GD150PIY120C6SN
IGBT Module
STARPOWER
SEMICONDUCTOR
IGBT
GD150PIY120C6SN
1200V/150A PIM in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2017 STARPOWER Semiconductor Ltd.
1/29/2017
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SN0C
GD150PIY120C6SN
IGBT Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT-inverter
Symbol
VCES
VGES
IC
ICM
PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ TC=25oC
@ TC=100oC
Pulsed Collector Current tp=1ms
Maximum Power Dissipation @ Tj=175oC
Values
1200
±20
292
150
300
1111
Unit
V
V
Values
1200
150
300
Unit
V
A
A
Value
1600
150
1800
16200
Unit
V
A
A
A2s
Value
1200
±20
200
100
200
833
Unit
V
V
Value
1200
50
100
Unit
V
A
A
Value
175
150
-40 to +150
-40 to +125
2500
Unit
A
A
W
Diode-inverter
Symbol
VRRM
IF
IFM
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current tp=1ms
Diode-rectifier
Symbol
VRRM
IO
IFSM
I2t
Description
Repetitive Peak Reverse Voltage
Average Output Current 50Hz/60Hz,sine wave
Surge Forward Current VR=0V,tp=10ms,Tj=45oC
I2t-value,VR=0V,tp=10ms,Tj=45oC
IGBT-brake
Symbol
VCES
VGES
IC
ICM
PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ TC=25oC
@ TC=100oC
Pulsed Collector Current tp=1ms
Maximum Power Dissipation @ Tj=175oC
A
A
W
Diode-brake
Symbol
VRRM
IF
IFM
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current tp=1ms
Module
Symbol
Tjmax
Tjop
TSTG
VISO
Description
Maximum Junction Temperature(inverter,brake)
Maximum Junction Temperature (rectifier)
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
©2017 STARPOWER Semiconductor Ltd.
1/29/2017
2/13
o
C
o
C
C
V
o
SN0C
GD150PIY120C6SN
IGBT Module
IGBT-inverter Characteristics TC=25oC unless otherwise noted
Symbol
VCE(sat)
VGE(th)
ICES
IGES
RGint
Cies
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
Parameter
Collector to Emitter
Saturation Voltage
Gate-Emitter Threshold
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Internal Gate Resistance
Input Capacitance
Reverse Transfer
Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
SC Data
Test Conditions
IC=150A,VGE=15V,
Tj=25oC
IC=150A,VGE=15V,
Tj=125oC
IC=150A,VGE=15V,
Tj=150oC
IC=3.75mA,VCE=VGE,
Tj=25oC
VCE=VCES,VGE=0V,
Tj=25oC
VGE=VGES,VCE=0V,
Tj=25oC
Min.
Max.
1.70
2.15
1.95
Unit
V
2.00
5.2
VCE=25V,f=1MHz,
VGE=0V
VGE=-15…+15V
VCC=600V,IC=150A,
RG=1.1Ω,VGE=±15V,
Tj=25oC
VCC=600V,IC=150A,
RG=1.1Ω,VGE=±15V,
Tj=125oC
VCC=600V,IC=150A,
RG=1.1Ω,VGE=±15V,
Tj=150oC
tP≤10μs,VGE=15V,
Tj=150oC,VCC=900V,
VCEM≤1200V
©2017 STARPOWER Semiconductor Ltd.
Typ.
1/29/2017
6.0
6.8
V
1.0
mA
400
nA
5.0
10.5
Ω
nF
0.60
nF
1.30
123
27
407
66
μC
ns
ns
ns
ns
5.35
mJ
11.0
mJ
139
32
495
116
ns
ns
ns
ns
9.63
mJ
16.5
mJ
144
32
528
138
ns
ns
ns
ns
10.7
mJ
17.6
mJ
600
A
3/13
SN0C
GD150PIY120C6SN
IGBT Module
Diode-inverter Characteristics TC=25oC unless otherwise noted
Symbol
VF
Qr
IRM
Erec
Qr
IRM
Erec
Qr
IRM
Erec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
IF=150A,VGE=0V,Tj=25oC
IF=150A,VGE=0V,Tj=125oC
IF=150A,VGE=0V,Tj=150oC
Min.
VR=600V,IF=150A,
-di/dt=5800A/μs,VGE=-15V
Tj=25oC
VR=600V,IF=150A,
-di/dt=5800A/μs,VGE=-15V
Tj=125oC
VR=600V,IF=150A,
-di/dt=5800A/μs,VGE=-15V
Tj=150oC
Typ.
1.65
1.65
1.65
13.3
Max.
2.10
Units
V
μC
209
A
6.65
mJ
23.8
μC
228
A
10.9
mJ
26.6
μC
238
A
12.8
mJ
Diode-rectifier Characteristics TC=25oC unless otherwise noted
Symbol
VF
IR
Parameter
Diode Forward
Voltage
Reverse Current
Test Conditions
Min.
