GD100MLX65L3S

GD100MLX65L3S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD100MLX65L3S 650V/100A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features       Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 oC Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Solar power UPS 3-level-application Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 1/10/2019 1/11 Preliminary GD100MLX65L3S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted T1-T4 IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 650 ±20 160 100 200 451 Unit V V Value 650 100 200 Unit V A A Value 650 100 200 Unit V A A Value 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A W D1-D4 Diode Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms D5,D6 Diode Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2019 STARPOWER Semiconductor Ltd. 1/10/2019 2/11 Preliminary GD100MLX65L3S IGBT Module T1-T4 IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=100A,VGE=15V, Tj=25oC IC=100A,VGE=15V, Tj=125oC IC=100A,VGE=15V, Tj=150oC IC=1.60mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=100A, RG=3.3Ω,VGE=±15V, Tj=25oC VCC=300V,IC=100A, RG=3.3Ω,VGE=±15V, Tj=125oC VCC=300V,IC=100A, RG=3.3Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2019 STARPOWER Semiconductor Ltd. 1/10/2019 Min. Typ. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 2.0 11.6 Ω nF 0.23 nF 0.69 40 20 192 40 μC ns ns ns ns 0.44 mJ 2.00 mJ 48 24 208 52 ns ns ns ns 0.68 mJ 2.68 mJ 52 24 216 60 ns ns ns ns 0.78 mJ 2.80 mJ 500 A 3/11 Preliminary GD100MLX65L3S IGBT Module D1-D4 Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=100A,VGE=0V,Tj=25oC IF=100A,VGE=0V,Tj=125oC IF=100A,VGE=0V,Tj=150oC Min. Typ. 1.55 1.50 1.45 VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=150oC Unit V 4.6 μC 99 A 1.32 mJ 8.6 μC 121 A 2.37 mJ 9.9 μC 127 A 2.64 mJ VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=25oC VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=125oC Max. 2.00 D5,D6 Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=100A,VGE=0V,Tj=25oC IF=100A,VGE=0V,Tj=125oC IF=100A,VGE=0V,Tj=150oC Min. Typ. 1.55 1.50 1.45 VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=150oC ©2019 STARPOWER Semiconductor Ltd. 1/10/2019 Unit V 4.6 μC 99 A 1.32 mJ 8.6 μC 121 A 2.37 mJ 9.9 μC 127 A 2.64 mJ VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=25oC VR=300V,IF=100A, -di/dt=3520A/μs,VGE=-15V Tj=125oC Max. 2.00 4/11 Preliminary GD100MLX65L3S IGBT Module NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100oC,R100=493.3Ω Typ. 5.0 -5 Max. 5 20.0 R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] Unit kΩ % mW 3375 K 3411 K 3433 K Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH F G Parameter Stray Inductance Module Lead Resistance,Terminal to Chip Junction-to-Case (per T1-T4 IGBT) Junction-to-Case (per D1-D4 Diode) Junction-to-Case (per D5,D6 Diode) Case-to-Sink (per T1-T4 IGBT) Case-to-Sink (per D1-D4 Diode) Case-to-Sink (per D5,D6 Diode) Case-to-Sink (per Module) Mounting Force Per Clamp Weight of Module ©2019 STARPOWER Semiconductor Ltd. Min. Typ. 15 2.00 0.302 0.538 