DG10N12T2

DG10N12T2 IGBT Discretes DOSEMI IGBT DG10N12T2 Molding Type Discretes 1200V/10A IGBT with Anti-Parallel Diode General Description DOSEMI IGBT Power Discretes provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and electronic welders. TO-247 Features          Low VCE(sat) NPT IGBT technology Low switching loss Maximum junction temperature 150℃ 10μs short circuit capability Square RBSOA VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Tight parameter distribution Lead free package Equivalent Circuit Schematic Typical Applications     Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Electronic welders ©2012 Zhejiang Dos Technologies Ltd. 3/29/2012 1/5 Preliminary DG10N12T2 IGBT Discretes Absolute Maximum Ratings TC=25℃ unless otherwise noted Symbol VCES VGES IC ICM IF IFM PD Tjmax Tjop Tstg TS Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃ @ TC=100℃ Pulsed Collector Current tp=1ms Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Maximum Power Dissipation @ Tj=150℃ Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s DG10N12T2 1200 ±20 20 10 20 10 20 321 150 -40 to +150 -40 to +125 Units V V 260 ℃ A A A A W ℃ ℃ ℃ Electrical Characteristics of IGBT TC=25℃ unless otherwise noted Off Characteristics Symbol V(BR)CES ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Test Conditions Min. Typ. Max. 1200 Tj=25℃ Units V VCE=VCES,VGE=0V, Tj=25℃ VGE=VGES,VCE=0V, Tj=25℃ 25 μA 100 nA On Characteristics Symbol VGE(th) VCE(sat) Parameter Gate-Emitter Threshold Vol tage Collector to Emitter Saturation Voltage Test Conditions IC=500μA,VCE=VGE, Tj=25℃ IC=10A,VGE=15V, Tj=25℃ IC=10A,VGE=15V, Tj=125℃ ©2012 Zhejiang Dos Technologies Ltd. 3/29/2012 Min. Typ. Max. Units 5.0 5.9 6.5 V 2.05 2.50 V 2.40 2/5 Preliminary DG10N12T2 IGBT Discretes Switching Characteristics Symbol td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Coes Cres Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. Typ. 181 58 255 347 VCC=600V,IC=10A, RG=82Ω,VGE=±15 V, Tj=25℃ VCC=600V,IC=10A, RG=82Ω,VGE=±15 V, Tj=25℃ VCE=30V,f=1MHz, VGE=0V Gate Charge ISC SC Data RGint Internal Gate Resistance Units ns ns ns ns 1.79 mJ 0.73 mJ 185 59 266 480 ns ns ns ns 2.13 mJ 0.94 mJ 0.70 0.11 nF nF 0.05 nF 84 nC 90 A / Ω VCC=400V,IC=10A, VGE=15V tP≤10μs,VGE=15 V, Tj=125℃,VCC=900V, VCEM≤1200V QG Max. Electrical Characteristics of Diode TC=25℃ unless otherwise noted Symbol VF Qr IRM Erec Parameter Diode Forward Vol tage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions Tj=25℃ IF=10A,VGE=0V Tj=125℃ Tj=25℃ Tj=125℃ IF=10A, Tj=25℃ VR=600V, RG=82Ω, Tj=125℃ VGE=-15V Tj=25℃ Tj=125℃ Min. Typ. 1.85 2.00 0.4 1.4 8 9 0.27 0.45 Max. 2.30 Units V μC A mJ Thermal Characteristics Symbol RθJC RθJC RθJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2012 Zhejiang Dos Technologies Ltd. Typ. 3/29/2012 Max. 0.389 0.961 40 Units K/W K/W K/W 3/5 Preliminary DG10N12T2 IGBT Discretes Package Dimensions Dimensions in Millimeters ©2012 Zhejiang Dos Technologies Ltd. 3/29/2012 4/5 Preliminary DG10N12T2 IGBT Discretes Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you, For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2012 Zhejiang Dos Technologies Ltd. 3/29/2012 5/5 Preliminary