IC=150A,Tj=150oC
Typ.
Max.
1.17
Tj=150oC,VR=1600V
©2017 STARPOWER Semiconductor Ltd.
V
2.0
1/29/2017
4/13
Unit
mA
SN0C
GD150PIY120C6SN
IGBT Module
IGBT-brake Characteristics TC=25oC unless otherwise noted
Symbol
VCE(sat)
VGE(th)
ICES
IGES
RGint
Cies
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
Parameter
Collector to Emitter
Saturation Voltage
Gate-Emitter Threshold
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Internal Gate Resistance
Input Capacitance
Reverse Transfer
Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
SC Data
Test Conditions
IC=100A,VGE=15V,
Tj=25oC
IC=100A,VGE=15V,
Tj=125oC
IC=100A,VGE=15V,
Tj=150oC
IC=2.50mA,VCE=VGE,
Tj=25oC
VCE=VCES,VGE=0V,
Tj=25oC
VGE=VGES,VCE=0V,
Tj=25oC
Min.
Max.
1.70
2.15
1.95
Unit
V
2.00
5.2
VCE=25V,f=1MHz,
VGE=0V
VGE=-15…+15V
VCC=600V,IC=100A,
RG=1.6Ω,VGE=±15V,
Tj=25oC
VCC=600V,IC=100A,
RG=1.6Ω,VGE=±15V,
Tj=125oC
VCC=600V,IC=100A,
RG=1.6Ω,VGE=±15V,
Tj=150oC
tP≤10μs,VGE=15V,
Tj=150oC,VCC=900V,
VCEM≤1200V
©2017 STARPOWER Semiconductor Ltd.
Typ.
1/29/2017
6.0
6.8
V
1.0
mA
100
nA
7.5
7.00
Ω
nF
0.40
nF
0.88
170
32
360
86
μC
ns
ns
ns
ns
5.90
mJ
6.05
mJ
180
42
470
165
ns
ns
ns
ns
9.10
mJ
9.35
mJ
181
43
480
186
ns
ns
ns
ns
10.0
mJ
10.5
mJ
400
A
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SN0C
GD150PIY120C6SN
IGBT Module
Diode-brake Characteristics TC=25oC unless otherwise noted
Symbol
VF
Qr
IRM
Erec
Qr
IRM
Erec
Qr
IRM
Erec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
IF=50A,VGE=0V,Tj=25oC
IF=50A,VGE=0V,Tj=125oC
IF=50A,VGE=0V,Tj=150oC
Min.
VR=600V,IF=50A,
-di/dt=1400A/μs,VGE=-15V
Tj=25oC
VR=600V,IF=50A,
-di/dt=1400A/μs,VGE=-15V
Tj=125oC
VR=600V,IF=50A,
-di/dt=1400A/μs,VGE=-15V
Tj=150oC
Typ.
1.70
1.65
1.65
5.2
Max.
2.15
Unit
V
μC
51
A
1.62
mJ
8.4
μC
57
A
2.85
mJ
9.5
μC
60
A
3.52
mJ
NTC Characteristics TC=25oC unless otherwise noted
Symbol
R25
∆R/R
P25
Parameter
Rated Resistance
Deviation of R100
Power
Dissipation
B25/50
B-value
B25/80
B-value
B25/100
B-value
Test Conditions
Min.
TC=100 oC,R100=493.3Ω
Max.
-5
R2=R25exp[B25/50(1/T21/(298.15K))]
R2=R25exp[B25/80(1/T21/(298.15K))]
R2=R25exp[B25/100(1/T21/(298.15K))]
©2017 STARPOWER Semiconductor Ltd.
Typ.
5.0
1/29/2017
5
Unit
kΩ
%
20.0
mW
3375
K
3411
K
3433
K
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GD150PIY120C6SN
IGBT Module
Module Characteristics TC=25oC unless otherwise noted
Symbol
LCE
RCC’+EE’
RAA’+CC’
RthJC
RthCH
M
G
Parameter
Min.
Stray Inductance
Module Lead Resistance,Terminal to Chip
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per Diode-inverter)
Junction-to-Case (per Diode-rectifier)
Junction-to-Case (per IGBT-brake)
Junction-to-Case (per Diode-brake)
Case-to-Heatsink (per IGBT-inverter)
Case-to-Heatsink (per Diode-inverter)
Case-to-Heatsink (per Diode-rectifier)
Case-to-Heatsink (per IGBT-brake)
Case-to-Heatsink (per Diode-brake)
Case-to-Heatsink (per Module)
Mounting Torque, Screw:M5
Weight of Module
©2017 STARPOWER Semiconductor Ltd.
Typ.
