GD200HFU120C2S

GD200HFU120C2S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD200HFU120C2S 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features        NPT IGBT technology 10μs short circuit capability Low switching losses VCE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Switching mode power supply Inductive heating Electronic welder Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 5/18/2016 1/9 DX01 GD200HFU120C2S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=65oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=150oC Value 1200 ±20 262 200 400 1315 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1200 200 400 Unit V A A Value 150 -40 to +125 -40 to +125 2500 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 5/18/2016 2/9 DX01 GD200HFU120C2S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=200A,VGE=15V, Tj=25oC IC=200A,VGE=15V, Tj=125oC IC=2.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 3.00 3.45 Unit V 3.80 4.4 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=200A, RG=4.7Ω,VGE=±15V, Tj=25oC VCC=600V,IC=200A, RG=4.7Ω,VGE=±15V, Tj=125oC tP≤10μs,VGE=15V, Tj=125oC,VCC=900V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. Typ. 5/18/2016 5.3 6.0 V 5.0 mA 400 nA 1.3 13.0 Ω nF 0.85 nF 2.10 87 40 451 63 μC ns ns ns ns 6.8 mJ 11.9 mJ 88 44 483 78 ns ns ns ns 11.4 mJ 13.5 mJ 1300 A 3/9 DX01 GD200HFU120C2S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=200A,VGE=0V,Tj=25oC IF=200A,VGE=0V,Tj=125oC Min. Typ. 1.95 2.00 13.3 VR=600V,IF=200A, -di/dt=4600A/μs,VGE=-15V Tj=25oC VR=600V,IF=200A, -di/dt=4600A/μs,VGE=-15V Tj=125oC Max. 2.40 Unit V μC 236 A 6.6 mJ 23.0 μC 269 A 10.5 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M5 Mounting Torque, Screw M6 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Min. Typ. Max. 30 0.35 0.095 0.202 0.029 0.063 0.010 2.5 3.0 5/18/2016 4/9 K/W K/W 5.0 5.0 300 Unit nH mΩ N.m g DX01 GD200HFU120C2S IGBT Module 400 400 VGE=15V VCE=20V 350 300 300 250 250 IC [A] IC [A] 350 200 25oC 150 200 150 125oC 100 100 25oC 125oC 50 50 0 0 0 1 2 3 4 5 6 5 6 VCE [V] Fig 1. IGBT Output Characteristics 8 9 VGE [V] 10 11 Fig 2. IGBT Transfer Characteristics 40 100 VCC=600V RG=4.7Ω VGE=±15V Tj=125oC 35 30 VCC=600V IC=200A VGE=±15V Tj=125oC 80 25 Eon 60 E [mJ] E [mJ] 7 20 40 Eoff 15 Eon 10 Eoff 20 5 0 0 0 100 200 IC [A] 300 400 Fig 3. IGBT Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 10 20 30 RG [Ω] 40 Fig 4. IGBT Switching Loss vs. RG 5/18/2016 5/9 DX01 50 GD200HFU120C2S IGBT Module 450 0.1 Module IGBT 400 350 ZthJC [K/W] IC [A] 300 250 200 0.01 150 RG=4.7Ω VGE=±15V Tj=125oC 100 50 i: 1 2 3 4 ri[K/W]: 0.0058 0.0312 0.0304 0.0276 τi[s]: 0.01 0.02 0.05 0.1 0 0 350 700 VCE [V] 1050 0.001 0.001 1400 Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 400 15 350 12 Erec 300 9 E [mJ] IF [A] 250 200 6 150 100 125oC VCC=600V RG=4.7Ω VGE=-15V Tj=125oC 3 25oC 50 0 0 0 0.5 1 1.5 2 VF [V] 2.5 3 Fig 7. Diode Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 100 200 IF [A] 300 Fig 8. Diode Switching Loss vs. IF 5/18/2016 6/9 DX01 400 GD200HFU120C2S IGBT Module 1 12 VCC=600V IF=200A VGE=-15V Tj=125oC 10 Diode 0.1 ZthJC [K/W] E [mJ] 8 Erec 6 0.01 4 i: 1 2 3 4 ri[K/W]: 0.0122 0.0666 0.0645 0.0587 τi[s]: 0.01 0.02 0.05 0.1 2 0 10 20 30 RG [Ω] 40 50 Fig 9. Diode Switching Loss vs. RG ©2016 STARPOWER Semiconductor Ltd. 0.001 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 5/18/2016 7/9 DX01 GD200HFU120C2S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 5/18/2016 8/9 DX01 GD200HFU120C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 5/18/2016 9/9 DX01