GD100FFX170C6S

GD100FFX170C6S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD100FFX170C6S 1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Uninterruptible power supply Inductive heating Welding machine Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 5/19/2019 1/9 Preliminary GD100FFX170C6S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1700 ±20 168 100 200 632 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1700 100 200 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2019 STARPOWER Semiconductor Ltd. 5/19/2019 2/9 Preliminary GD100FFX170C6S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=100A,VGE=15V, Tj=25oC IC=100A,VGE=15V, Tj=125oC IC=100A,VGE=15V, Tj=150oC IC=4.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=900V,IC=100A, RG=4.8Ω,VGE=±15V, Tj=25oC VCC=900V,IC=100A, RG=4.8Ω,VGE=±15V, Tj=125oC VCC=900V,IC=100A, RG=4.8Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=1000V, VCEM≤1700V ©2019 STARPOWER Semiconductor Ltd. 5/19/2019 Typ. Max. 1.85 2.20 2.25 Unit V 2.35 5.6 6.2 6.8 V 5.0 mA 400 nA 7.5 12.0 Ω nF 0.29 nF 0.94 187 31 434 363 μC ns ns ns ns 18.5 mJ 20.8 mJ 194 44 503 637 ns ns ns ns 30.3 mJ 32.1 mJ 202 55 512 720 ns ns ns ns 33.0 mJ 34.8 mJ 400 A 3/9 Preliminary GD100FFX170C6S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=100A,VGE=0V,Tj=25oC IF=100A,VGE=0V,Tj=125oC IF=100A,VGE=0V,Tj=150oC Min. Typ. 1.80 1.90 1.95 17.8 VR=900V,IF=100A, -di/dt=3550A/μs,VGE=-15V Tj=25oC VR=900V,IF=100A, -di/dt=3550A/μs,VGE=-15V Tj=125oC VR=900V,IF=100A, -di/dt=3550A/μs,VGE=-15V Tj=150oC Max. 2.25 Unit V μC 103 A 9.78 mJ 33.7 μC 107 A 19.4 mJ 37.4 μC 106 A 23.8 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω Typ. 5.0 -5 R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance,Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Mounting Screw:M5 Weight of Module ©2019 STARPOWER Semiconductor Ltd. Min. Typ. 21 1.80 Max. 0.237 0.397 0.086 0.144 0.009 3.0 5/19/2019 Unit nH mΩ K/W K/W 300 6.0 N.m g 4/9 Preliminary GD100FFX170C6S IGBT Module 200 200 VGE=15V 175 150 150 125 125 IC [A] IC [A] 175 100 75 VCE=20V 100 75 50 50 Tj=25℃ Tj=125℃ 25 Tj=25℃ Tj=125℃ Tj=150℃ 25 Tj=150℃ 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 4 5 Fig 1. IGBT Output Characteristics 80 60 8 9 VGE [V] 10 11 12 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 70 60 50 E [mJ] E [mJ] 80 VCC=900V RG=4.8Ω VGE=±15V 50 7 Fig 2. IGBT Transfer Characteristics Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 70 6 40 40 30 30 20 20 10 VCC=900V IC=100A VGE=±15V 10 0 0 0 50 100 IC [A] 150 200 Fig 3. IGBT Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 10 20 30 RG [Ω] 40 Fig 4. IGBT Switching Loss vs. RG 5/19/2019 5/9 Preliminary 50 GD100FFX170C6S IGBT Module 1 250 IGBT Module 200 0.1 IC [A] ZthJC [K/W] 150 100 0.01 RG=4.8Ω VGE=±15V Tj=150oC 50 i: 1 2 3 4 ri[K/W]: 0.0135 0.0786 0.0760 0.0689 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.001 0.001 300 600 900 1200 1500 1800 VCE [V] Fig 5. IGBT RBSOA 200 40 1 10 Erec Tj=125℃ Erec Tj=150℃ 35 150 30 125 25 E [mJ] IF [A] 0.1 t [s] Fig 6. IGBT Transient Thermal Impedance Tj=25℃ Tj=125℃ Tj=150℃ 175 0.01 100 20 75 15 50 10 25 5 0 VCC=900V RG=4.8Ω VGE=-15V 0 0.0 0.5 1.0 1.5 2.0 VF [V] 2.5 3.0 Fig 7. Diode Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 50 100 IF [A] 150 Fig 8. Diode Switching Loss vs. IF 5/19/2019 6/9 Preliminary 200 GD100FFX170C6S IGBT Module 1 40 Erec Tj=125℃ Diode Erec Tj=150℃ 30 ZthJC [K/W] E [mJ] 0.1 20 0.01 10 VCC=900V IF=100A VGE=-15V i: 1 2 3 4 ri[K/W]: 0.0236 0.1309 0.1272 0.1153 τi[s]: 0.01 0.02 0.05 0.1 0 0 10 20 30 RG [Ω] 40 50 Fig 9. Diode Switching Loss vs. RG 0.001 0.001 0.01 0.1 t [s] 1 Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 10 150 Fig 11. NTC Temperature Characteristic ©2019 STARPOWER Semiconductor Ltd. 5/19/2019 7/9 Preliminary GD100FFX170C6S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters 27 24 21 13 33 16 30 19 1 3 5 ©2019 STARPOWER Semiconductor Ltd. 7 9 5/19/2019 11 8/9 Preliminary GD100FFX170C6S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 5/19/2019 9/9 Preliminary