40
4.00
3.00
Max.
mΩ
0.135
0.300
0.249
0.180
0.472
0.117
0.260
0.216
0.156
0.409
0.009
K/W
K/W
3.0
6.0
300
1/29/2017
Unit
nH
7/13
N.m
g
SN0C
GD150PIY120C6SN
IGBT Module
300
300
250
250
200
200
IC [A]
IC [A]
VGE=15V
150
100
150
100
Tj=25℃
Tj=125℃
Tj=150℃
50
50
0
Tj=25℃
Tj=125℃
Tj=150℃
0
0
0.5
1
1.5 2 2.5
VCE [V]
3
3.5
Fig 1. IGBT-inverter Output Characteristics
5
6
7
8 9 10 11 12 13
VGE [V]
Fig 2. IGBT-inverter Transfer Characteristics
35
35
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
30
Eon Tj=125℃
Eoff Tj=125℃
Eon Tj=150℃
Eoff Tj=150℃
30
25
25
VCC=600V
RG=1.1Ω
VGE=±15V
20
E [mJ]
E [mJ]
VCE=20V
15
10
20
15
10
5
VCC=600V
IC=150A
VGE=±15V
5
0
0
0
50
100
150 200
IC [A]
250
300
Fig 3. IGBT-inverter Switching Loss vs. IC
©2017 STARPOWER Semiconductor Ltd.
0
2
4
6
8
RG [Ω]
10
12
Fig 4. IGBT-inverter Switching Loss vs. RG
1/29/2017
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SN0C
GD150PIY120C6SN
IGBT Module
1
350
Module
300
IGBT
250
ZthJC [K/W]
IC [A]
0.1
200
150
0.01
100
RG=1.1Ω
VGE=±15V
Tj=150oC
50
i:
1
2
3
4
ri[K/W]: 0.0080 0.0445 0.0433 0.0392
0.01
0.02
0.05
0.1
τi[s]:
0
0
350
700
VCE [V]
1050
0.001
0.001
1400
Fig 5. IGBT-inverter RBSOA
0.1
t [s]
1
10
Fig 6. IGBT-inverter Transient Thermal Impedance
300
18
Tj=25℃
Tj=125℃
Tj=150℃
250
Erec Tj=125℃
Erec Tj=150℃
15
12
E [mJ]
200
IF [A]
0.01
150
100
9
6
50
VCC=600V
RG=1.1Ω
VGE=-15V
3
0
0
0
0.5
1
1.5
VF [V]
2
2.5
Fig 7. Diode-inverter Forward Characteristics
©2017 STARPOWER Semiconductor Ltd.
0
50
100
150 200
IF [A]
250
300
Fig 8. Diode-inverter Switching Loss vs. IF
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GD150PIY120C6SN
IGBT Module
1
13
Erec Tj=125℃
12
Diode
Erec Tj=150℃
11
ZthJC [K/W]
E [mJ]
0.1
10
9
0.01
8
VCC=600V
IF=150A
VGE=-15V
7
i:
1
2
3
4
ri[K/W]: 0.0180 0.0990 0.0960 0.0870
0.01
0.02
0.05
0.1
τi[s]:
6
0
2
4
6
8
RG [Ω]
10
0.001
0.001
12
Fig 9. Diode-inverter Switching Loss vs. RG
0.01
0.1
t [s]
1
10
Fig 10. Diode-inverter Transient Thermal Impedance
200
300
Tj=25℃
VGE=15V
175
Tj=150℃
250
150
125
IC [A]
IF [A]
200
150
100
75
100
50
50
Tj=25℃
Tj=125℃
Tj=150℃
25
0
0
0.4
0.6
0.8
1
1.2
VF [V]
1.4
1.6
Fig 11. Diode-rectifier Forward Characteristics
©2017 STARPOWER Semiconductor Ltd.
0
0.5
1
1.5 2 2.5
VCE [V]
3
3.5
Fig 12. IGBT-brake-chopper Output Characteristics
1/29/2017
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GD150PIY120C6SN
IGBT Module
100
100
Tj=25℃
Tj=125℃
Tj=150℃
75
R [kΩ]
IF [A]
10
50
1
25
0
0.1
0
0.5
1
1.5
VF [V]
2
2.5
Fig 13. Diode-brake-chopper Forward Characteristics
©2017 STARPOWER Semiconductor Ltd.
0
30
60
90
TC [oC]
120
Fig 14. NTC Temperature Characteristic
1/29/2017
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150
GD150PIY120C6SN
IGBT Module
Circuit Schematic
39,40,41
33,34,35
10
22
1,2,3
4,5,6
14
11,12,13
36,37,38
7,8,9
18
15,16,17
19,20,21
23
42,43,44
29
30,31,32
28
26
24
25
27
Package Dimensions
Dimensions in Millimeters
©2017 STARPOWER Semiconductor Ltd.
1/29/2017
12/13
SN0C
GD150PIY120C6SN
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2017 STARPOWER Semiconductor Ltd.
1/29/2017
13/13
SN0C