GD450HFX170C6S

GD450HFX170C6S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD450HFX170C6S 1700V/450A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 3/15/2019 1/9 preliminary GD450HFX170C6S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1700 ±20 706 450 900 2542 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1700 450 900 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2019 STARPOWER Semiconductor Ltd. 3/15/2019 2/9 preliminary GD450HFX170C6S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=450A,VGE=15V, Tj=25oC IC=450A,VGE=15V, Tj=125oC IC=450A,VGE=15V, Tj=150oC IC=18.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=125oC VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V ©2019 STARPOWER Semiconductor Ltd. 3/15/2019 Typ. Max. 1.85 2.20 2.25 Unit V 2.35 5.6 6.2 6.8 V 5.0 mA 400 nA 1.67 54.2 Ω nF 1.32 nF 4.24 179 105 680 375 μC ns ns ns ns 116 mJ 113 mJ 208 120 784 613 ns ns ns ns 152 mJ 171 mJ 208 120 800 720 ns ns ns ns 167 mJ 179 mJ 1800 A 3/9 preliminary GD450HFX170C6S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=450A,VGE=0V,Tj=25oC IF=450A,VGE=0V,Tj=125oC IF=450A,VGE=0V,Tj=150oC Min. Typ. 1.80 1.95 1.90 105 VR=900V,IF=450A, -di/dt=4580A/μs,VGE=-15V Tj=25oC VR=900V,IF=450A, -di/dt=4580A/μs,VGE=-15V Tj=125oC VR=900V,IF=450A, -di/dt=4580A/μs,VGE=-15V Tj=150oC Max. 2.25 Unit V μC 198 A 69.0 mJ 187 μC 578 A 129 mJ 209 μC 585 A 150 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω Typ. 5.0 -5 R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M5 Weight of Module ©2019 STARPOWER Semiconductor Ltd. Min. Typ. 20 1.10 Max. 0.059 0.083 0.031 0.043 0.009 3.0 3.0 3/15/2019 4/9 K/W K/W 6.0 6.0 350 Unit nH mΩ N.m g preliminary GD450HFX170C6S IGBT Module 900 900 VGE=15V 800 700 700 600 600 500 500 IC [A] IC [A] 800 400 300 200 200 Tj=25℃ Tj=125℃ Tj=150℃ Tj=25℃ Tj=125℃ Tj=150℃ 100 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 4 5 Fig 1. IGBT Output Characteristics 6 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT Transfer Characteristics 600 900 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 400 VCC=900V RG=3.3Ω VGE=±15V 300 200 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 800 700 VCC=900V IC=450A VGE=±15V 600 E [mJ] 500 E [mJ] 400 300 100 VCE=20V 500 400 300 200 100 100 0 0 0 150 300 450 600 750 900 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 5 10 15 20 RG [Ω] 25 30 Fig 4. IGBT Switching Loss vs. RG 3/15/2019 5/9 preliminary 35 GD450HFX170C6S IGBT Module 1000 0.1 Module IGBT 900 800 700 ZthJC [K/W] IC [A] 600 500 400 0.01 300 RG=3.3Ω VGE=±15V Tj=150oC 200 100 i: 1 2 3 4 ri[K/W]: 0.0034 0.0196 0.0189 0.0171 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.001 0.001 300 600 900 1200 1500 1800 VCE [V] Fig 5. RBSOA 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 240 900 Tj=25℃ Tj=125℃ Tj=150℃ 800 Erec Tj=125℃ 210 700 Erec Tj=150℃ 180 600 150 500 E [mJ] IF [A] 0.01 400 120 90 300 60 200 VCC=900V RG=3.3Ω VGE=-15V 30 100 0 0 0.0 0.5 1.0 1.5 2.0 VF [V] 2.5 3.0 Fig 7. Diode Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 150 300 450 600 750 900 IF [A] Fig 8. Diode Switching Loss vs. IF 3/15/2019 6/9 preliminary GD450HFX170C6S IGBT Module 0.1 175 Erec Tj=125℃ Diode Erec Tj=150℃ 150 ZthJC [K/W] E [mJ] 125 100 75 0.01 50 VCC=900V IF=450A VGE=-15V 25 i: 1 2 3 4 ri[K/W]: 0.0049 0.0273 0.0266 0.0242 τi[s]: 0.01 0.02 0.05 0.1 0 0 5 10 15 20 RG [Ω] 25 30 35 Fig 9. Diode Switching Loss vs. RG 0.001 0.001 0.01 0.1 t [s] 1 Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 10 150 Fig 11. NTC Temperature Characteristic ©2019 STARPOWER Semiconductor Ltd. 3/15/2019 7/9 preliminary GD450HFX170C6S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters 9 8 6 7 5 4 10 11 3 1 2 A B ©2019 STARPOWER Semiconductor Ltd. 3/15/2019 8/9 preliminary GD450HFX170C6S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 3/15/2019 9/9 preliminary