0.425 0.283 0.506 0.400 0.037 40 1/10/2019 Max. 0.332 0.592 0.468 5/11 K/W K/W 80 39 Unit nH mΩ K/W g Preliminary GD100MLX65L3S IGBT Module 200 200 VGE=15V VCE=20V 120 120 IC [A] 160 IC [A] 160 80 80 40 40 Tj=25℃ Tj=25℃ Tj=125℃ Tj=150℃ Tj=125℃ Tj=150℃ 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCE [V] 5 Fig 1. T1-T4 IGBT Output Characteristics 7 8 9 VGE [V] 10 11 12 Fig 2. T1-T4 IGBT Transfer Characteristics 8 6 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 5 4 6 VCC=300V RG=3.3Ω VGE=±15V 3 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 7 5 E [mJ] E [mJ] 6 4 3 2 2 1 VCC=300V IC=100A VGE=±15V 1 0 0 0 40 80 120 IC [A] 160 200 Fig 3. T1-T4 IGBT Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 5 10 15 20 RG [Ω] 25 30 Fig 4. T1-T4 IGBT Switching Loss vs. RG 1/10/2019 6/11 Preliminary 35 GD100MLX65L3S IGBT Module 10 240 Module 200 IGBT 1 ZthJH [K/W] IC [A] 160 120 0.1 80 RG=3.3Ω VGE=±15V Tj=150oC 40 i: 1 2 3 4 ri[K/W]: 0.0228 0.0486 0.2110 0.3026 τi[s]: 0.0005 0.005 0.05 0.2 0 0 0.01 0.001 100 200 300 400 500 600 700 VCE [V] Fig 5. T1-T4 RBSOA 0.01 0.1 t [s] 1 10 Fig 6. T1-T4 IGBT Transient Thermal Impedance 5 200 Tj=25℃ Tj=125℃ Tj=150℃ 160 Erec,Tj=125℃ 4 Erec,Tj=150℃ 4 3 IF [A] E [mJ] 120 3 2 80 2 1 40 VCC=300V RG=3.3Ω VGE=-15V 1 0 0 0 0.4 0.8 1.2 VF [V] 1.6 2 Fig 7. D1-D4 Diode Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 40 80 120 IF [A] 160 200 Fig 8. D1-D4 Diode Switching Loss vs. IF 1/10/2019 7/11 Preliminary GD100MLX65L3S IGBT Module 10 4 Erec,Tj=125℃ 3 Erec,Tj=150℃ Diode 3 ZthJH [K/W] E [mJ] 1 2 2 0.1 1 VCC=300V IF=100A VGE=-15V 1 i: 1 2 3 4 ri[K/W]: 0.0618 0.1428 0.4235 0.4159 0.0005 0.005 0.05 0.2 τi[s]: 0 0 5 10 15 20 RG [Ω] 25 30 0.01 0.001 35 Fig 9. D1-D4 Diode Switching Loss vs. RG 0.01 0.1 t [s] 1 10 Fig 10. D1-D4 Diode Transient Thermal Impedance 4 200 Tj=25℃ Tj=125℃ Tj=150℃ 160 Erec,Tj=125℃ 3.5 Erec,Tj=150℃ 3 2.5 IF [A] E [mJ] 120 80 2 1.5 1 40 VCC=300V RG=3.3Ω VGE=-15V 0.5 0 0 0 0.4 0.8 1.2 VF [V] 1.6 2 Fig 11. D5,D6 Diode Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 40 80 120 IF [A] 160 200 Fig 12. D5,D6 Diode Switching Loss vs. IF 1/10/2019 8/11 Preliminary GD100MLX65L3S IGBT Module 10 3 Erec,Tj=125℃ Erec,Tj=150℃ 2.5 Diode 1 ZthJH [K/W] E [mJ] 2 1.5 0.1 1 VCC=300V IF=100A VGE=-15V 0.5 i: 1 2 3 4 ri[K/W]: 0.0488 0.1128 0.3347 0.3287 0.0005 0.005 0.05 0.2 τi[s]: 0 0 5 10 15 20 RG [Ω] 25 30 35 Fig 13. D5,D6 Diode Switching Loss vs. RG 0.01 0.001 0.01 0.1 t [s] 1 Fig 14. D5,D6 Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 150 Fig 15. NTC Temperature Characteristic ©2019 STARPOWER Semiconductor Ltd. 10 1/10/2019 9/11 Preliminary GD100MLX65L3S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters 1.4±0.5 12±0.35 15.5±0.5 0.64 48 44.8 41.6 38.4 51.5 32 28.8 25.6 22.4 19.2 16 12.8 9.6 G3 E3 U U U U U U U U G2 E2 T1 E1 T2 G1 5 3×8. φ2. φ4.5 16.4 22.7 56.7 32 28.8 25.6 16 12.8 6.4 3.2 42.5 48 53 62.8 3.2 N E4 ©2019 STARPOWER Semiconductor Ltd. G4 - 1/10/2019 - - - N N - N N 10/11 + N + + Preliminary + + GD100MLX65L3S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 1/10/2019 11/11 Preliminary