GD200HFX65C2S

GD200HFX65C2S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD200HFX65C2S 650V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Automotive application Hybrid and electric vehicle Inverter for motor drive Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd. 10/27/2018 1/9 Preliminary GD200HFX65C2S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=65oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 650 ±20 247 200 400 612 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 650 200 400 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2018 STARPOWER Semiconductor Ltd. 10/27/2018 2/9 Preliminary GD200HFX65C2S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=200A,VGE=15V, Tj=25oC IC=200A,VGE=15V, Tj=125oC IC=200A,VGE=15V, Tj=150oC IC=3.2mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=200A, RG=2.0Ω,VGE=±15V, Tj=25oC VCC=300V,IC=200A, RG=2.0Ω,VGE=±15V, Tj=125oC VCC=300V,IC=200A, RG=2.0Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2018 STARPOWER Semiconductor Ltd. Typ. 10/27/2018 5.8 6.5 V 1.0 mA 400 nA 2.0 23.2 Ω nF 0.46 nF 1.39 150 30 272 48 μC ns ns ns ns 1.00 mJ 4.52 mJ 160 40 296 56 ns ns ns ns 1.55 mJ 5.36 mJ 170 40 304 56 ns ns ns ns 1.80 mJ 5.52 mJ 1000 A 3/9 Preliminary GD200HFX65C2S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=200A,VGE=0V,Tj=25oC IF=200A,VGE=0V,Tj=125oC IF=200A,VGE=0V,Tj=150oC Min. Typ. 1.55 1.50 1.45 10.0 VR=300V,IF=200A, -di/dt=5700A/μs,VGE=-15V Tj=25oC VR=300V,IF=200A, -di/dt=5700A/μs,VGE=-15V Tj=125oC VR=300V,IF=200A, -di/dt=5700A/μs,VGE=-15V Tj=150oC Max. 2.00 Unit V μC 160 A 3.00 mJ 17.0 μC 230 A 5.20 mJ 20.0 μC 240 A 5.80 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Min. Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 Weight of Module ©2018 STARPOWER Semiconductor Ltd. Typ. Max. 20 0.35 0.245 0.451 0.031 0.057 0.010 2.5 3.0 10/27/2018 4/9 K/W K/W 5.0 5.0 300 Unit nH mΩ N.m g Preliminary GD200HFX65C2S IGBT Module 400 400 VGE=15V 300 300 250 250 200 200 150 150 100 100 Tj=25℃ Tj=125℃ Tj=150℃ 50 Tj=25℃ Tj=125℃ Tj=150℃ 50 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCE [V] 6 Fig 1. IGBT Output Characteristics 16 7 8 9 10 VGE [V] 11 12 Fig 2. IGBT Transfer Characteristics 20 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 12 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 16 VCC=300V RG=2.0Ω VGE=±15V VCC=300V IC=200A VGE=±15V 12 E [mJ] E [mJ] VCE=20V 350 IC [A] IC [A] 350 8 8 4 4 0 0 0 100 200 IC [A] 300 400 Fig 3. IGBT Switching Loss vs. IC ©2018 STARPOWER Semiconductor Ltd. 0 4 8 12 RG [Ω] 16 Fig 4. IGBT Switching Loss vs. RG 10/27/2018 5/9 Preliminary 20 GD200HFX65C2S IGBT Module 1 500 Module IGBT 400 0.1 IC [A] ZthJC [K/W] 300 200 0.01 RG=2.0Ω VGE=±15V Tj=150oC 100 i: 1 2 3 4 ri[K/W]: 0.0147 0.0808 0.0782 0.0713 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.001 0.001 100 200 300 400 500 600 700 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 400 10 Erec Tj=125℃ Tj=25℃ Tj=125℃ Tj=150℃ 350 Erec Tj=150℃ 8 300 6 E [mJ] IF [A] 250 200 4 150 100 2 VCC=300V RG=2.0Ω VGE=-15V 50 0 0 0 0.4 0.8 1.2 VF [V] 1.6 2 Fig 7. Diode Forward Characteristics ©2018 STARPOWER Semiconductor Ltd. 0 100 200 IF [A] 300 Fig 8. Diode Switching Loss vs. IF 10/27/2018 6/9 Preliminary 400 GD200HFX65C2S IGBT Module 1 8 Erec Tj=125℃ Diode Erec Tj=150℃ VCC=300V IF=200A VGE=-15V ZthJC [K/W] E [mJ] 6 4 0.1 2 i: 1 2 3 4 ri[K/W]: 0.0270 0.1488 0.1440 0.1312 0.01 0.02 0.05 0.1 τi[s]: 0 0 4 8 12 RG [Ω] 16 20 Fig 9. Diode Switching Loss vs. RG ©2018 STARPOWER Semiconductor Ltd. 0.01 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 10/27/2018 7/9 Preliminary GD200HFX65C2S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2018 STARPOWER Semiconductor Ltd. 10/27/2018 8/9 Preliminary GD200HFX65C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2018 STARPOWER Semiconductor Ltd. 10/27/2018 9/9 Preliminary