GD1000HFX170P2S

GD1000HFX170P2S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD1000HFX170P2S 1700V/1000A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind power. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Enlarged Diode for regenerative operation Isolated copper baseplate using DBC technology High power and thermal cycling capability Typical Applications    High Power Converter Wind Power Auxiliary Inverter Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 1/6/2019 1/10 Preliminary GD1000HFX170P2S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1700 ±20 1604 1000 2000 6.25 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1700 1000 2000 Unit V A A Value 175 -40 to +150 -40 to +150 4000 Unit o C o C o C V A A kW Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2019 STARPOWER Semiconductor Ltd. 1/6/2019 2/10 Preliminary GD1000HFX170P2S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=1000A,VGE=15V, Tj=25oC IC=1000A,VGE=15V, Tj=125oC IC=1000A,VGE=15V, Tj=150oC IC=40.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=900V,IC=1000A, RGon=1.2Ω,RGoff=1.8Ω VGE=±15V,Tj=25oC VCC=900V,IC=1000A, RGon=1.2Ω,RGoff=1.8Ω VGE=±15V,Tj=125oC VCC=900V,IC=1000A, RGon=1.2Ω,RGoff=1.8Ω VGE=±15V,Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=1300V, VCEM≤1700V ©2019 STARPOWER Semiconductor Ltd. 1/6/2019 Min. Typ. Max. 1.95 2.40 2.40 Unit V 2.50 5.6 6.2 6.8 V 5.0 mA 400 nA 2.3 108 Ω nF 2.63 nF 9.43 468 95 850 363 μC ns ns ns ns 292 mJ 230 mJ 480 120 1031 613 ns ns ns ns 439 mJ 325 mJ 480 120 1040 708 ns ns ns ns 447 mJ 347 mJ 4000 A 3/10 Preliminary GD1000HFX170P2S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=1000A,VGE=0V,Tj=25oC IF=1000A,VGE=0V,Tj=125oC IF=1000A,VGE=0V,Tj=150oC Min. VR=900V,IF=1000A, -di/dt=9200A/μs,VGE=-15V Tj=25oC VR=900V,IF=1000A, -di/dt=9200A/μs,VGE=-15V Tj=125oC VR=900V,IF=1000A, -di/dt=9200A/μs,VGE=-15V Tj=150oC Typ. 1.85 2.00 2.05 270 Max. 2.30 Unit V μC 1155 A 132 mJ 451 μC 1260 A 241 mJ 528 μC 1250 A 294 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions TC=100 oC,R100=493.3Ω R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] ©2019 STARPOWER Semiconductor Ltd. 1/6/2019 Min. Typ. 5.0 -5 Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K 4/10 Preliminary GD1000HFX170P2S IGBT Module Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M5 Weight of Module ©2019 STARPOWER Semiconductor Ltd. Min. Typ. 10 0.20 Max. 24.0 48.0 9.0 18.0 3.0 1.8 8.0 3.0 1/6/2019 5/10 K/kW K/kW 2.1 10 6.0 1210 Unit nH mΩ N.m g Preliminary GD1000HFX170P2S IGBT Module 2000 2000 VGE=15V VCE=20V 1200 1200 IC [A] 1600 IC [A] 1600 800 800 400 400 Tj=25℃ Tj=125℃ Tj=150℃ Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCE [V] 5 Fig 1. IGBT Output Characteristics 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 1,200 1,600 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ VCC=900V RGon=1.2Ω RGon=1.8Ω VGE=±15V 600 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 1,400 1,200 1,000 E [mJ] 900 E [mJ] 6 800 600 300 400 VCC=900V IC=1000A VGE=±15V 200 0 0 0 400 800 1200 1600 2000 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 2 4 6 8 RG [Ω] 10 Fig 4. IGBT Switching Loss vs. RG 1/6/2019 6/10 Preliminary 12 GD1000HFX170P2S IGBT Module 0.1 2400 Module IGBT 2000 0.01 ZthJC [K/W] IC [A] 1600 1200 0.001 800 RGon=1.2Ω VGE=±15V Tj=150oC 400 i: 1 2 3 4 ri[K/W]: 0.0014 0.0080 0.0077 0.0069 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.0001 0.001 300 600 900 1200 1500 1800 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 400 2000 Tj=25℃ Tj=125℃ Tj=150℃ Erec Tj=125℃ 350 Erec Tj=150℃ 1600 300 250 IF [A] E [mJ] 1200 800 200 150 100 VCC=900V RGon=1.2Ω VGE=-15V 400 50 0 0 0.0 0.5 1.0 1.5 2.0 VF [V] 2.5 3.0 Fig 7. Diode Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 400 800 1200 1600 2000 IF [A] Fig 8. Diode Switching Loss vs. IF 1/6/2019 7/10 Preliminary GD1000HFX170P2S IGBT Module 0.1 300 Erec Tj=125℃ Diode Erec Tj=150℃ 250 ZthJC [K/W] E [mJ] 200 150 0.01 100 VCC=900V IF=1000A VGE=-15V 50 i: 1 2 3 4 ri[K/W]: 0.0028 0.0158 0.0154 0.0140 τi[s]: 0.01 0.02 0.05 0.1 0 0 3 6 RG [Ω] 9 12 Fig 9. Diode Switching Loss vs. RG 0.001 0.001 0.01 0.1 t [s] 1 Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 10 150 Fig 11. NTC Temperature Characteristic ©2019 STARPOWER Semiconductor Ltd. 1/6/2019 8/10 Preliminary GD1000HFX170P2S IGBT Module Circuit Schematic 9/11 5 6 4 3 8 7 1 2 10/12 Package Dimensions Dimensions in Millimeters ©2019 STARPOWER Semiconductor Ltd. 1/6/2019 9/10 Preliminary GD1000HFX170P2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 1/6/2019 10/10 Preliminary