GD400SGX170C2S

GD400SGX170C2S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD400SGX170C2S 1700V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd. 9/26/2018 1/9 Preliminary GD400SGX170C2S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1700 ±20 648 400 800 2380 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1700 400 800 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2018 STARPOWER Semiconductor Ltd. 9/26/2018 2/9 Preliminary GD400SGX170C2S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=400A,VGE=15V, Tj=25oC IC=400A,VGE=15V, Tj=125oC IC=400A,VGE=15V, Tj=150oC IC=16.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=25V,f=1MHz, VGE=0V VGE=-15V…+15V VCC=900V,IC=400A, RG=0.82Ω,VGE=±15V, Tj=25oC VCC=900V,IC=400A, RG=0.82Ω,VGE=±15V, Tj=125oC VCC=900V,IC=400A, RG=0.82Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=100V, VCEM≤1700V ©2018 STARPOWER Semiconductor Ltd. 9/26/2018 Typ. Max. 1.85 2.20 2.25 Unit V 2.35 5.6 6.2 6.8 V 5.0 mA 400 nA 1.88 48.2 Ω nF 1.17 nF 3.77 204 38 425 113 μC ns ns ns ns 97.9 mJ 84.0 mJ 208 50 528 184 ns ns ns ns 141 mJ 132 mJ 216 50 544 204 ns ns ns ns 161 mJ 137 mJ 1600 A 3/9 Preliminary GD400SGX170C2S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=400A,VGE=0V,Tj=25oC IF=400A,VGE=0V,Tj=125oC IF=400A,VGE=0V,Tj=150oC Min. Typ. 1.80 1.90 1.95 116 VR=900V,IF=400A, -di/dt=8800A/μs,VGE=-15V Tj=25oC VR=900V,IF=400A, -di/dt=8800A/μs,VGE=-15V Tj=125oC VR=900V,IF=400A, -di/dt=8800A/μs,VGE=-15V Tj=150oC Max. 2.25 Unit V μC 666 A 63.8 mJ 187 μC 662 A 114 mJ 209 μC 640 A 132 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Min. Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 Weight of Module ©2018 STARPOWER Semiconductor Ltd. Typ. 15 0.18 Max. 0.063 0.105 0.016 0.027 0.010 1.1 2.5 3.0 9/26/2018 4/9 K/W K/W 2.0 5.0 5.0 300 Unit nH mΩ N.m g Preliminary GD400SGX170C2S IGBT Module 800 800 VGE=15V 700 600 600 500 500 IC [A] IC [A] 700 400 VCE=20V 400 300 300 200 200 Tj=25℃ 100 Tj=25℃ Tj=125℃ Tj=150℃ 100 Tj=125℃ Tj=150℃ 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 4 5 Fig 1. IGBT Output Characteristics 400 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT Transfer Characteristics 400 500 450 6 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 350 300 350 250 VCC=900V RGon=0.82Ω VGE=±15V 200 250 E [mJ] E [mJ] 300 200 150 150 100 100 VCC=900V IC=400A VGE=±15V 50 50 0 0 0 100 200 300 400 500 600 700 800 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2018 STARPOWER Semiconductor Ltd. 0 1 2 3 4 5 6 7 8 9 10 RG [Ω] Fig 4. IGBT Switching Loss vs. RG 9/26/2018 5/9 Preliminary GD400SGX170C2S IGBT Module 900 0.1 IGBT Module 800 700 ZthJC [K/W] IC [A] 600 500 400 0.01 300 RGon=0.82Ω VGE=±15V Tj=150oC 200 100 i: 1 2 3 4 ri[K/W]: 0.0036 0.0209 0.0202 0.0183 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.001 0.001 300 600 900 1200 1500 1800 VCE [V] Fig 5. RBSOA 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 800 180 Tj=25℃ Tj=125℃ Tj=150℃ 700 Erec Tj=125℃ 160 Erec Tj=150℃ 140 600 120 E [mJ] 500 IF [A] 0.01 400 300 100 80 60 200 40 100 VCC=900V RGon=0.82Ω VGE=±15V 20 0 0 0.0 0.5 1.0 1.5 2.0 VF [V] 2.5 3.0 Fig 7. Diode Forward Characteristics ©2018 STARPOWER Semiconductor Ltd. 0 100 200 300 400 500 600 700 800 IF [A] Fig 8. Diode Switching Loss vs. IF 9/26/2018 6/9 Preliminary GD400SGX170C2S IGBT Module 140 1 Erec Tj=125℃ 130 Erec Tj=150℃ Diode 120 0.1 ZthJC [K/W] E [mJ] 110 100 90 0.01 80 VCC=900V IF=400A VGE=-15V 70 i: 1 2 3 4 ri[K/W]: 0.0062 0.0347 0.0336 0.0305 τi[s]: 0.01 0.02 0.05 0.1 60 0 1 2 3 4 5 6 RG [Ω] 7 8 9 Fig 9. Diode Switching Loss vs. RG ©2018 STARPOWER Semiconductor Ltd. 0.001 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 9/26/2018 7/9 Preliminary GD400SGX170C2S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2018 STARPOWER Semiconductor Ltd. 9/26/2018 8/9 Preliminary GD400SGX170C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2018 STARPOWER Semiconductor Ltd. 9/26/2018 9/9 Preliminary