min. 7/11/2019 Typ. Max. 0.210 0.410 Unit K/W 40 K/W 4/9 Preliminary DG50X07T2 IGBT Discrete 100 100 VGE=15V VCE=20V 60 60 IC [A] 80 IC [A] 80 40 40 20 20 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0.5 1 1.5 2 VCE [V] 2.5 Tj=25℃ Tj=125℃ Tj=150℃ 0 3 Fig 1. IGBT-inverter Output Characteristics 5 6 8 9 VGE [V] 10 11 12 Fig 2. IGBT-inverter Transfer Characteristics 6 3.5 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 3 Eon,Tj=125℃ Eoff,Tj=125℃ 5 Eon,Tj=150℃ Eoff,Tj=150℃ 2.5 4 VCC=300V RG=6.8Ω VGE=±15V 2 E [mJ] E [mJ] 7 1.5 3 2 1 VCC=300V IC=50A VGE=±15V 1 0.5 0 0 0 20 40 60 IC [A] 80 100 Fig 3. IGBT-inverter Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 10 20 30 40 RG [Ω] 50 60 70 Fig 4. IGBT-inverter Switching Loss vs. RG 7/11/2019 5/9 Preliminary DG50X07T2 IGBT Discrete 1 120 Module 100 IGBT ZthJC [K/W] IC [A] 80 60 0.1 40 RG=6.8Ω VGE=±15V Tj=150oC 20 i: 1 2 3 4 ri[K/W]: 0.0741 0.0621 0.0561 0.0177 0.1100 0.0156 0.00135 0.000151 τi[s]: 0 0 150 300 450 VCE [V] 600 0.01 0.0001 750 Fig 5. IGBT-inverter RBSOA 0.001 0.01 t [s] 0.1 1 Fig 6. IGBT-inverter Transient Thermal Impedance 1.8 100 Erec,Tj=125℃ Tj=25℃ 1.6 Tj=125℃ Tj=150℃ 80 Erec,Tj=150℃ 1.4 1.2 IF [A] E [mJ] 60 1 0.8 40 0.6 0.4 20 VCC=300V RG=6.8Ω VGE=-15V 0.2 0 0 0 0.5 1 VF [V] 1.5 2 Fig 7. Diode-inverter Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 20 40 60 IF [A] 80 100 Fig 8. Diode-inverter Switching Loss vs. IF 7/11/2019 6/9 Preliminary DG50X07T2 IGBT Discrete 1 1.4 Erec,Tj=125℃ 1.2 Diode Erec,Tj=150℃ ZthJC [K/W] E [mJ] 1 0.8 0.6 0.1 0.4 VCC=300V IF=50A VGE=-15V 0.2 i: 1 2 3 4 ri[K/W]: 0.0792 0.1093 0.1373 0.0842 0.0723 0.00813 0.00109 0.000155 τi[s]: 0 0 10 20 30 40 RG [Ω] 50 60 70 Fig 9. Diode-inverter Switching Loss vs. RG ©2019 STARPOWER Semiconductor Ltd. 0.01 0.0001 0.001 0.01 t [s] 0.1 1 Fig 10. Diode-inverter Transient Thermal Impedance 7/11/2019 7/9 Preliminary DG50X07T2 IGBT Discrete Circuit Schematic Package Dimensions 5±0.2 3.7±0.2 4.1±0.2 21+0.3 -0.2 6.1±0.2 15.8±0.3 10.8±0.2 φ3 .5 5± 0. 25 Dimensions in Millimeters 3.1±0.2 19.9±0.5 2.1±0.2 2.35±0.25 1.2±0.2 5.45±0.2 5.45±0.2 ©2019 STARPOWER Semiconductor Ltd. 0.6 7/11/2019 8/9 Preliminary DG50X07T2 IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 7/11/2019 9/9 Preliminary